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Preparation method of nanometer twin crystal silicon dioxide piezoelectric material

A technology of silicon dioxide and piezoelectric materials, which is applied in the field of preparation of nano-twinned silicon dioxide piezoelectric materials, can solve the problems of weak piezoelectricity and small single crystal phase interface area, and achieve high precision of tissue control and high particle size. Grinding efficiency, the effect of facilitating densification and forming

Active Publication Date: 2019-12-10
SHAANXI SCI TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the small quasi-isomorphic phase boundary area of ​​its single crystal, its piezoelectricity is weak

Method used

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  • Preparation method of nanometer twin crystal silicon dioxide piezoelectric material
  • Preparation method of nanometer twin crystal silicon dioxide piezoelectric material

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preparation example Construction

[0020] A kind of preparation method of nano-twin silicon dioxide piezoelectric material of the present invention, comprises the following steps:

[0021] (1) Put 99.9% high-purity silicon dioxide powder with a particle size of 23-35 microns in a high-temperature furnace to melt for 20-30 minutes at 1680-1730°C, and then pour it into a liquid nitrogen cryogenic device for rapid cooling. It is a tank-shaped container. The tank containing high-temperature silica liquid is soaked in flowing low-temperature liquid nitrogen. The flow rate of liquid nitrogen is 140-230 ml / min to obtain multi-crack silica bulk glass material;

[0022] (2) The multi-cracked silica block glass material is crushed and finely ground by a tungsten steel punching and grinding head to obtain glass powder with an average particle size of 43 nanometers. The impact force and impact frequency are 40-55 N and 2-4 Hz, respectively. The spindle speed of the head is 350-450 rpm, and finally a boron powder catalyst o...

Embodiment 1

[0025] (1) Put 99.9% high-purity silicon dioxide powder with a particle size of 23 microns in a high-temperature furnace to melt for 20 minutes at 1680°C, and then pour it into a liquid nitrogen cryogenic device for rapid cooling. The liquid nitrogen cryogenic device is a tank-shaped container , the tank containing the high-temperature silicon dioxide liquid is soaked in flowing low-temperature liquid nitrogen, and the flow rate of the liquid nitrogen is 140 ml / min to obtain a multi-crack silicon dioxide bulk glass material;

[0026] (2) The multi-crack silica bulk glass material is crushed and finely ground by a tungsten steel grinding head to obtain glass powder with an average particle size of 43 nanometers. The impact force and impact frequency are 40 N and 2 Hz, respectively, and the spindle speed of the grinding head is 350 RPM, and finally add 0.02 g / kg glass powder boron powder catalyst and process it in the Octahedron under ultra-high pressure and high temperature, the...

Embodiment 2

[0028] (1) Put 99.9% high-purity silicon dioxide powder with a particle size of 25 microns in a high-temperature furnace and melt it for 22 minutes at 1690°C, then pour it into a liquid nitrogen cryogenic device for rapid cooling. The liquid nitrogen cryogenic device is a tank-shaped container , the tank containing the high-temperature silicon dioxide liquid is soaked in flowing low-temperature liquid nitrogen, the flow rate of liquid nitrogen is 150 ml / min, and a multi-crack silicon dioxide bulk glass material is obtained;

[0029] (2) The multi-cracked silica bulk glass material is crushed and finely ground by a tungsten steel punching and grinding head to obtain glass powder with an average particle size of 43 nanometers. The impact force and impact frequency are 45 N and 3 Hz, respectively, and the spindle speed of the grinding head is 360 RPM, and finally add boron powder catalyst of 0.03 g / kg glass powder and process it in the Octahedron under ultra-high pressure and high...

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Abstract

The invention discloses a preparation method of a nanometer twin crystal silicon dioxide piezoelectric material. High-purity silicon dioxide powder is melted at high temperature and cooled at high speed by liquid nitrogen to obtain a multi-crack silicon dioxide block glass material, then nanometer glass powder is obtained through crushing and fine grinding, and finally the nanometer twin crystal silicon dioxide piezoelectric material is obtained by adding a catalyst and ultra-high pressure and high-temperature treatment. The preparation method is high in organizational control precision and high in process stability and repeatability, and the high performance of silicon dioxide materials can be achieved.

Description

technical field [0001] The invention relates to the technical field of piezoelectric material preparation, in particular to a preparation method of nano-twin silicon dioxide piezoelectric material. Background technique [0002] Silicon dioxide piezoelectric materials have good piezoelectric stability and high mechanical quality factor, and are often used in the production of high-frequency vibrators and ultrasonic transducers. However, due to the small quasi-isomorphic phase boundary area of ​​its single crystal, its piezoelectricity is weak. Therefore, finding a new method to increase the quasi-isomorphic phase boundary area is crucial to improve its piezoelectric performance. [0003] Through high-temperature melting, cryogenic treatment and high-temperature and high-pressure process optimization, the microstructure of silicon dioxide piezoelectric materials is refined, which is the key means to increase its quasi-isomorphic phase boundary area and improve its performance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/14C04B35/626C04B35/653
CPCC04B35/14C04B35/6261C04B35/653C04B2235/36C04B2235/421C04B2235/781C04B2235/96
Inventor 艾桃桃
Owner SHAANXI SCI TECH UNIV