Controllable preparation device and method for large-area thin film

Abstract

The invention belongs to the technical field of thin film material preparation and relates to a chemical deposition device, in particular to a controllable preparation device and method for a large-area thin film. According to the controllable preparation device and method, an ultraviolet generating device is placed into a tube furnace, namely a quartz tube, the characteristics of ultraviolet light with wave length of 10 - 400 nm that the ultraviolet light has extremely high energy and can crack a compound at a certain wavelength are utilized, a hydrocarbon is cracked through the ultraviolet light, so that the growth temperature of the thin film is greatly reduced, and the thin film can be prepared at a low temperature and even at normal temperature; and meanwhile, the ultraviolet generating device can move in any direction, so that a thin film with a specific shape can be prepared, then the energy source and the preparation cost are greatly saved, and the efficiency is improved.

Description

technical field [0001] This field belongs to the technical field of thin film material preparation; specifically, it is a controllable preparation device and method for large-area thin film. Background technique [0002] Two-dimensional materials refer to layered materials with a thickness of less than a few atoms. At present, two-dimensional materials are a hot spot in scientific research. They have very superior properties, such as electrical and thermal conductivity, and have great prospects in semiconductors and other fields. [0003] The chemical vapor deposition (CVD) method is a common method for preparing two-dimensional material thin films. This method generally uses metal as a substrate, and the precursor is catalytically cracked on the metal substrate, and deposited to form a thin film. For example, the CVD method prepares graphene by heating the substrate to thousands of degrees, and then passing through hydrocarbons, which decompose and deposit on the substrate ...

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Problems solved by technology

Because the chemical vapor deposition method usually uses high temperature to promote the decomposition and deposition of gases such as hydrocarbons to form a film on the substrate, which will waste huge energy

In order to save energy, when two-dimensional material films such as graphene or h-BN are prepared by chemical vapor deposition, it can be carried out at a lower temperature such as 200°C, but this will still consume a lot of energy, and the effective conversion rate of gas Low, that is, high temperature or catalytic substrate can only crack a small proportion of hydrocarbons, which will still cause waste of energy

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