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Process for producing sapphire crystals by Kyropoulos method

A technology of sapphire crystal and production process, which is applied in the direction of crystal growth, seed crystal remains in the molten liquid and single crystal growth during the growth period, which can solve the problems of solute tailing, crystal utilization rate decrease, interface easy to flip, etc., to achieve The effect of reducing the probability of cracking

Active Publication Date: 2019-10-22
SUQIAN COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the innovation of the Kyropoulos method, the weight of crystals has gradually increased to more than 160kg at present, the diameter of the crucible has increased, the radial gradient at the bottom of the crucible has decreased, and the interface is prone to overturning, forming a severe cellular interface. When the interface is overturned, it is easy to Defects such as component supercooling, solute trails, bubbles, and melt inclusions occur, especially when there is a high pulling speed during the crystal growth process, the bubbles in the center of the bottom of the sapphire crystal are in the form of flakes or steamed buns in the center of the bottom, as follows figure 1 As shown, due to the presence of steamed-tou-like air bubbles at the bottom of the crystal, the utilization rate of the crystal is severely reduced

Method used

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  • Process for producing sapphire crystals by Kyropoulos method
  • Process for producing sapphire crystals by Kyropoulos method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A production process of Kyropoulos sapphire crystals is characterized in that it comprises the following steps:

[0034] 1) Clean the furnace and insulation layer with alcohol and / or dust-free cloth and / or copper wire brush and / or industrial vacuum cleaner;

[0035] 2) Put the 5N alumina raw material into the crucible in the clean room, and wrap it with a clean plastic cloth for later use;

[0036] 3) Put the crucible full of raw materials into the furnace, install the A-direction seed crystal on the seed crystal chuck, and screw it to the seed crystal rod, complete the seed crystal rod centering, close the furnace, vacuum and check for leaks ;

[0037] 4) According to different thermal fields and raw materials, determine the chemical process and increase the temperature;

[0038] 5) After the raw materials are melted, keep the melt constant for 3 hours under high temperature conditions;

[0039] 6) Bottom the seed crystal, judge the melt according to the liquid flow speed, the t...

Embodiment 2

[0050] A production process of Kyropoulos sapphire crystals is characterized in that it comprises the following steps:

[0051] 1) Clean the furnace and insulation layer with alcohol and / or dust-free cloth and / or copper wire brush and / or industrial vacuum cleaner;

[0052] 2) Put the 5N alumina raw material into the crucible in the clean room, and wrap it with a clean plastic cloth for later use;

[0053] 3) Put the crucible full of raw materials into the furnace, install the A-direction seed crystal on the seed crystal chuck, and screw it to the seed crystal rod, complete the seed crystal rod centering, close the furnace, vacuum and check for leaks ;

[0054] 4) According to different thermal fields and raw materials, determine the chemical process and increase the temperature;

[0055] 5) After the raw materials are melted, keep the melt constant for 4 hours under high temperature conditions;

[0056] 6) Bottom the seed crystal, judge the melt according to the liquid flow speed, the t...

Embodiment 3

[0067] A production process of Kyropoulos sapphire crystals is characterized in that it comprises the following steps:

[0068] 1) Clean the furnace and insulation layer with alcohol and / or dust-free cloth and / or copper wire brush and / or industrial vacuum cleaner;

[0069] 2) Put the 5N alumina raw material into the crucible in the clean room, and wrap it with a clean plastic cloth for later use;

[0070] 3) Put the crucible full of raw materials into the furnace, install the A-direction seed crystal on the seed crystal chuck, and screw it to the seed crystal rod, complete the seed crystal rod centering, close the furnace, vacuum and check for leaks ;

[0071] 4) According to different thermal fields and raw materials, determine the chemical process and increase the temperature;

[0072] 5) After the raw materials are melted, keep the melt constant for 5 hours under high temperature conditions;

[0073] 6) Bottom the seed crystal, judge the melt according to the liquid flow speed, the t...

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Abstract

The invention relates to a process for producing sapphire crystals with a Kyropoulos method. The process provided by the invention has the benefits that steamed bun-like bubbles at the bottom center are furthest relieved and even a complete bubble-free crystal can grow by mainly utilizing a specific 'sitting pot' finishing and supplementary temperature stripping long crystal process; particularly,bottom bulges are circular water droplet-shaped crystals or water droplet-shaped crystals of a circular array and can effectively reduce the cracking probability after the crystals fall off, so thatthe growth of the complete bubble-free crystal is realized.

Description

Technical field [0001] The invention relates to a new method and a new process suitable for the end-growing growth of sapphire single crystals by the Kyrgyzstan method, and in particular to a new end-growing method for sapphire crystals of 160kg and above, and is specifically applied to the technical field of sapphire single crystal growth. Background technique [0002] Sapphire has the characteristics of high melting point (2045℃), good thermal conductivity, high hardness, good electrical insulation, resistance to strong acid and alkali corrosion, and wide light transmission band. It is widely used in civilian equipment such as mobile phone screens and mirrors, and is used in missiles. Military enterprises such as fairings and helicopter shafts. There are many ways to grow sapphire crystals, and the most commonly used method currently used by merchants is the Kyrgyzstan method. The Kyrgyzstan method is abbreviated as KY method. Its principle is to first heat the raw materials t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20C30B17/00
CPCC30B29/20C30B17/00
Inventor 刘方方施允洋陈业高房开拓
Owner SUQIAN COLLEGE