Two-dimensional Zn-Cu-In-S nanosheet and preparation method thereof

A technology of zn-cu-in-s and nanosheets, which is applied in nanotechnology, nano-optics, nanotechnology, etc., can solve the problems of application limitations, easy surface contamination, etc., and achieve the effect of excellent luminous performance and stable structure

Active Publication Date: 2019-12-13
QINGDAO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, they may always be easily in solution, their surface may be more easily contaminated, and most of the elements used in solution synthesis currently contain heavy metal toxic elements, so their applications are limited.

Method used

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  • Two-dimensional Zn-Cu-In-S nanosheet and preparation method thereof
  • Two-dimensional Zn-Cu-In-S nanosheet and preparation method thereof
  • Two-dimensional Zn-Cu-In-S nanosheet and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0048] Put 0.06mmol of indium trichloride tetrahydrate, 3ml of oleylamine and 3ml of octadecene into a three-necked flask, put the high-temperature rotor into the three-necked flask, vacuumize at room temperature for 10min, and start stirring and heating, keeping the heating rate at 5°C / min. When the temperature reaches 100°C, stop heating and turn off the vacuum pump, add nitrogen gas into the three-necked flask, stop heating and cool down to room temperature after the indium source is completely dissolved. At the same time, 0.15 mmol of sulfur source and 3 ml of octadecene were placed in a test tube, and the solution was heated under nitrogen protection. After completely dissolving, it was mixed with the indium source solution, and the mixed solution was heated at a heating rate of 5°C / min. When the temperature of the solution reaches 120° C., the copper precursor solution is added to the mixed solution, and the temperature is lowered after 3 minutes of reaction, and the co...

Embodiment 2

[0051] Put 0.04 mmol of indium trichloride tetrahydrate, 3 ml of oleylamine and 3 ml of octadecene into a three-necked flask, put the high-temperature rotor into the three-necked flask, vacuumize at room temperature for 10 minutes, and start stirring and heating, keeping the heating rate at 5°C / min. When the temperature reaches 100°C, stop heating and turn off the vacuum pump, add nitrogen gas into the three-necked flask, stop heating and cool down to room temperature after the indium source is completely dissolved. At the same time, 0.15 mmol of sulfur source and 3 ml of octadecene were placed in a test tube, and the solution was heated under nitrogen protection. After completely dissolving, it was mixed with the indium source solution, and the mixed solution was heated at a heating rate of 5°C / min. When the temperature of the solution reaches 120° C., the copper precursor solution is added to the mixed solution, and the temperature is lowered after 3 minutes of reaction, an...

Embodiment 3

[0054] Put 0.02mmol of indium trichloride tetrahydrate, 3ml of oleylamine and 3ml of octadecene into a three-necked flask, put the high-temperature rotor into the three-necked flask, vacuumize at room temperature for 10min, and start stirring and heating, keeping the heating rate at 5°C / min. When the temperature reaches 100°C, stop heating and turn off the vacuum pump, add nitrogen gas into the three-necked flask, stop heating and cool down to room temperature after the indium source is completely dissolved. At the same time, 0.15 mmol of sulfur source and 3 ml of octadecene were placed in a test tube, and the solution was heated under nitrogen protection. After completely dissolving, it was mixed with the indium source solution, and the mixed solution was heated at a heating rate of 5°C / min. When the temperature of the solution reaches 120° C., the copper precursor solution is added to the mixed solution, and the temperature is lowered after 3 minutes of reaction, and the co...

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Abstract

The invention discloses a two-dimensional Zn-Cu-In-S nanosheet and a preparation method thereof. The nanosheet is composed of Cu, In, Zn and S. The preparation method mainly comprises the following steps: dissolving an indium source in a solvent and a ligand, and adding a dissolved sulfur source mixed solution after the indium source is completely dissolved, heating the obtained solution to a certain temperature, adding a completely dissolved copper source mixed solution, cooling the obtained solution, adding a zinc source mixed solution, heating the obtained solution to a final reaction temperature, carrying out a reaction for a period of time, cooling and centrifuging the obtained solution, and washing the obtained reaction product to obtain the Cu-In-Zn-S nanosheet material. The Cu-In-Zn-S nanosheet prepared in the invention has the characteristics of simple preparation and synthesis process, high efficiency and good performance stability. Toxic heavy metal salts are not used in thesynthesis process, so that the method is safe and environmentally friendly, and is suitable for large-scale promotion and application.

Description

technical field [0001] The invention belongs to the technical field of new nanometer materials, and relates to a two-dimensional Zn-Cu-In-S nanosheet and a preparation method thereof. Background technique [0002] Two-dimensional semiconductor crystals are one of the key components of modern microelectronics and optoelectronics, whose thickness is much smaller than the lateral dimension. The thickness of these two-dimensional structures can range from a few micrometers to a few layers of atoms, and the lateral dimensions can reach several centimeters. Among these structures, ultrathin structures known as quantum sheets were studied as early as the 1970s, which gave a major impetus to the development of new types of devices such as Bloch oscillators or quantum sheet lasers. With the newly developed technique, molecular beam epitaxy, after semiconductors can be grown, research on ultrathin semiconductor layers has exploded at an explosive rate, and various industrial applicat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/62B82Y20/00B82Y40/00
CPCC09K11/623B82Y20/00B82Y40/00Y02P70/50
Inventor 唐建国杨兰兰高梵韩董妮袁泽胡中艺杜中林王瑶
Owner QINGDAO UNIV
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