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Preparation method of a two-dimensional tungsten sulfide-based vertical heterostructure material

A heterogeneous structure, tungsten sulfide technology, applied in metal material coating process, vacuum evaporation plating, coating, etc.

Active Publication Date: 2022-01-11
HANGZHOU DIANZI UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the use of one-step chemical vapor deposition to prepare two-dimensional tungsten sulfide-based heterostructures, especially vertical heterostructures with a single layer of tungsten sulfide as the top layer and a single layer of molybdenum tungsten sulfide alloy as the bottom layer, has not yet been reported.

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  • Preparation method of a two-dimensional tungsten sulfide-based vertical heterostructure material
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  • Preparation method of a two-dimensional tungsten sulfide-based vertical heterostructure material

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Embodiment 1

[0056] A WS 2 Two-dimensional vertical heterostructure based on Si / SiO 2 In order to deposit the substrate, the Mo / W film by magnetron sputtering is prepared by reacting Mo and W sources with sulfur source S powder. Its preparation is carried out in a double-temperature zone horizontal tube furnace, and the schematic diagram of the device is shown in figure 1 Shown, specifically comprise following preparation steps:

[0057] (1) Select Si / SiO that does not contain catalyst and seed layer 2 Substrate, the size of the substrate is 1cm×2.5cm, Si / SiO 2 The substrate is immersed in acetone solution for 10-15 minutes, then ultrasonically cleaned in ethanol solution for 10-15 minutes, then rinsed with deionized water for 3-5 times, then dried with high-purity nitrogen, and finally placed in an oven at 100°C Keep warm for 1 hour and dry for later use;

[0058] (2) if figure 1 As shown in the left figure, first in Si / SiO 2 Magnetron sputtering Mo film on one end of the substrate...

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Abstract

The invention belongs to the technical field of nanomaterial preparation, and discloses a preparation method of a two-dimensional tungsten sulfide-based vertical heterostructure material. 2 As the substrate, the Mo / W film by magnetron sputtering is the source of Mo and W, which reacts with sulfur vapor to prepare WS in three different regions near the Mo / W film. 2 base vertical heterostructure. Earned WS 2 The morphology of the base vertical heterostructure is a triangle formed by stacking two crystals of different sizes, which can be used as a channel material for transistors in the field of ultra-thin electronic devices. The present invention selects the Mo / W ultra-thin film by magnetron sputtering as the Mo and W source, through the difference of Mo and W source evaporation temperature and the difference of effective evaporation area, and the concentration distribution of Mo and W source which changes with time and distance , the successful realization of two-dimensional WS 2 Component modulation of base vertical heterostructures. WS 2 The base vertical heterostructures have tunable emission wavelengths and have potential applications in photodetection devices.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a preparation method of different two-dimensional tungsten sulfide-based vertical heterostructures. Background technique [0002] Since the discovery of graphene in 2004, various ultrathin two-dimensional materials, such as boron nitride (BN), transition metal dichalcogenides (TMDs), black phosphorus, etc., have been extensively studied mainly due to their excellent optical and The electrical characteristics make them have bright application prospects in fields such as field effect transistors, photodetectors, light emitting diodes, and energy. Compared with bulk materials, single-layer two-dimensional TMDs represented by molybdenum disulfide and tungsten disulfide have very unique optical and electrical properties, such as layer-dependent indirect-direct bandgap transition, tunable bandgap, high Excellent light emission efficiency, high exciton binding ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/18C23C14/35C23C14/58
CPCC23C14/352C23C14/165C23C14/185C23C14/5866
Inventor 陈飞苏伟涛
Owner HANGZHOU DIANZI UNIV
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