Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Perovskite solar cell with Bi2O2S modified SnO2 electron transfer layer and preparation method

An electron transport layer, solar cell technology, applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problem of tin dioxide material deviating from the ideal stoichiometric ratio, etc., to reduce recombination, improve performance, and improve charge transfer. Effect

Active Publication Date: 2019-10-18
SOUTH CHINA UNIV OF TECH
View PDF4 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because of its two valence states and four valence states, usually the prepared tin dioxide material deviates from its ideal stoichiometric ratio

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Perovskite solar cell with Bi2O2S modified SnO2 electron transfer layer and preparation method
  • Perovskite solar cell with Bi2O2S modified SnO2 electron transfer layer and preparation method
  • Perovskite solar cell with Bi2O2S modified SnO2 electron transfer layer and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A Bi of this embodiment 2 o 2 S-modified SnO 2 The perovskite solar cell device structure of the electron transport layer is: ITO / SnO 2 : Bi 2 o 2 S / MAPbI 3 / Spiro-OMeTAD / MoO x / Ag. The specific preparation process is as follows:

[0031] (1) The ITO substrate was ultrasonically cleaned with detergent, deionized water, acetone, absolute ethanol, and isopropanol in sequence for 20 minutes, and then dried in a vacuum oven at 80°C. The surface of the cleaned and dried ITO substrate is subjected to plasma surface treatment for 10 minutes. This treatment method utilizes the strong oxidizing properties of ozone generated under microwaves to clean the residual organic matter on the ITO surface, while improving the work function of the ITO surface.

[0032] (2) Spin-coat SnO on the ITO surface treated in step (1) 2 with Bi 2 o 2 S mixed solution, the rotation speed is 3500rpm, the time is 40s; followed by annealing treatment, the temperature is 180°C, the time is 1 h...

Embodiment 2

[0042] A Bi of this embodiment 2 o 2 S-modified SnO 2 The perovskite solar cell device structure of the electron transport layer is: ITO / SnO 2 : Bi 2 o 2 S / MAPbI 3 / Spiro-OMeTAD / MoO x / Ag. The specific preparation process is as follows:

[0043] (1) The ITO substrate was ultrasonically cleaned with detergent, deionized water, acetone, absolute ethanol, and isopropanol in sequence for 20 minutes, and then dried in a vacuum oven at 80°C. The surface of the cleaned and dried ITO substrate is subjected to plasma surface treatment for 10 minutes. This treatment method utilizes the strong oxidizing properties of ozone generated under microwaves to clean the residual organic matter on the ITO surface, while improving the work function of the ITO surface.

[0044] (2) Spin-coat SnO on the ITO surface treated in step (1) 2 with Bi 2 o 2 S mixed solution, the rotation speed is 3500rpm, the time is 50s; followed by annealing treatment, the temperature is 180°C, the time is 1 h...

Embodiment 3

[0048] A Bi of this embodiment 2 o 2 S-modified SnO 2 The perovskite solar cell device structure of the electron transport layer is: ITO / SnO 2 : Bi 2 o 2 S / MAPbI 3 / Spiro-OMeTAD / MoO x / Ag. The specific preparation process is as follows:

[0049] (1) The ITO substrate was ultrasonically cleaned with detergent, deionized water, acetone, absolute ethanol, and isopropanol in sequence for 20 minutes, and then dried in a vacuum oven at 80°C. The surface of the cleaned and dried ITO substrate is subjected to plasma surface treatment for 10 minutes. This treatment method utilizes the strong oxidizing properties of ozone generated under microwaves to clean the residual organic matter on the ITO surface, while improving the work function of the ITO surface.

[0050] (2) Spin-coat SnO on the ITO surface treated in step (1) 2 with Bi 2 o 2 S mixed solution, the rotation speed is 3500rpm, the time is 45s; followed by annealing treatment, the temperature is 180°C, the time is 1 h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of perovskite solar cells, and discloses a perovskite solar cell with a Bi2O2S modified SnO2 electron transfer layer and a preparation method. The perovskite solar cell comprises a cathode base, the electron transfer layer, a perovskite light absorption layer, a hole transfer layer and an anode layer, wherein the electron transfer layer is a Bi2O2S modified SnO2thin film; and the perovskite light absorption layer is MAPbI3. The Bi2O2S material modified SnO2 electron transfer layer with high electric conductivity and high charge separation capacity is adopted; firstly, Bi2O2S has relatively high electric conductivity, so that the charge transfer of the electron transfer layer can be promoted effectively. Secondly, the oxygen vacancy of SnO2 is filled effectively through Bi2O2S modification, so that the composition of charges is reduced. The morphology of the perovskite layer further can be influenced through the modification of Bi2O2S, and finally, the performance of the perovskite solar cell is promoted.

Description

Technical field [0001] The invention belongs to the field of perovskite solar cells, and specifically relates to a Bi 2 O 2 S modified SnO 2 Perovskite solar cell with electron transport layer and preparation method. Background technique [0002] Perovskite solar cells have the advantages of simple structure, high energy conversion efficiency, and easy preparation by solution method. In just nine years of development, the energy conversion efficiency has increased from 3.8% to 23.7%, entering the ranks of high energy conversion efficiency solar cells. [0003] The working principle of perovskite solar cells is: (1) light shines on the active layer through the transparent ITO electrode, and the perovskite light-absorbing layer absorbs photons to generate excitons; the excitons diffuse to the interface; (2) holes pass through the holes Transport layer transmission, electrons are transported through the electron transport layer; (3) electrons reach the cathode and holes rea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K30/151H10K2102/101H10K2102/00Y02E10/549
Inventor 於黄忠陈金雲黄承稳巫祖萍侯春利王键鸣
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com