Nested three-dimensional trench electrode silicon detector

A grooved electrode and nested technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of inconvenient adjustment of the size of the detector unit structure, limited practicability, limited sensitivity, etc., and achieve particle absorption performance And the effect of sensitivity improvement, wide application, and reduction of dead zone area

Active Publication Date: 2019-12-24
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to achieve the above object, the present invention provides a nested three-dimensional grooved electrode silicon detector, which solves the problem of the large dead zone, limited sens

Method used

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  • Nested three-dimensional trench electrode silicon detector
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  • Nested three-dimensional trench electrode silicon detector

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Nested 3D trench electrode silicon detectors, such as Figure 2-4 As shown, the bottom layer is a silicon dioxide protective layer 5, and the thickness of the silicon dioxide protective layer 5 is 1 μm; a peripheral electrode 1 is arranged on the silicon dioxide protective layer 5, and a height of 30 μm is embedded in the peripheral electrode 1. The nested part 3, the nested part 3 is composed of a p-type silicon substrate 6 located on the upper surface of the silicon dioxide layer 5 and an n-type heavily doped phosphorus silicon layer and a p-type lightly doped borosilicate layer located on the upper surface of the p-type silicon substrate 6 layer; the height of the p-type silicon substrate 6 is 10 μm, the length and width of the p-type silicon substrate 6 are equal to the outer length and outer width of the peripheral electrode 1, and the height of the n-type heavily doped phosphorus silicon layer and the p-type lightly doped borosilicate layer The center electrode 2 ...

Embodiment 2

[0027] Nested 3D trench electrode silicon detectors, such as Figure 2-4As shown, the bottom layer is a silicon dioxide protective layer 5, and the thickness of the silicon dioxide protective layer 5 is 1 μm; a peripheral electrode 1 is arranged on the silicon dioxide protective layer 5, and a height of 30 μm is embedded in the peripheral electrode 1. The nested part 3, the nested part 3 is composed of a p-type silicon substrate 6 located on the upper surface of the silicon dioxide layer 5 and an n-type heavily doped phosphorus silicon layer and a p-type lightly doped borosilicate layer located on the upper surface of the p-type silicon substrate 6 layer; the height of the p-type silicon substrate 6 is 20 μm, the length and width of the p-type silicon substrate 6 are equal to the outer length and outer width of the peripheral electrode 1, and the height of the n-type heavily doped phosphorus silicon layer and the p-type lightly doped borosilicate layer The center electrode 2 i...

Embodiment 3

[0029] Nested 3D trench electrode silicon detectors, such as figure 1 As shown, the bottom layer is a silicon dioxide protective layer 5, and the thickness of the silicon dioxide protective layer 5 is 1 μm; on the silicon dioxide protective layer 5, a hollow cylinder nesting part 3 with equal length and a rectangular parallelepiped peripheral electrode are arranged. 1; the nested part 3 is composed of a p-type silicon substrate 6 located on the silicon dioxide protective layer 5 and an n-type heavily doped phosphorus silicon layer and a p-type lightly doped borosilicate layer located on the p-type silicon substrate 6; The height of the sleeve part 3 is 30 μm, the height of the p-type silicon substrate 6 is 25 μm, the length and width of the p-type silicon substrate 6 are equal to the outer length and outer width of the peripheral electrode 1, and the n-type heavily doped phosphorus silicon layer and the p-type lightly doped The height of the borosilicate layer is 5 μm; the cen...

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Abstract

The invention discloses a nested three-dimensional trench electrode silicon detector which comprises a silicon dioxide protective layer with the thickness of 1 micron. A peripheral electrode is arranged on the silicon dioxide protective layer. The peripheral electrode is in a hollow cuboid structure from top to bottom. A nested portion and a center electrode are embedded in the peripheral electrode. The nested portion is composed of a p-type silicon substrate on the upper surface of the silicon dioxide layer, an n-type heavily doped phosphorus silicon layer and a p-type light doped borosilicate layer, wherein the n-type heavily doped phosphorus silicon layer and the p-type light doped borosilicate layer are located on the p-type silicon substrate. The bottom of the center electrode penetrates the nested portion and is connected with the silicon dioxide protective layer. An isolation silicon body is arranged between the peripheral electrode and the center electrode. The tops of the peripheral electrode, the center electrode and the isolation silicon body are located in the same plane, and an electrode contact layer is arranged on the tops of the three. The electrode contact layer iscomposed of an aluminum skin connected with the peripheral electrode and the center electrode and silicon dioxide connected with the isolation silicon body. Electrode contact ports are arranged on the aluminum skin, which is connected with the peripheral electrode and the center electrode, of the electrode contact layer. The practicality of the detector is greatly enhanced.

Description

technical field [0001] The invention belongs to the technical field of high-energy physics and astrophysics, and relates to a nested three-dimensional groove electrode silicon detector. Background technique [0002] Detectors are widely used in high-energy physics, astrophysics, aerospace, military, medical and other technical fields. In high-energy physics and astrophysics applications, the working environment of detectors is under strong irradiation conditions, so there are strict requirements for detectors , the specific requirements are reflected in the need for strong radiation resistance, moderate leakage current and full depletion voltage, and appropriate size. The traditional three-dimensional trench electrode silicon detector has many shortcomings: First, when the traditional three-dimensional trench electrode silicon detector electrode is etched, it cannot completely penetrate the entire silicon body, and a weak electric field appears in the unetched part , no ele...

Claims

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Application Information

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IPC IPC(8): H01L31/10H01L31/028H01L31/0352H01L31/0224H01L31/02H01L31/18
CPCH01L31/02H01L31/0224H01L31/028H01L31/0352H01L31/10H01L31/1804Y02P70/50
Inventor 李正刘美萍张亚王明洋
Owner XIANGTAN UNIV
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