A method for cleaning a silicon substrate

Abstract

The invention provides a method for cleaning a silicon substrate, comprising the following steps: obtaining a silicon substrate with residual carbon nanotubes and other impurities, burning the silicon substrate at a high temperature; cleaning the silicon substrate burned at a high temperature with an acid solution Chemical cleaning treatment; performing physical cleaning treatment on the silicon substrate after chemical cleaning treatment; drying the silicon substrate after physical cleaning treatment, and then obtaining a reusable silicon substrate. After cleaning, the surface color of the silicon wafer is uniform, without spots and gray marks; the secondary carbon nanotube growth test shows that the output of carbon nanotubes reaches 90%-97.8% of the new silicon wafer, which basically meets the target requirements.

Description

technical field

[0001] The invention belongs to a silicon chip cleaning process, in particular to a cleaning method for a silicon substrate with carbon nanotube residues on the surface. Background technique

[0002] In recent years, with the in-depth research on carbon nanotubes and nanomaterials, the demand for carbon nanotubes is increasing, and its broad application prospects are constantly showing. Carbon nanotubes, also known as bucky tubes, are one-dimensional quantum materials with a special structure (the radial dimension is on the order of nanometers, the axial dimension is on the order of microns, and both ends of the tube are basically sealed). Carbon nanotubes are mainly coaxial tubes with several to tens of layers of carbon atoms arranged in a hexagonal shape. A fixed distance is maintained between layers, about 0.34nm, and the diameter is generally 2 to 20nm. And according to the different orientations of the carbon hexagon along the axial direction, it can b...

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