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A method for manufacturing a high-brightness composite substrate

A composite substrate and manufacturing method technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effects of reducing light refraction, improving brightness, and improving brightness

Active Publication Date: 2020-05-05
黄山博蓝特半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] With the high requirements of the consumer market, the current traditional micro-nano patterned sapphire substrate is difficult to meet the requirements, so we must start from the material and structure, and adopt a new sapphire substrate preparation method to meet people's requirements

Method used

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  • A method for manufacturing a high-brightness composite substrate
  • A method for manufacturing a high-brightness composite substrate
  • A method for manufacturing a high-brightness composite substrate

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Embodiment

[0032] Embodiment, a kind of manufacturing method of high-brightness composite substrate, technological process is as follows figure 1 Shown, concrete preparation method comprises the following steps:

[0033] (1) Firstly, a sapphire flat plate 1 with a flat surface is provided. The flat plate is polished on both sides, and the back side is transparent. The sapphire flat sheet 1 was first scrubbed with acetone for 5-10 minutes, and then washed in concentrated H at 90°C. 2 SO 4 with H 2 o 2 Wash in a mixed solution with a volume ratio of 3:1 or 5:2 for 10 to 15 minutes, then wash with 80°C deionized water for 8 to 10 minutes, and finally wash with 25°C deionized water for 5 to 10 minutes, then high-speed Shake dry for 3-10 minutes.

[0034] (2) Place the cleaned sapphire flat sheet 1 in the cavity of the electron gun evaporation machine, use accelerated electrons to bombard the metal material used for coating, and convert the kinetic energy of the electrons into heat energ...

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Abstract

The invention discloses a manufacturing method of a high-brightness composite substrate. The method mainly comprises the following steps: depositing a layer of metal coating on a sapphire flat sheet;coating a positive photoresist coating on the metal coating, and carrying out exposing and developing to selectively remove unnecessary parts to form a group of positive photoresist columns on the metal coating; performing ICP etching with the positive photoresist columns as a barrier layer and forming a group of mutually-independent metal bosses on the sapphire flat sheet; depositing a layer of SiO2 coating on one surface, having the metal bosses, of the sapphire flat sheet through a chemical vapor deposition method; coating a negative photoresist coating on the SiO2 coating, and carrying outexposure and development to selectively remove unnecessary parts so as to form a group of negative photoresist columns on the SiO2 coating; and carrying out ICP etching with the negative photoresistcolumns and the SiO2 coating as a barrier layer to obtain the high-brightness composite substrate. The composite substrate is formed through the sapphire, the metal coating and the SiO2, and the brightness of an LED chip can be greatly improved.

Description

technical field [0001] The invention relates to the field of manufacturing LED substrates, in particular to a method for manufacturing a high-brightness composite substrate. Background technique [0002] As we all know, PSS (patterned sapphire substrate) is in the upstream process of LED display industry and plays a vital role. It can effectively reduce the dislocation density of GaN epitaxial materials, thereby reducing the non-radiative recombination of the active region and reducing the Reverse leakage current, improve LED life and many other advantages. At present, the micro-nano patterned sapphire substrate technology is widely used. By making periodic conical patterns on the surface of the epitaxial sapphire substrate, the characteristics of the high potential energy of the conical inclined surface on the sapphire patterned substrate are used to control the growth of epitaxial growth parameters. Higher quality GaN is produced. However, with the rapid development of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/48H01L33/58
CPCH01L27/156H01L33/48H01L33/58H01L2933/0058
Inventor 徐良李昌勋史伟言刘建哲夏建白张磊彭艳亮
Owner 黄山博蓝特半导体科技有限公司
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