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Method for preparing vertical cavity surface emitting laser by in-situ growth perovskite single crystal thin film, and vertical cavity surface emitting laser

A vertical cavity surface emission, single crystal thin film technology, applied in the field of lasers, can solve the problems of high relative threshold of lasers and affecting laser performance, etc.

Inactive Publication Date: 2019-11-26
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This solution method has the advantages of simple process and low cost, and can prepare perovskite polycrystalline films with a thickness of tens of nanometers to hundreds of nanometers. However, the performance of polycrystalline films is not as good as that of single crystal films, and the relative threshold of lasers will be higher.
And this method of directly covering the DBR top sheet on the perovskite film inevitably leaves a gas layer between the perovskite film and the upper DBR top sheet, which affects the performance of the laser.

Method used

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  • Method for preparing vertical cavity surface emitting laser by in-situ growth perovskite single crystal thin film, and vertical cavity surface emitting laser
  • Method for preparing vertical cavity surface emitting laser by in-situ growth perovskite single crystal thin film, and vertical cavity surface emitting laser
  • Method for preparing vertical cavity surface emitting laser by in-situ growth perovskite single crystal thin film, and vertical cavity surface emitting laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Prepare a yellow-green perovskite vertical cavity surface-emitting laser with an emission wavelength of about 560nm, and choose a CH with a free-space emission wavelength slightly lower than 560nm 3 NH 3 PbBr 3 (540nm) as a gain medium.

[0045] Experimental steps:

[0046] (1) According to the emission wavelength and CH of the required laser 3 NH 3 PbBr 3 The wavelength of light emission, select a distributed Bragg reflector (DBR) sheet with a central wavelength of about 540nm in the high reflectivity area and a width of 500-600nm, with an area of ​​1cm 2 ;

[0047] (2) Configure CH 3 NH 3 PbBr 3 Solution:

[0048] Take anhydrous N,N-dimethylformamide (DMF) as solvent, CH 3 NH 3 Br (purity 99%) powder and PbBr 2 (purity 99.99%) powder 1:1 molar ratio mixture as solute, configure CH 3 NH 3 PbBr 3 After the saturated solution was fully stirred and dissolved, the above solution was filtered through a polytetrafluoroethylene filter membrane with a pore size...

Embodiment 2

[0056] Prepare a blue-light perovskite vertical cavity surface-emitting laser with an emission wavelength of about 425nm, and select a CH with a free-space emission wavelength slightly lower than 425nm 3 NH 3 PbCl 3 (410nm) as a gain medium.

[0057] Experimental steps:

[0058] (1) According to the emission wavelength and CH of the required laser 3 NH 3 PbCl 3 The wavelength of light emission, select a distributed Bragg reflector (DBR) sheet with a central wavelength of about 415nm in the high reflectivity area and a width of 400-440nm, with an area of ​​1cm 2 ;

[0059] (2) Configure CH 3 NH 3 PbCl 3 solution.

[0060] Take a mixture of anhydrous N,N-dimethylformamide (DMF) and anhydrous dimethyl sulfoxide (DMSO) at a volume ratio of 1:1 as a solvent, CH 3 NH 3 Cl (purity 99%) powder and PbCl 2 (purity 99.99%) powder 1:1 molar ratio mixture as solute, configuration CH 3 NH 3 PbCl 3 After the saturated solution was fully stirred and dissolved, the above soluti...

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Abstract

The invention relates to the technical field of lasers, and provides a method for preparing a vertical cavity surface emitting laser by an in-situ growth perovskite single crystal thin film, and the vertical cavity surface emitting laser. By adopting the method provided by the invention, a solvent in a perovskite solution slowly volatilizes between two DBR pieces, thereby forming a perovskite single crystal, and under the limitation of the two DBR pieces, the perovskite single crystal grows on one dimension to finally form the perovskite single crystal thin film. By adopting the method provided by the invention, a large-area and high-quality perovskite single crystal thin film can be obtained, which has better luminescence property and stability than a polycrystalline thin film, the in-situ growth perovskite single crystal thin film is in close contact with the upper and lower DBR pieces, so there is no residual gas layer, the obtained vertical cavity surface emitting laser has good luminescence property and stability, and the wavelength and mode are adjustable; and the preparation method provided by the invention has the advantages of simple steps and low cost.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a method for preparing a vertical-cavity surface-emitting laser by in-situ growth of a perovskite single-crystal film and a vertical-cavity surface-emitting laser. Background technique [0002] Laser science and technology is an important foundation of modern society, and the development of wavelength-tunable laser materials and low-cost lasers has always been the current research goal. Perovskite materials have excellent optical properties. In addition to the characteristics of full coverage of wavelengths in the visible light range, they also have the characteristics of high fluorescence quantum yield, low defect state density and high gain coefficient that should be used as luminescent materials. At the same time, the perovskite material is cheap and the preparation process is simple. These unique properties demonstrate its potential application in the field of lasers, attract...

Claims

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Application Information

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IPC IPC(8): H01S5/183H01S5/187H01S5/04C30B29/64C30B29/12C30B7/06
CPCC30B7/06C30B29/12C30B29/64H01S5/041H01S5/183H01S5/18361H01S5/187
Inventor 李艳平田程冉广照
Owner PEKING UNIV
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