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Method for simulating single dendritic crystal growth numerical value in ternary alloy solidification process

A ternary alloy, numerical simulation technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problem of lack of ternary alloy solidification structure CA model and other problems

Active Publication Date: 2019-10-11
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a single dendrite growth numerical simulation method in the solidification process of ternary alloys, which solves the problem in the prior art that there is no CA model suitable for the solidification structure of ternary alloys

Method used

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  • Method for simulating single dendritic crystal growth numerical value in ternary alloy solidification process
  • Method for simulating single dendritic crystal growth numerical value in ternary alloy solidification process
  • Method for simulating single dendritic crystal growth numerical value in ternary alloy solidification process

Examples

Experimental program
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Effect test

Embodiment 1

[0105] Taking Ti-6Al-4V ternary alloy as an example, the method of the present invention is simulated, and the used alloy thermophysical parameters are as shown in table 1 during simulation:

[0106] Table 1

[0107]

[0108] Table 1 shows the thermal physical parameters used in the calculation of Ti-6Al-4V alloy simulation.

[0109] Simulation results such as image 3 , Figure 4 , Figure 5 , Image 6 It can be seen from the figure that when the preferred growth direction is 0°, the secondary dendrites on the primary dendrite arms are underdeveloped, and there are only a small number of fine secondary dendrites, while when the preferred growth direction is 30°, the primary dendrites are not developed. Coarse secondary dendrites grow on the dendrite arms. And the diffusion layer of Al element on the interface is larger than the diffusion layer of V element on the interface.

Embodiment 2

[0111] Taking Fe-0.8%C-0.3%Si ternary alloy as an example, the method of the present invention is simulated, and the used alloy thermophysical parameters during simulation are as shown in table 2:

[0112] Table 2

[0113]

[0114] Table 2 shows the thermal physical parameters used in the calculation of Fe-0.8%C-0.3%Si alloy simulation.

[0115] Simulation results such as Figure 7 , Figure 8 , Figure 9 , Figure 10 It can be seen from the figure that when the anisotropy is 0, the equiaxed crystal starts from the original grain, and the primary dendrites grow uniformly around, and there are many secondary dendrites on the dendrite arms, and the overall dendrites The crystal morphology is snowflake-like. When the anisotropy is 0.2, the primary dendrites do not grow scattered around, but grow according to the crystal structure, and well-developed secondary and tertiary dendrites can be observed on the primary dendrite arms.

Embodiment 3

[0117] Taking Fe-0.6%C-0.4%Si ternary alloy as an example, the method of the present invention is simulated, and the thermal physical parameters of the alloy used during simulation are as shown in Table 3:

[0118] table 3

[0119]

[0120] Table 3 shows the thermophysical parameters used in the calculation of the Fe–0.6%C–0.4%Si alloy simulation.

[0121] Simulation results such as Figure 11 , Figure 12 , Figure 13 , Figure 14 It can be seen from the figure that when the degree of subcooling is 5K, the primary dendrite arm is short, and the number of secondary dendrites on the primary dendrite arm is small, and the secondary dendrite is underdeveloped. When the subcooling degree is 8K, the primary dendrites increase obviously, and there are well-developed secondary dendrites on the primary dendrite arms.

[0122] It can be seen from the above three examples that the present invention can successfully simulate the growth morphology, solute distribution state, cryst...

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Abstract

The invention discloses a method for simulating a single dendritic crystal growth numerical value in a ternary alloy solidification process. The method comprises the following specific steps: simplifying solidification conditions, establishing a dendritic crystal growth model and a solute redistribution and diffusion model, writing a computer program based on the established models, importing simulation software for calculation, and finally obtaining a simulation result of dendritic crystal growth in the solidification process. According to the invention, the growth morphology of dendrites andthe distribution state of solute components in the solidification process of the ternary alloy can be simulated, and the influence of factors such as supercooling degree, disturbance amplitude, anisotropic strength and the like on the solidification process can also be simulated, thereby playing a guiding role in practical engineering application.

Description

technical field [0001] The invention belongs to the technical field of numerical simulation technology of metal material welding process, and in particular relates to a single dendrite growth numerical simulation method in the solidification process of ternary alloys. Background technique [0002] Welding pool has the characteristics of high temperature, transient and dynamic, so it is difficult to study the solidification process of transiently changing molten pool by traditional experimental methods. With the rapid development of computer technology, numerical simulation, as an emerging technology to study the solidification process of weld pool, can accurately and quantify various phenomena and evolution laws in the process of alloy solidification, making up for the shortcomings of traditional experimental methods. [0003] Numerical simulation methods of weld pool solidification process include deterministic method, Monte Carlo method (MC), phase field method (PF), cellu...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 张敏郭宇飞黄超张立胜王刚
Owner XIAN UNIV OF TECH
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