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Thin film solar cell and preparation method thereof

A technology of solar cells and thin films, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low conversion efficiency of thin-film solar cells, and achieve the effect of improving quantum efficiency and conversion efficiency

Pending Publication Date: 2019-11-15
上海祖强能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the buffer layer formed by the existing Zn(O,S) optical material and the conversion efficiency of thin-film solar cells are low.

Method used

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  • Thin film solar cell and preparation method thereof
  • Thin film solar cell and preparation method thereof
  • Thin film solar cell and preparation method thereof

Examples

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preparation example Construction

[0025] The invention provides a thin-film solar cell and a preparation method thereof, which are used to provide a buffer layer of a thin-film solar cell with a gradually changing bandgap, increase the bandgap width of the buffer layer, and thereby facilitate obtaining the spectral response in the blue light region and improve the performance of the thin-film solar cell. Quantum efficiency and conversion efficiency.

[0026] see figure 1 , a thin-film solar cell provided by an embodiment of the present invention includes: a substrate 01, a buffer layer disposed on the substrate 01, the buffer layer includes a zinc oxide thin film and a zinc sulfide thin film arranged overlappingly, wherein, as figure 1 As shown, the buffer layer at least includes: a first zinc oxide film layer 02, a first zinc sulfide film layer 03, a second zinc oxide film layer 04, and a second zinc sulfide film layer 05 sequentially arranged on the substrate 01; wherein, The content of oxygen atoms in the ...

Embodiment 1

[0104] The pulse sequence in the buffer layer preparation method is:

[0105] Step 1, forming a zinc oxide film layer through 60 ZnO pulse cycles;

[0106] Step 2, forming overlapping zinc oxide film layers and zinc sulfide film layers through 4 ZnO pulse cycles and 1 ZnS pulse cycle, and repeating the 4 ZnO pulse cycles and 1 ZnS pulse cycle for a total of 12 times, thereby passing 60 pulse cycles form zinc oxide film and zinc sulfide film;

[0107] Step 3, forming overlapping zinc oxide film layers and zinc sulfide film layers through 1 ZnO pulse cycle and 1 ZnS pulse cycle, and repeating the 1 ZnO pulse cycle and 1 ZnS pulse cycle for a total of 30 times, thereby passing 60 pulse cycles form zinc oxide film and zinc sulfide film;

[0108] Step 4, forming overlapping zinc oxide film layers and zinc sulfide film layers through 1 ZnO pulse cycle and 4 ZnS pulse cycles, and repeating the 1 ZnO pulse cycle and 4 ZnS pulse cycles for a total of 12 times, thereby passing 60 pul...

Embodiment 2

[0111] The pulse sequence in the buffer layer preparation method is:

[0112] Step 1, forming a zinc oxide film layer through 60 ZnO pulse cycles;

[0113] Step 2, forming overlapping zinc oxide film layers and zinc sulfide film layers through 9 ZnO pulse cycles and 1 ZnS pulse cycle, and repeating the 9 ZnO pulse cycles and 1 ZnS pulse cycle for a total of 6 times, thereby passing 60 pulse cycles form zinc oxide film and zinc sulfide film;

[0114] Step 3, forming overlapping zinc oxide film layers and zinc sulfide film layers through 1 ZnO pulse cycle and 1 ZnS pulse cycle, and repeating the 1 ZnO pulse cycle and 1 ZnS pulse cycle for a total of 30 times, thereby passing 60 pulse cycles form zinc oxide film and zinc sulfide film;

[0115] Step 4, forming overlapping zinc oxide film layers and zinc sulfide film layers through 1 ZnO pulse cycle and 9 ZnS pulse cycles, and repeating the 1 ZnO pulse cycle and 9 ZnS pulse cycles for a total of 6 times, thereby passing 60 pulse...

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Abstract

The invention discloses a thin film solar cell and a preparation method thereof. A cadmium-free thin film solar cell buffer layer with a band gap gradation is provided to increase the band gap width of the buffer layer, which is favorable for obtaining the spectral response of a blue region, reducing the light reflectivity, increasing the transmittance, and improving the quantum efficiency and conversion efficiency of a thin film solar cell. The thin film solar cell comprises a substrate and a buffer layer arranged on the substrate. The buffer layer comprises overlapped zinc oxide film layersand zinc sulfide film layers. The buffer layer comprises at least a first zinc oxide film layer, a first zinc sulfide film layer, a second zinc oxide film layer and a second zinc sulfide film layer, which are sequentially arranged on the substrate. The content of oxygen atoms in the first zinc oxide film layer in the total amount of oxygen atoms and sulfur atoms in the first zinc oxide film layerand the first zinc sulfide film layer is greater than the content of oxygen atoms in the second zinc oxide film layer in the total amount of oxygen atoms and sulfur atoms in the second zinc oxide filmlayer and the second zinc sulfide film layer.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a thin-film solar cell and a preparation method thereof. Background technique [0002] In a traditional copper indium gallium selenide (CIGS) thin film solar cell, a buffer layer is provided. The main function of the buffer layer is to form a pn junction with the absorber layer, which is used as the working area of ​​the thin film solar cell, and can convert light energy into electrical energy. . [0003] In order to form a good pn junction with the absorber layer, there must be good energy band matching between the buffer layer and the absorber layer to obtain the maximum open circuit voltage. In the prior art, CdS is used as a buffer layer, but Cd is a poisonous element and will cause harm to the environment. Moreover, the band gap of CdS is 2.4-2.5eV, which will absorb high-energy photons of 350-550nm in the solar spectrum, resulting in the loss of photocurrent...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0392H01L31/18
CPCH01L31/03923H01L31/035272H01L31/18Y02E10/541Y02P70/50
Inventor 郭逦达叶亚宽赵树利杨立红
Owner 上海祖强能源有限公司
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