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Split gate 4H-SiC VDMOS device

A split gate and device technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low reliability of body diodes, increase the complexity of circuit design and cost, and achieve the effect of suppressing pinch-off, improving dynamic performance, The effect of good dynamic characteristics

Active Publication Date: 2019-12-03
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reliability of the body diode of the MOSFET is low. In engineering, a diode is usually connected in series with the drain of the MOSFET to prevent the conduction of the parasitic body diode, and then an additional anti-parallel Schottky diode is connected at both ends of the drain and source to provide a new freewheeling path. Obviously , this method greatly increases the complexity and cost of circuit design

Method used

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  • Split gate 4H-SiC VDMOS device
  • Split gate 4H-SiC VDMOS device
  • Split gate 4H-SiC VDMOS device

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Embodiment Construction

[0030] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0031] Such as figure 1 As shown, a split gate 4H-SiC VDMOS device provided by an embodiment of the present invention includes: a drain 1, an N+ substrate 2, an N- epitaxial layer 3, a P well 4, a first N+ region 5, and an N+ source region 6 , P+ contact region 7, gate oxide layer 8, gate 9, Schottky contact 10, source 11, SiO 2 interlayer dielectric 12 and JFET region 13;

[0032] The drain 1, the N+ substrate 2 and the N- epitaxial layer 3 are sequentially stacked from bottom to top;

[0033] The JFET region 13 is located on the upper layer of the N- epitaxial layer 3;

[0034] The P well 4 is located on the upper layer of the N- epitaxial layer 3 and on both sides of the JFET region 13, the first N+ region 5 i...

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Abstract

The invention relates to a split gate 4H-SiC VDMOS device, and belongs to the technical field of power semiconductors. The device uses a separate gate structure. A Schottky diode is integrated in themiddle of the split gate, and a first N + region for adjusting forward characteristic is additionally arranged. A Schottky contact located above a JFET region provides a current path in the reverse recovery process so as to reduce the reverse storage charge of the body diode and accelerate the reverse recovery process. The additionally arranged first N + region provides a conductive channel for the forward bias of the device so as to reduce the conduction resistance of the device and keep it consistent with that of the traditional device. The 4H-SiC VDMOS structure has better switching characteristics and reverse recovery performance and can ensure that the static characteristics are basically consistent with those of the traditional structure.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, in particular to a split gate 4H-SiC VDMOS device. Background technique [0002] SiC material is a typical representative of the third-generation wide-bandgap semiconductor material. Due to its advantages such as high critical breakdown electric field strength, high carrier saturation drift velocity, and high thermal conductivity, it has become a high-power , high temperature, high frequency, ideal material for radiation resistant devices. [0003] After more than 20 years of rapid development, SiC power devices have achieved impressive results. For example, 600V, 1200V, 1700V, 3300V, and 10kV SiC MOSFET devices have been successfully developed, and 600V, 1200V, and 1700V SiC MOSFET devices have been commercialized. But there is still a lot of room for improvement in power devices made of SiC materials. Taking SiC MOSFET as an example, the gate-to-drain capacitance Cgd of MOSFET af...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/47H01L29/423H01L29/10
CPCH01L29/1095H01L29/42376H01L29/47H01L29/7802H01L29/7803
Inventor 张有润钟炜王帅杨啸杨锐罗佳敏张波
Owner HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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