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Flexile inner-connected CIGS solar cell and preparation method thereof

A solar cell and flexible technology, applied in the field of solar cells, can solve the problems of small reduction in cell manufacturing cost, very high component efficiency loss, and complicated welding process, so as to improve component efficiency, suppress the generation of low-level defect states, and avoid dead The effect of a large area

Pending Publication Date: 2019-10-22
绵阳皓华光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the dead zone area is large, accounting for 6-8% of the entire battery area, and the component efficiency loss is very high; at the same time, the screen printing and Busbar welding process is complicated, the process repeatability is poor, and a large amount of silver paste is consumed, so the battery Manufacturing cost reduction space is very small

Method used

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  • Flexile inner-connected CIGS solar cell and preparation method thereof
  • Flexile inner-connected CIGS solar cell and preparation method thereof
  • Flexile inner-connected CIGS solar cell and preparation method thereof

Examples

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Effect test

Embodiment 1

[0052] Step 1. Prepare a 1500nm thick aluminum nitride insulating layer on a flexible stainless steel substrate with a thickness of 30um. The preparation method is the reactive magnetron sputtering method. The sputtering target material used is aluminum, and the N 2 and Ar mixed gas, the background vacuum degree during sputtering is less than or equal to 5.0×10 ﹣3 Pa, the power density is 0.1W / cm 2 , working pressure is 0.1Pa, stainless steel substrate temperature is 20℃, sputtering time is 5min, N 2 The flow rate is 10-30sccm, and the Ar flow rate is 90sccm;

[0053] Step 2: Prepare a chromium barrier layer with a thickness of 100nm on the insulating layer by DC sputtering. The target material used in the preparation is a chromium target. Ar is introduced during the preparation process. The background vacuum degree during sputtering is less than or equal to 5.0× 10 ﹣3 Pa, sputtering power 3kW, working pressure 0.5Pa, stainless steel substrate temperature 20°C, sputtering ...

Embodiment 2

[0062] Step 1. Prepare an insulating layer with a thickness of 1800nm ​​on a flexible stainless steel substrate with a thickness of 40um. The preparation method is the reactive magnetron sputtering method. The sputtering target material used is aluminum, and N is introduced during sputtering. 2 and Ar mixed gas, the background vacuum degree during sputtering is less than or equal to 5.0×10 ﹣3 Pa, the power density is 10W / cm 2 , working pressure is 8Pa, stainless steel substrate temperature is 100℃, sputtering time is 10min, N 2 The flow rate is 20sccm, and the Ar flow rate is 100sccm;

[0063] Step 2: Prepare a chromium barrier layer with a thickness of 100nm by DC sputtering on the aluminum nitride insulating layer. The target material used in the preparation is a chromium target. Ar is introduced during the preparation process. The background vacuum during sputtering is less than Equal to 5.0×10 ﹣3 Pa, sputtering power 5kW, working pressure 0.5-0.8Pa, stainless steel subs...

Embodiment 3

[0072]Step 1. Prepare a 2000nm thick aluminum nitride insulating layer on a flexible stainless steel substrate with a thickness of 50um. The preparation method is the reactive magnetron sputtering method. The sputtering target material used is aluminum, and the N 2 and Ar mixed gas, the background vacuum degree during sputtering is less than or equal to 5.0×10 ﹣3 Pa, the power density is 20W / cm 2 , the working pressure is 10Pa, the stainless steel substrate temperature is 400°C, the sputtering time is 20min, the N2 flow rate is 30sccm, and the Ar flow rate is 150sccm;

[0073] Step 2: Prepare a chromium barrier layer with a thickness of 100nm by DC sputtering on the aluminum nitride insulating layer. The target material used in the preparation is a chromium target. Ar is introduced during the preparation process. The background vacuum during sputtering is less than Equal to 5.0×10 ﹣3 Pa, sputtering power 6kW, working pressure 0.8Pa, stainless steel substrate temperature 400...

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Abstract

The invention discloses a flexible inner-connected CIGS solar cell and a preparation method thereof. The flexible inner-connected CIGS solar cell comprises a flexible substrate, a back protection layer, an insulating layer, a barrier layer, a back electrode layer, a CIGS absorption layer, a buffer layer, a window layer, a front electrode layer and multiple groups of scribing lines, wherein the back protection layer is deposited on the lower surface of the flexible substrate; the insulating layer is prepared on the flexible substrate by adopting a magnetron sputtering method; the barrier layeris prepared on the insulating layer by adopting a sputtering method; the back electrode layer is prepared on the barrier layer by a sputtering method; the CIGS absorption layer is prepared on the backelectrode layer by a three-step co-evaporation and sputtering selenization method; the buffer layer is prepared on the CIGS absorption layer by adopting a chemical water bath process; the window layer is prepared on the buffer layer by adopting a sputtering method; the front electrode layer is prepared on the window layer by adopting a sputtering method; and each group of scribing lines includesa scribing line P1, a scribing line P2 and a scribing line P3, each group of scribing lines perform scribing on different functional film layers, and the series connection inside the cells is realized. According to the invention, the effective power generation area and the efficiency of the cell are improved, the product quality is high, the cost is low, and the commercial scale production is facilitated.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and more specifically, the invention relates to a flexible inline CIGS solar cell and a preparation method thereof. Background technique [0002] Since CIGS solar cells need to be selenized at a high temperature above 500°C, their substrates need to be resistant to high temperatures. The flexibility and high temperature resistance of stainless steel foil are very suitable for the preparation of flexible CIGS solar cells, and have been obtained in the field of commercial manufacturing of flexible CIGS cells. generally adopted. At present, the CIGS solar cell sub-cell integration and interconnection technology on flexible substrates generally adopts the external connection method in the industry. The external connection method needs to use screen printing or other techniques to prepare metal grid lines on the battery sheet to collect and lead the current to the Busbar, and then weld the positi...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0392H01L31/042H01L31/18
CPCH01L31/02167H01L31/03928H01L31/042H01L31/18Y02E10/541Y02P70/50
Inventor 陈培专陈亚栋李劼魏昌华高翔
Owner 绵阳皓华光电科技有限公司
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