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Preparation method of thin film on substrate

A technology of substrate and thin film, which is applied in the field of thin film preparation on substrate, can solve problems such as difficult to achieve high-quality single crystal thin film preparation, fragmentation, wafer debonding, etc., to improve film quality and yield, reduce dosage, The effect of reducing production costs

Active Publication Date: 2020-11-24
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the different thermal expansion coefficients between heterogeneous materials often cause debonding or cracking of the wafer during the heating and peeling stage after bonding, making it difficult to achieve high-quality single crystal thin films.

Method used

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  • Preparation method of thin film on substrate
  • Preparation method of thin film on substrate
  • Preparation method of thin film on substrate

Examples

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Effect test

Embodiment 1

[0054] see Figure 1 to Figure 9 , the present embodiment provides a method for preparing a thin film on a substrate, comprising the following steps:

[0055] 1) providing a thin film transfer substrate, the thin film transfer substrate includes a first surface and a second surface oppositely arranged;

[0056] 2) performing ion implantation on the first surface, and forming an implantation damage layer in the thin film transfer substrate;

[0057] 3) providing a supporting substrate, the supporting substrate includes a third surface and a fourth surface oppositely arranged;

[0058] 4) bonding the film transfer substrate and the support substrate via the first surface and the third surface to form a bonded substrate;

[0059] 5) annealing the bonded substrates in a water bath, an oil bath or a salt bath, and simultaneously using ultrasonic or megasonic power to treat the bonded substrates so that the bonded substrates are damaged along the implanted The layers are peeled o...

Embodiment 2

[0078] This embodiment provides a method for preparing a thin film on a substrate. Compared with Embodiment 1, the difference of this embodiment is that the process of annealing the bonded substrate in the annealing medium includes oil The bonded substrates were annealed in a bath.

[0079] As an example, when the bonded substrates are annealed in an oil bath, the annealing medium includes at least one of high-temperature silicone oil, a mixture of glycerin and dibutyl phthalate, or polyethylene glycol, so The heating rate of the annealing is between 0.5° C. / min and 10° C. / min. Compared with Example 1, this example adopts a water-bath annealing process in which high-temperature silicone oil, a mixture of glycerin and dibutyl phthalate, or polyethylene glycol and other oil bath media are used instead of deionized water. Both the oil bath and the water bath are liquid annealing media, and the annealing media can be selected according to the annealing temperature or the material...

Embodiment 3

[0082] This embodiment provides a method for preparing a thin film on a substrate. Compared with Embodiment 1, the difference of this embodiment is that the process of annealing the bonded substrate in the annealing medium includes salt The bonded substrates were annealed in a bath.

[0083] As an example, when the bonded substrate is annealed in a salt bath, the annealing medium includes sodium chloride, potassium chloride, barium chloride, sodium cyanide, potassium cyanide, sodium nitrate or potassium nitrate At least one, the heating rate of the annealing is between 0.5°C / min and 10°C / min. Compared with the water bath or oil bath provided in Embodiment 1 or Embodiment 2, a salt bath is used as an annealing medium in this embodiment, which provides a more comprehensive solution for the annealing temperature used in the present invention or the material composition of the bonded substrate. Wide range of options. According to the selection of different salt bath media, the h...

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Abstract

The invention provides a manufacturing method of a film on a substrate. The method comprises the following steps of providing a film transfer substrate including a first surface and a second surface;carrying out ion implantation on the first surface and forming an implantation damage layer; providing a support substrate including a third surface and a fourth surface; bonding the film transfer substrate and the support substrate to form a bonded substrate; and annealing the bonded substrate in a water bath, an oil bath or a salt bath, and processing the bonded substrate by adopting ultrasonicor megasound power so that the bonded substrate is stripped along the implantation damage layer, and the film located on the support substrate is obtained. In the invention, the water bath, the oil bath or the salt bath is used as an annealing medium to anneal the bonded substrate; and the bonded substrate is processed by adopting ultrasonic or megasound power during annealing so that the bonded substrate is stripped under a condition which is lower than an expected stripping temperature, dosage of ion implantation is reduced, thermal stress distribution during heterogeneous material bonding is optimized, production cost is reduced, and film quality and a yield are improved.

Description

technical field [0001] The invention relates to the technical field of film preparation, in particular to a method for preparing a film on a substrate. Background technique [0002] With people's pursuit of increasing data transmission speed, performance, and power consumption of telecommunication equipment, people need to provide new chip integration solutions to achieve high-performance, high-integration, and low-power chip technology. According to the different properties of the material, people have realized chips with different superior performance based on the superior performance of the material itself. For example, highly integrated silicon chips, high-speed and high-frequency gallium arsenide chips, high-power gallium nitride chips, and piezoelectric chips are widely used in filters of radio frequency systems. [0003] At present, the traditional intelligent peeling method has a thick peeling surface and large peeling cracks, and the surface of the single crystal m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762H01L21/324H01L21/18
CPCH01L21/187H01L21/324H01L21/76254
Inventor 欧欣李忠旭黄凯赵晓蒙李文琴陈阳聂峥
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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