Dual-frequency thermal plasma jet generating device

Abstract

The invention discloses a dual-frequency thermal plasma jet generating device, which comprises a device body, a radio frequency coil, a high temperature-resistant insulating baffle, a radio frequencypower source, a jet source cathode, a jet source anode and an arc power source, wherein a plasma reaction zone is formed in the device body; the radio frequency power source is electrically connectedto the radio frequency coil; the radio frequency coil is used for ionizing a discharge gas; the high temperature-resistant insulating baffle is arranged between the radio frequency coil and the plasmareaction zone; the arc power source is electrically connected to the jet source cathode and the jet source anode respectively; the jet source cathode and the jet source anode are disposed in the plasma reaction zone; an arc discharge zone is formed between the jet source cathode and the jet source anode; and when pre-ionized plasma passes through the arc discharge zone, thermal arc plasma is generated. The device adopts a dual-frequency excitation mode, realizes multi-field coupling control through combined adjustment of the radio frequency power source and the arc power source, and contributes to the separation and control of the plasma parameters, which can meet more demands of users.

Description

technical field [0001] The invention relates to the technical field of thermal plasma jets, in particular to a dual-frequency thermal plasma jet generating device. Background technique [0002] Crystallization of amorphous silicon thin films on glass substrates is a key process technology for preparing polysilicon thin film transistors. Excimer laser annealing (ELA) has been widely used in the display applications of liquid crystal displays and organic light-emitting diode displays. However, due to the limitation of laser output power, the application of ELA technology in large-area processing makes the processing cost high, and the thermal plasma jet preparation process can well overcome this series of bottleneck problems. [0003] Corresponding thermal plasma jet generating devices have appeared on the market, but the existing thermal plasma jet generating devices only have a single radio frequency power supply, and the temperature and density of thermal plasma can only be...

AI Technical Summary

Problems solved by technology

However, due to the limitation of laser output power, the application of ELA technology in large-area processing makes the processing cost high, and the thermal plasma jet preparation process can well overcome this series of bottleneck problems

[0003] Corresponding thermal plasma jet generating devices have appeared on the market, but the existing thermal plasma jet generating devices only have a single radio frequency power supply, and the temperature and density of thermal plasma can only be adjusted by radio frequency power supply. Parameter adjustment is relatively simple

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