Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

a three-dimensional sno 2 /ag NPs Raman enhanced substrate and its preparation method and application

A substrate, three-dimensional technology, applied in the field of three-dimensional SnO2/AgNPs Raman-enhanced substrate and its preparation, can solve the problem of low enhancement effect of semiconductor substrate, unsuitable for detecting low-concentration samples, limiting the development and application of Raman detection technology, high material cost, etc. problems, to achieve excellent detection sensitivity, high Raman enhancement effect, and the effect of a wide range of applications

Active Publication Date: 2022-04-15
SHANDONG NORMAL UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the present inventors have found that although noble metal substrates have a significant enhancement effect, their material costs are expensive and the preparation process is complicated; semiconductor substrates are economical in cost but have a low enhancement effect and are not suitable for detecting low-concentration samples. The defect limitations of these substrates severely limit the Development and Application of Man Detection Technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a three-dimensional sno  <sub>2</sub> /ag NPs Raman enhanced substrate and its preparation method and application
  • a three-dimensional sno  <sub>2</sub> /ag NPs Raman enhanced substrate and its preparation method and application
  • a three-dimensional sno  <sub>2</sub> /ag NPs Raman enhanced substrate and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] A three-dimensional SnO 2 The preparation method of / Ag NPs Raman enhanced substrate comprises the following steps:

[0054] (1) SnO 2 preparation:

[0055] First, dissolve tin tetrachloride in distilled water to form a tin chloride solution, slowly add ammonia (mass concentration 22%) to the solution and measure the pH of the solution with a pH meter until the pH value of the solution reaches 9, stirring continuously during this process.

[0056] Then move the pH-adjusted solution to the heating kettle, fasten the lid of the heating kettle, put the heating kettle in the oven, place it in an environment of 100°C for 1 hour to produce a white precipitate, centrifuge the white precipitate, and freeze-dry it for 24 hours. hours, repeat the above steps with deionized water and ethanol, and wash with water three times to obtain the alcohol-washed SnO 2 powder.

[0057] The SnO 2 The powder and n-butanol are mixed according to the ratio of 0.5g: 20ml, then transferred to ...

Embodiment 2

[0064] A three-dimensional SnO 2 The preparation method of / Ag NPs Raman enhanced substrate comprises the following steps:

[0065] (1) SnO 2 preparation:

[0066] First, dissolve tin tetrachloride in distilled water to form a tin chloride solution, slowly add ammonia (20% mass concentration) to the solution and measure the pH of the solution with a pH meter until the pH value of the solution reaches 9, stirring continuously during this process.

[0067] Then move the adjusted pH solution to the heating kettle, fasten the lid of the heating kettle, put the heating kettle in the oven, and place it in an environment of 120°C for 50 minutes to produce a white precipitate, centrifugally filter the white precipitate, and freeze-dry for 22 hours , repeat the above steps with deionized water and ethanol, and wash with water three times to obtain alcohol-washed SnO 2 powder.

[0068] The SnO 2 The powder and n-butanol are mixed according to the ratio of 1.5g: 40ml, then transferre...

Embodiment 3

[0075] A three-dimensional SnO 2 The preparation method of / Ag NPs Raman enhanced substrate comprises the following steps:

[0076] (1) SnO 2 preparation:

[0077] First, dissolve tin tetrachloride in distilled water to form a tin chloride solution, slowly add ammonia water (mass concentration 26%) to the solution and measure the pH of the solution with a pH meter until the pH value of the solution reaches 8, stirring continuously during this process.

[0078] Then move the adjusted pH solution to the heating kettle, fasten the lid of the heating kettle, and put the heating kettle in the oven, place it in an environment of 80°C for 2 hours to produce a white precipitate, centrifuge the white precipitate, freeze-dry for 25 hours, repeat the above steps with deionized water and ethanol, and wash with water three times to obtain the alcohol-washed SnO 2 powder.

[0079] The SnO 2 The powder and n-butanol are mixed according to the ratio of 0.3g: 15ml, then transferred to a th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of Raman-enhanced substrates, in particular to a three-dimensional SnO 2 / Ag NPs Raman-enhanced substrate and its preparation method and application. The Raman enhanced substrate includes substrate, SnO 2 film layer and Ag NPs; the SnO 2 film layer attached to the substrate surface, the SnO 2 The surface of the film layer is rough, forming a three-dimensional porous structure, and the Ag NPs are dispersed in the SnO 2 on the film layer, and partially on the SnO 2 In the pores of the film layer, SnO 2 Together with Ag NPs to form a perovskite material. The present invention uses SnO 2 The preparation of three-dimensional (3D) SERS active substrates as substrates can provide a larger surface area than a smooth surface for adsorption of silver nanoparticles, thereby providing more reaction points to capture more probe molecules and improve detection sensitivity. Moreover, the three-dimensional substrate structure has a light confinement effect, which can accumulate and absorb the scattered light in the substrate, resulting in a higher Raman enhancement effect.

Description

technical field [0001] The invention relates to the technical field of Raman-enhanced substrates, in particular to a three-dimensional SnO 2 / Ag NPs Raman-enhanced substrate and its preparation method and application. Background technique [0002] The information disclosed in the Background of the Invention is only intended to increase the understanding of the general background of the invention, and is not necessarily to be taken as an acknowledgment or any form of suggestion that the information constitutes the prior art that is already known to those skilled in the art. [0003] Since the surface-enhanced Raman scattering (SERS) detection technology was proposed in the 1970s, because of its advantages such as high detection sensitivity and specificity, SERS has been used as a sensor and spectroscopic technology in chemical, biological sensing, and environmental sensing. It is widely used in monitoring surfaces and other fields, but the traditional Raman detection substra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/65
CPCG01N21/658
Inventor 王明辉郁菁周航余东方
Owner SHANDONG NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products