Multi-mode eight-frequency high-efficiency high-gain power amplifier

Abstract

The invention discloses a multi-mode eight-frequency high-efficiency high-gain power amplifier which comprises a multi-mode eight-frequency input matching network, a three-stack self-bias power amplification network and a multi-mode eight-frequency output matching network which are connected in sequence. The grid power supply bias network and the drain power supply bias network are respectively connected with the multimode eight-frequency input matching network and the multimode eight-frequency output matching network. The power amplifier has the beneficial effects that a three-stack transistor structure based on a self-bias structure is adopted, and a multimode LC matching network is combined, so that the power amplifier has multimode characteristics of high efficiency, high gain and highpower output capability at eight frequency points.

Description

technical field [0001] The invention relates to the field of a field effect transistor radio frequency power amplifier and an integrated circuit, in particular to a multi-mode, eight-frequency, high-efficiency and high-gain power amplifier for application to a radio frequency front-end transmitting module of a multi-frequency and multi-mode communication system. Background technique [0002] With the development of modern military and civilian communication technologies, RF front-end transmitters are also developing in the direction of multi-frequency, multi-mode, high efficiency, high gain, and high power output. Therefore, the market urgently needs multi-frequency multi-mode, high-efficiency, high-gain, high-power power amplifiers. However, in the design of traditional high-efficiency power amplifiers, there have always been some design problems, mainly reflected in the difficulty of multi-frequency and multi-mode mutual constraints when compatible with high-efficiency ind...

AI Technical Summary

Problems solved by technology

However, in the design of traditional high-efficiency power amplifiers, there have always been some design problems, mainly reflected in the difficulty of multi-frequency and multi-mode when compatible with high-efficiency indicators and mutual constraints

In order to ensure the high-efficiency and high-gain operation of the amplifier, the transistor must achieve a good and accurate compromise between the best efficiency and gain matching in the multi-frequency mode, but the realization of the multi-frequency power amplifier has always been the technical bottleneck

[0003] Common high-efficiency, high-gain multi-frequency power amplifier circuit solutions include multiple single-frequency point power amplifiers to form a load amplification system, and each power amplifier achieves the best circuit design at its own frequency point, but this type of amplification system is bulky , the cost is high; using ultra-wideband power amplifiers to cover multiple operating frequency points, but affected by the gain-bandwidth product, the output power, gain and efficiency of ultra-wideband amplifiers are often lower than narrowband circuits; dual-band or triple-band circuit design structure, this circuit can achieve the best output power, gain and efficiency matching at the same time at dual or triple frequency points, but due to the high complexity of multi-frequency circuits, this circuit structure often cannot be applied to more than three frequency points in the system

In addition, the existing high-efficiency FET power amplifiers are often implemented based on a single common-source transistor, which is limited by a single transistor, and the power output capability and power gain capability are relatively low

Images