Low-stress damp-heat-resistant composite thermal control film and preparation method thereof

A heat-controlling thin-film and moisture-resistant technology, which is applied in ion implantation plating, coating, metal material coating process, etc., can solve the problem of weak resistance to moisture and heat of the film layer, high stress of the film layer, and failure to meet the application requirements of space vehicles and other issues to achieve the effect of improving the resistance to heat and humidity

Active Publication Date: 2019-12-03
LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large number of film layers and the SiO 2 The emissivity layer is a uniform structure, a single structure of SiO 2 As a result, the stress of the entire film layer is relatively large, and the film layer has weak heat and humidity resistance, which cannot meet the application requirements of space vehicles.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A method for preparing a low-stress heat-and-humidity resistant composite thermal control film, the steps of the method are as follows:

[0021] (1) Use the ion source to activate the surface of the workpiece. The ion source activation power supply is in the current working mode, the control current is 1.70A, the power is 850W, and the processing time is 30s.

[0022] (2) The Al reflectivity layer was plated by sputtering: the sputtering pressure was 0.35Pa, the sputtering power was 4000W, and the deposition time was 10s to obtain an Al reflectivity layer with a film thickness of 150nm.

[0023] (3) Plating Al by intermediate frequency reactive magnetron sputtering on twin targets 2 o 3 Transition layer: sputtering pressure 0.35Pa, sputtering power 5000W, deposition time 1.5h, to obtain Al with a film thickness of 3μm 2 o 3 transition layer.

[0024] (4) Plating SiO by twin target medium frequency reactive magnetron sputtering 2 Emissivity layer: where the sputteri...

Embodiment 2

[0028] A method for preparing a low-stress heat-and-humidity resistant composite thermal control film, the steps of the method are as follows:

[0029] (1) Use the ion source to activate the surface of the workpiece. The ion source activation power supply is in the current working mode, the control current is 1.70A, the power is 850W, and the processing time is 30s.

[0030] (2) The Al reflectivity layer was plated by sputtering: the sputtering pressure was 0.35Pa, the sputtering power was 4000W, and the deposition time was 10s to obtain an Al reflectivity layer with a film thickness of 150nm.

[0031] (3) Plating Al by intermediate frequency reactive magnetron sputtering on twin targets 2 o 3 Transition layer: sputtering pressure 0.35Pa, sputtering power 5000W, deposition time 45min, to obtain Al with a film thickness of 750nm 2 o 3 transition layer.

[0032] (4) Plating SiO by twin target medium frequency reactive magnetron sputtering 2 Emissivity layer: where the sputt...

Embodiment 3

[0036] A method for preparing a low-stress heat-and-humidity resistant composite thermal control film, the steps of the method are as follows:

[0037] (1) Use the ion source to activate the surface of the workpiece. The ion source activation power supply is in the current working mode, the control current is 1.70A, the power is 850W, and the processing time is 30s.

[0038] (2) Coating the Al reflectivity layer by sputtering: the sputtering pressure is 0.35Pa, the sputtering power is 4000W, and the Al reflectivity layer with a film thickness of 150nm is obtained.

[0039] (3) Plating Al by intermediate frequency reactive magnetron sputtering on twin targets 2 o 3 Transition layer: the sputtering pressure is 0.35Pa, the sputtering power is 5000W, and the film thickness is 150nm Al 2 o 3 transition layer.

[0040] (4) Plating SiO by twin target medium frequency reactive magnetron sputtering 2 Emissivity layer: where the sputtering pressure is 0.8Pa and the sputtering power i...

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Abstract

The invention relates to a low-stress damp-heat-resistant composite thermal control film and a preparation method thereof, and belongs to the technical field of thermal control films; the thin film comprises a reflectivity layer, a transition layer, an emissivity layer and a conductive layer which are sequentially deposited on a substrate; the Al2O3 transition layer is additionally arranged between the high-reflectivity layer and the SiO2 emissivity layer, so that the adhesive force between the reflectivity layer and the main emissivity layer can be improved, and the thermal control parametersof the film can be regulated and controlled. By controlling the density and microstructure of the main emissivity layer, the SiO2 inner layer is in a loose state, the outer layer is high in density,the overall stress of the film is low, the high-density SiO2 of the outer layer achieves effective blocking of water vapor, and the damp-heat resistance of the whole film system is improved. The thermal control film meets the requirement for film layer adhesive force larger than 4 N / cm, and meanwhile the test requirement for the 24-hour 95% humidity is met.

Description

technical field [0001] The invention relates to a low-stress heat-and-humidity resistant composite thermal control film and a preparation method thereof, belonging to the technical field of thermal control films. Background technique [0002] With the development of space technology, the structure and function of spacecraft such as satellites are becoming more and more complex, and the demand for thermal control performance is also becoming more and more diversified, and it is required to directly deposit thermal control films on the surface of the workpiece to reduce the small weight. Conventional thermal control films have a relatively simple structure, and their solar absorptivity is mainly determined by the characteristics of the surface film, while the infrared emissivity is basically determined by the substrate material. The adjustable range of thermal control parameters is narrow, the application range is limited, and the space environment is stable. Sex is not ideal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/10C23C14/08C23C14/14C23C14/02
CPCC23C14/0036C23C14/022C23C14/081C23C14/10C23C14/14C23C14/35
Inventor 何延春吴春华周晖王志民王艺赵慨王虎杨淼张凯锋左华平
Owner LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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