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Deep ultraviolet LED with chirped superlattice ultimate barrier structure and its preparation method

A final barrier and superlattice technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low efficiency of deep ultraviolet LEDs, achieve the effects of weakening the overflow effect of electrons, reducing probability, and improving luminous efficiency

Active Publication Date: 2021-11-26
SUZHOU UVCANTEK CO LTD
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Problems solved by technology

[0005] The purpose of the present invention is to provide a deep ultraviolet LED with a chirped superlattice final barrier structure and its preparation method, which is used to solve the problem of low efficiency of deep ultraviolet LED due to electron overflow effect in the prior art

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  • Deep ultraviolet LED with chirped superlattice ultimate barrier structure and its preparation method

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Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] For the first solution proposed in this invention, see figure 1 , figure 1It is a structural schematic diagram of an embodiment of a deep ultraviolet LED with a chirped superlattice final barrier structure in the present invention. The deep ultraviolet LED with chirped superlattice final barrier structure in the present invention includes sapphire substrate 1, AlN intrinsic layer 2, N-type AlGaN layer 3, current spreading layer 4, quantum well active l...

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Abstract

The invention discloses a deep ultraviolet LED with a chirped superlattice final barrier structure and a preparation method thereof. The deep ultraviolet LED comprises a sapphire substrate, an AlN intrinsic layer, an N-type AlGaN layer, a current spreading layer, and a quantum well active layer. Source layer, chirped superlattice final barrier layer, electron blocking layer, P-type AlGaN injection layer and P-type GaN contact layer; said chirped superlattice final barrier layer is thickness chirped and consists of several Al a Ga 1‑a N layer and some Al b Ga 1‑b A superlattice structure consisting of alternating periodic N layers. The invention reduces the probability of electron tunneling to the P-type AlGaN injection layer by introducing the final barrier layer of the chirped superlattice, weakens the electron overflow effect, and thus improves the luminous efficiency of the deep ultraviolet LED.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a deep ultraviolet LED with a final potential barrier structure of a chirped superlattice and a preparation method thereof. Background technique [0002] As an outstanding representative of wide bandgap semiconductor materials, group III nitrides have realized high-efficiency blue-green light-emitting diodes (full name light-emitting diodes, referred to as LEDs), lasers and other solid-state light source devices, which are used in flat panel displays, white lighting, etc. The application has been a great success. In the past ten years, people expect to apply this high-efficiency luminescent material to the ultraviolet band to meet the increasing demand for ultraviolet light sources. According to its biological effects, the ultraviolet band can usually be divided into: long-wave ultraviolet (i.e. UVA, wavelength 320-400nm), medium-wave ultraviolet (i.e. UVB, wavelengt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/14H01L33/32H01L33/00
CPCH01L33/06H01L33/325H01L33/007H01L33/145H01L33/32H01L33/14
Inventor 张骏梁仁瓅戴江南陈长清
Owner SUZHOU UVCANTEK CO LTD
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