Bulk acoustic wave resonator integrated with fish-scale-shaped reflector array and processing method of bulk acoustic wave resonator

A technology of bulk acoustic wave resonators and mirror arrays, applied in electrical components, impedance networks, etc., can solve the problems of large anchor point loss, difficult application, low quality factor, etc., and achieve reduced mechanical reliability, good performance, and reduced acoustic waves. Effect

Inactive Publication Date: 2019-11-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Description
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  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of large anchor point loss, low quality factor and difficulty in practical application of BAW resonators in the prior art, and propose a BAW resonator with an integrated fish-scale reflector array and Its processing method can effectively reduce the anchor point loss of the bulk acoustic wave resonator and improve the quality factor and reliability of the device

Method used

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  • Bulk acoustic wave resonator integrated with fish-scale-shaped reflector array and processing method of bulk acoustic wave resonator
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  • Bulk acoustic wave resonator integrated with fish-scale-shaped reflector array and processing method of bulk acoustic wave resonator

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Embodiment 1

[0038] An embodiment of the present invention provides a bulk acoustic wave resonator integrated with a fish-scale reflector array, such as figure 1 and figure 2 As shown, it includes a SOI (Silicon-On-Insulator, silicon on insulator) substrate 1, an input electrode disk 2 located on the top of the SOI substrate 1, an output electrode disk 3, and a ground electrode disk 4, and is fixed and suspended on the SOI by a support beam 5. The resonator 6 at the center of the substrate 1, the fish scale mirror array 7 is integrated on both sides of the resonator 6; the input electrode disk 2 and the output electrode disk 3 are symmetrically arranged on both sides of the top of the SOI substrate 1, and the input electrode disk 2 and the output electrode disk Both sides of the electrode plate 3 are symmetrically provided with the ground electrode plate 4; the resonator 6 is suspended in the middle of the SOI substrate 1 by the support beam 5, and the interdigitated electrodes on the top...

Embodiment 2

[0054] An embodiment of the present invention provides a method for processing a bulk acoustic wave resonator integrated with a scale mirror array, such as Figure 7 As shown, the following steps S1-S9 are included:

[0055] S1. Select an SOI wafer with a crystal orientation, and set the top layer doped silicon with a thickness of 10±1 μm, the first buried oxide layer with a thickness of 1±0.05 μm, and the back layer with a thickness of 400±5 μm from top to bottom. Substrate silicon, get SOI substrate.

[0056] S2. Doping phosphorus into the doped silicon on the top layer of the SOI substrate to form a conductive layer, which serves as the ground layer of the entire bulk acoustic wave resonator.

[0057] S3, performing thermal oxidation on the top doped silicon to form 2000A 0 silicon dioxide, and obtain the second buried oxide layer of the contact part between the electrode plate and the top-layer doped silicon and the contact part between the metal wiring and the top-laye...

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Abstract

The invention discloses a bulk acoustic wave resonator integrated with a fish-scale-shaped reflector array and a processing method of the bulk acoustic wave resonator. The bulk acoustic wave resonatorcomprises an SOI substrate, an input electrode disc, an output electrode disc, a ground electrode disc and a resonance body, wherein the input electrode disc, the output electrode disc and the groundelectrode disc are located at the top end of the SOI substrate, the resonance body is fixed through a supporting beam and suspended in the center of the SOI substrate, and fish-scale-shaped reflectorarrays are integrated on the two sides of the resonance body. The input electrode disc and the output electrode disc are symmetrically arranged on the two sides of the top end of the SOI substrate, and the ground electrode discs are symmetrically arranged on the two sides of the input electrode disc and the two sides of the output electrode disc. The scale-shaped reflector array is formed by arranging four rows of reflectors in a staggered mode and is integrated at the tail ends of the two sides of the resonance body. According to the bulk acoustic wave resonator, the problems of large anchorpoint loss and low quality factor of the existing bulk acoustic wave resonator are solved, and the application of the bulk acoustic wave resonator in a low-phase noise oscillator, a narrow-band filter and a high-precision sensor is facilitated.

Description

technical field [0001] The invention belongs to the technical field of radio frequency micro-electromechanical systems, and in particular relates to the design of a bulk acoustic wave resonator integrating fish-scale reflector arrays and a processing method thereof. Background technique [0002] Micro-Electro-Mechanical System (MEM) is a revolutionary new technology, showing broad application prospects in many fields due to its miniaturization and high integration. MEMS resonators are an important application of MEMS technology in the radio frequency field. MEMS resonators with small size, low power consumption, high performance and the ability to integrate with CMOS (Complementary Metal Oxide Semiconductor) circuits are expected to drive the development of a new generation of highly integrated electronic devices . Compared with traditional electrical resonant devices, MEMS resonators based on acoustic theory can greatly reduce the size of the circuit, because the size of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02
CPCH03H3/02H03H9/02007
Inventor 宋亚梅周鑫鲍景富鲍飞鸿张翼吴兆辉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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