A method for cleaning a silicon substrate

A silicon substrate and physical cleaning technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of poor cleaning effect of residues at the root of carbon nanotubes, easy corrosion of oxide layers, etc., and achieve extreme spinning performance Good, low yield, highly uniform results

Active Publication Date: 2021-10-01
CONE SCI CITY GUANGZHOU ADVANCED MATERIALS CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a cleaning method for a silicon substrate, aiming at solving the problem that the existing cleaning technology is easy to corrode and damage the oxide layer on the surface of the silicon substrate, and the cleaning effect of the carbon nanotube root residue on the surface of the silicon substrate is not good

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  • A method for cleaning a silicon substrate
  • A method for cleaning a silicon substrate
  • A method for cleaning a silicon substrate

Examples

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Effect test

Embodiment 1

[0062] Obtain 200 8-inch silicon substrates with residual carbon nanotubes and other impurities, and use high-temperature burning for processing. Specifically, the silicon substrate after carbon nanotube growth was placed in an oven, and the high-temperature burning temperature was set to 650° C., and the burning treatment was performed for 2 minutes. The silicon substrate burned at high temperature is chemically cleaned with an acid solution, the acid solution is an SPM acid solution, and the cleaning treatment is carried out at a temperature of 110° C. for 15 minutes. Wherein, the SPM acid solution is a mixed solution of concentrated sulfuric acid and hydrogen peroxide, the mass concentration of the concentrated sulfuric acid is 95-98%, the mass concentration of the hydrogen peroxide is 25-35%, and the concentrated The volume ratio of sulfuric acid and the hydrogen peroxide is 40:1. Perform physical cleaning on the silicon substrate after chemical cleaning, first wash and r...

Embodiment 2

[0064]Obtain 200 8-inch silicon substrates with residual carbon nanotubes and other impurities, and use high-temperature burning for processing. Specifically, the silicon substrate after carbon nanotube growth was placed in an oven, and the high-temperature burning temperature was set to 600° C., and the burning treatment was performed for 3 minutes. The high-temperature-treated silicon substrate is chemically cleaned with an acid solution, the acid solution is an HPM acid solution, and the cleaning treatment is carried out at a temperature of 70° C. for 15 minutes. Wherein, the HPM acid solution is a mixed solution of deionized water, hydrogen peroxide, and hydrochloric acid, the mass concentration of the hydrogen peroxide is 25-35%, the mass concentration of the hydrochloric acid is 30-35%, and the mixed solution contains The volume ratio of the deionized water, the hydrogen peroxide, and the hydrochloric acid is 5:1:1. Physically clean the silicon substrate after chemical ...

Embodiment 3

[0066] Obtain 200 8-inch silicon substrates with residual carbon nanotubes and other impurities, and use high-temperature burning for processing. Specifically, the silicon substrate after carbon nanotube growth is placed in an oven, and the high-temperature burning temperature is set to 700° C., and the burning treatment is performed for 1 minute. The silicon substrate burned at high temperature is chemically cleaned with an acid solution, the acid solution is a hydrochloric acid solution, and the cleaning treatment is carried out at a temperature of 70° C., and the treatment time is 15 minutes. Wherein, the hydrochloric acid solution is a hydrochloric acid solution with a mass concentration of 20-35%. Perform physical cleaning on the silicon substrate after chemical cleaning, first wash and rinse with pure water for 6 minutes, and then scrub with a flat-panel cleaning machine. The specific steps are to take the silicon wafer out of the net bag and place it horizontally On th...

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Abstract

The invention provides a method for cleaning a silicon substrate, comprising the following steps: obtaining a silicon substrate with residual carbon nanotubes and other impurities, burning the silicon substrate at a high temperature; cleaning the silicon substrate burned at a high temperature with an acid solution Chemical cleaning treatment; performing physical cleaning treatment on the silicon substrate after chemical cleaning treatment; drying the silicon substrate after physical cleaning treatment, and then obtaining a reusable silicon substrate. After cleaning, the surface color of the silicon wafer is uniform, without spots and gray marks; the secondary carbon nanotube growth test shows that the output of carbon nanotubes reaches 90%-97.8% of the new silicon wafer, which basically meets the target requirements.

Description

technical field [0001] The invention belongs to a silicon chip cleaning process, in particular to a cleaning method for a silicon substrate with carbon nanotube residues on the surface. Background technique [0002] In recent years, with the in-depth research on carbon nanotubes and nanomaterials, the demand for carbon nanotubes is increasing, and its broad application prospects are constantly showing. Carbon nanotubes, also known as bucky tubes, are one-dimensional quantum materials with a special structure (the radial dimension is on the order of nanometers, the axial dimension is on the order of microns, and both ends of the tube are basically sealed). Carbon nanotubes are mainly coaxial tubes with several to tens of layers of carbon atoms arranged in a hexagonal shape. A fixed distance is maintained between layers, about 0.34nm, and the diameter is generally 2 to 20nm. And according to the different orientations of the carbon hexagon along the axial direction, it can b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02054
Inventor 辛培培
Owner CONE SCI CITY GUANGZHOU ADVANCED MATERIALS CO LTD
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