White LED epitaxial structure and manufacturing method thereof
A technology of light-emitting diodes and epitaxial structures, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of changing the color of phosphor white LEDs, prolonging the response time and impact of white LED chips, and achieving short response times. The effect of long life and wide application range
Pending Publication Date: 2019-10-18
FOSHAN NATIONSTAR SEMICON
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Problems solved by technology
However, the use of phosphor prolongs the response time of white LED chips to a certain extent, which affects some special applications.
In addition, with the passage of time, phosphors are prone to stability problems and cause changes in the color of white LEDs, resulting in the actual use of phosphor-excited white LED chips far shorter than the theoretical life of GaN machine light-emitting diodes.
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Embodiment 1
[0059] A method for manufacturing an epitaxial structure of a white light emitting diode, comprising the following steps:
[0060] 1. Treat the sapphire substrate for 10 minutes at 1050°C and the pressure of the reaction chamber in a hydrogen atmosphere of 1000mbar;
[0061] 2. After completing step (1), reduce the temperature to 550° C., maintain the pressure in the reaction chamber at 600 mbar, and grow a GaN layer with a thickness of 40 nm on the sapphire substrate;
[0062] Raise the temperature to 1050°C, maintain the reaction chamber pressure at 300mbar, and grow a 3μm undoped GaN layer;
[0063] Under the same conditions, the Si source was introduced to grow an N-type GaN layer with a thickness of 3nm, and the Si doping concentration was 1E19;
[0064] Lower the temperature to 850°C, and grow the InGaN / GaN stress release layer for 6 cycles;
[0065] 3. After completing step (2), adjust the temperature to 750°C, maintain the pressure in the reaction chamber at 300mbar,...
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The invention discloses a white LED epitaxial structure and a manufacturing method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type GaN layer, a stress release layer,an active layer, a barrier layer and a P-type GaN layer which are sequentially arranged; the active layer comprises a plurality of periodic quantum well structures; each quantum well structure comprises a plurality of blue light quantum well layers, a plurality of yellow light quantum well layers and a GaN quantum barrier layer; and the epitaxial structure excites yellow light and blue light undera preset driving current. According to the epitaxial structure, white light can be emitted, and fluorescent powder does not need to be added. In addition, an LED chip manufactured by the epitaxial structure has the advantages of short response time and long service life.
Description
technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to an epitaxial structure of a white light emitting diode and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor device that uses carrier recombination to release energy to form light. LED chips have low power consumption, pure chromaticity, long life, small size, fast response time, energy saving and environmental protection, etc. Many advantages. [0003] At present, white light-emitting diodes mainly use blue LED chips and yellow phosphors, and white light is obtained by complementary colors of blue light and yellow light, or use blue LED chips with red and green phosphors, and the blue light emitted by the chip and the red light emitted by the phosphors Mix with green light to get white light. However, the use of phosphor prolongs the response time of white LED chips to a certain exten...
Claims
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IPC IPC(8): H01L33/06H01L33/12H01L33/14H01L33/32H01L33/00
CPCH01L33/06H01L33/12H01L33/14H01L33/32H01L33/0075Y02B20/00
Inventor 农明涛庄家铭贺卫群祝邦瑞郭嘉杰
Owner FOSHAN NATIONSTAR SEMICON