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High-current gan schottky diode with alternating cathode and anode and its manufacturing method

A Schottky diode and high-current technology, which is applied in the direction of diodes, circuits, electrical components, etc., can solve the problem that the current cannot meet the needs of high-frequency and power devices, so as to facilitate the production of large-scale integrated circuits, reduce the chip area, and improve The effect of current density

Active Publication Date: 2021-02-02
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to propose a high-current GaN Schottky diode with alternating cathode and anode and a manufacturing method for the current of the GaN Schottky diode device of the existing annular groove that cannot meet the needs of high-frequency and power devices. To improve the utilization rate of the anode, increase the current density, and meet the application requirements of GaN-based electronic devices in the field of high-frequency devices and power devices

Method used

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  • High-current gan schottky diode with alternating cathode and anode and its manufacturing method
  • High-current gan schottky diode with alternating cathode and anode and its manufacturing method
  • High-current gan schottky diode with alternating cathode and anode and its manufacturing method

Examples

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Effect test

Embodiment 1

[0038] Embodiment 1, fabricating a GaN Schottky diode whose anode metal is W and whose substrate is SiC.

[0039] Step 1: Clean the epitaxial wafer material.

[0040] The epitaxial wafer used in this example includes the epitaxial wafer material of substrate, high resistance Buffer layer, AlN insertion layer, AlGaN barrier layer and GaN layer from bottom to top, wherein the substrate material is SiC, and the C of the high resistance Buffer layer The doping concentration is 10 18 cm -3 , the thickness is 3 μm, the thickness of the AlGaN barrier layer is 25nm, the Al composition is 20%, the thickness of the AlN insertion layer is 1nm, and the thickness of the GaN layer is 1nm;

[0041] The aforementioned epitaxial wafer was ultrasonically cleaned with acetone for 2 minutes, then with ethanol for 2 minutes, and finally with deionized water for 3 minutes.

[0042] Step 2: growing an LP-SiN passivation layer.

[0043] First put the cleaned epitaxial wafer into the cavity of the...

Embodiment 2

[0059] Embodiment 2, making anode metal is Mo / Au, and substrate is Al 2 o 3 GaN Schottky diodes.

[0060] Step 1: Clean the epitaxial wafer material.

[0061] The epitaxial wafer used in this example includes the epitaxial wafer material of substrate, high resistance Buffer layer, AlN insertion layer, AlGaN barrier layer and GaN layer from bottom to top, wherein the substrate material is Al 2 o 3 , the C doping concentration of the high-resistance Buffer layer is 10 19 cm -3 , the thickness is 3.5 μm, the thickness of the AlGaN barrier layer is 27.5nm, the Al composition is 25%, the thickness of the AlN insertion layer is 1.5nm, and the thickness of the GaN layer is 2nm;

[0062] The above-mentioned epitaxial wafer was ultrasonically cleaned with acetone for 2 minutes, then with ethanol for 2 minutes, and finally with deionized water for 3 minutes.

[0063] Step 2: growing an LP-SiN passivation layer with a thickness of 25 nm on the epitaxial wafer, and cleaning it, and ...

Embodiment 3

[0085] Embodiment 3, making anode metal is Ni / Au, and substrate is Al 2 o 3 GaN Schottky diodes.

[0086] Step A: cleaning the epitaxial wafer material.

[0087] The epitaxial wafer used in this example includes the epitaxial wafer material of substrate, high resistance Buffer layer, AlN insertion layer, AlGaN barrier layer and GaN layer from bottom to top, wherein the substrate material is Al 2 o 3 , the C doping concentration of the high-resistance Buffer layer is 10 19 cm -3 , the thickness 4 is μm, the thickness of the AlGaN barrier layer is 30nm, the Al composition is 30%, the thickness of the AlN insertion layer is 2nm, and the thickness of the GaN layer is 3nm;

[0088] The above-mentioned epitaxial wafer was ultrasonically cleaned with acetone and ethanol for 2 minutes in sequence, and then ultrasonically cleaned with deionized water for 3 minutes.

[0089] Step B: growing an LP-SiN passivation layer.

[0090] B1) Put the cleaned epitaxial wafer into the chamber...

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Abstract

The invention discloses a high-current GaN Schottky diode device with alternating cathode and anode, which mainly solves the problem that the existing GaN Schottky diode device cannot meet the application requirements of higher current and higher power. From bottom to top, the device includes: A substrate (1), a high resistance Buffer layer (2), an AlGaN barrier layer (3), an AlN insertion layer (4) and a GaN layer (5); the GaN layer (5) is provided with a passivation layer (6) and The cathode (7), the passivation layer (6) and the cathode (7) are provided with a dielectric layer (8); the high resistance Buffer layer, the AlGaN barrier layer, the AlN insertion layer, the GaN layer, the passivation layer and the dielectric layer penetrate through There is a groove (9), an anode (10) is arranged on the groove, and the cathode and the anode adopt a concentric alternating nested structure of the anode ring and the cathode ring. The invention improves the utilization rate of the anode, increases the current density, and can be used for microwave rectification, limiter, power switch and power conversion circuit.

Description

technical field [0001] The invention belongs to the technical field of wide bandgap semiconductor devices, in particular to a GaN Schottky diode, which can be used in microwave rectification, limiter, power switch and power conversion circuits. Background technique [0002] Power devices featuring low power consumption and high speed have recently attracted a lot of attention as the need for efficient and complete power conversion circuits and systems has increased. Power electronic devices such as power rectifiers and power switches are widely used in various fields. However, with the development of silicon technology for many years, silicon-based power electronic devices have gradually approached their theoretical limits. In recent years, the third-bandgap semiconductors represented by SiC and GaN have attracted widespread international attention due to their performance advantages such as large bandgap, high breakdown electric field, high thermal conductivity, and high sa...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L21/329H01L29/06H01L29/20H01L29/41
CPCH01L29/0603H01L29/0684H01L29/2003H01L29/41H01L29/66212H01L29/872
Inventor 陈大正张春福吴艺聪赵胜雷张雅超朱卫东张进成郝跃
Owner XIDIAN UNIV