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GAN HEMT device in which source, drain, and gate are prepared synchronously and method

A gate and source technology, applied in the field of GaNHEMT devices, can solve problems such as complex processing steps and dimensional errors, and achieve the effect of precise dimensional control and simple operation steps

Pending Publication Date: 2019-12-13
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many disadvantages in the secondary lithography, not only the gate mask and the source-drain mask need to be designed separately, the processing steps are complicated, but also the alignment step before the secondary lithography will introduce dimensional errors. source distance is particularly prominent when GaN HEMT devices

Method used

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  • GAN HEMT device in which source, drain, and gate are prepared synchronously and method
  • GAN HEMT device in which source, drain, and gate are prepared synchronously and method

Examples

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Embodiment 1

[0039] This embodiment provides a GaN HEMT device with source, drain and gate synchronously prepared, such as figure 2 As shown, it includes a substrate 9, a buffer layer 8, a GaN channel layer 7 and an AlGaN barrier layer 6 distributed sequentially from bottom to top, and the two ends of the upper surface of the AlGaN barrier layer 6 are connected to the source 1 and the drain 2 An insulating layer 5 is distributed on the upper surface of the AlGaN barrier layer 6 between the source 1 and the drain 2, the upper surface of the insulating layer 5 is connected to the gate 3, the source 1 and the drain 2 are connected to the GaN channel layer 7 Ohmic contacts are formed respectively, and the heights of the source 1 and the drain 2 are equal and higher than the height of the gate 3 .

[0040] The source 1, the drain 2 and the gate 3 are all cuboids; the size of the source 1 is the same as that of the drain 2, the height is 750 nm, the length is 5 μm, and the width is 5 μm; the he...

Embodiment 2

[0057] This embodiment provides a GaN HEMT device with source, drain and gate synchronously prepared, such as figure 2 As shown, it includes a substrate 9, a buffer layer 8, a GaN channel layer 7 and an AlGaN barrier layer 6 distributed sequentially from bottom to top, and the two ends of the upper surface of the AlGaN barrier layer 6 are connected to the source 1 and the drain 2 An insulating layer 5 is distributed on the upper surface of the AlGaN barrier layer 6 between the source 1 and the drain 2, the upper surface of the insulating layer 5 is connected to the gate 3, the source 1 and the drain 2 are connected to the GaN channel layer 7 Ohmic contacts are formed respectively, and the heights of the source 1 and the drain 2 are equal and higher than the height of the gate 3 .

[0058] The source 1, the drain 2 and the gate 3 are all cuboids; the size of the source 1 is the same as that of the drain 2, the height is 1200 nm, the length is 8 μm, and the width is 8 μm; the h...

Embodiment 3

[0076] This embodiment provides a GaN HEMT device with source, drain and gate synchronously prepared, such as figure 2 As shown, it includes a substrate 9, a buffer layer 8, a GaN channel layer 7 and an AlGaN barrier layer 6 distributed sequentially from bottom to top, and the two ends of the upper surface of the AlGaN barrier layer 6 are connected to the source 1 and the drain 2 An insulating layer 5 is distributed on the upper surface of the AlGaN barrier layer 6 between the source 1 and the drain 2, the upper surface of the insulating layer 5 is connected to the gate 3, the source 1 and the drain 2 are connected to the GaN channel layer 7 Ohmic contacts are formed respectively, and the heights of the source 1 and the drain 2 are equal and higher than the height of the gate 3 .

[0077] The source 1, the drain 2 and the gate 3 are all cuboids; the size of the source 1 is the same as that of the drain 2, the height is 1500 nm, the length is 10 μm, and the width is 10 μm; the...

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Abstract

The invention discloses a GAN HEMT device in which a source, a drain, and a gate are prepared synchronously and a method. The device includes a substrate, a buffer layer, a channel layer, and a barrier layer which are successively distributed from bottom to top. The two ends of the upper surface of the barrier layer are connected to the source and the drain. An insulating layer is distributed on the upper surface of the barrier layer between the source and the drain. The upper surface of the insulating layer is connected to the gate. The source and the drain are each in ohmic contact with thechannel layer, and have heights equal to each other but higher than that of the gate. The preparation method provided by the present invention overcomes the shortcoming that the source-drain and the gate are required to be prepared in two steps in the prior art, does not have the light diffraction effect of the traditional photolithography technology, can quickly produce a micro-nano pattern withhigh dimensional accuracy, does not require alignment and secondary photolithography steps, can achieve very accurate size control, achieves a line width of the device as low as 50 [mu]m, has simple operation steps, and is suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a GaN HEMT device and a method for synchronously preparing a source, a drain and a gate. Background technique [0002] In recent years, wide bandgap semiconductors represented by Group III nitrides such as GaN have received widespread attention and vigorous development. GaN high electron mobility transistor (HEMT) based on AlGaN / GaN heterojunction has shown unparalleled advantages in high temperature resistance, radiation resistance, high voltage, high power, high frequency, etc., and has been used in power electronics and microwave radio frequency The field has been practically applied, and the future development space is extremely broad. [0003] Currently, GaN HEMT devices are mainly fabricated by photolithography. GaN HEMTs with a gate width of more than 1 μm are prepared using a 365 nm wavelength ultraviolet lithography process, and GaN HEMTs with a gate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/335G03F7/00
CPCH01L29/7786H01L29/66462G03F7/0002
Inventor 李国强阙显沣王文樑姚书南
Owner SOUTH CHINA UNIV OF TECH