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High-water-resistance flexible internal-series-connection CIGS solar cell and preparation method thereof

A solar cell and water-blocking technology, which is applied in the field of flexible CIGS solar cells, can solve problems such as expensive process costs, performance degradation of battery devices, and limitations on the scope of application of flexible CIGS solar cells.

Pending Publication Date: 2019-09-20
绵阳皓华光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the complex preparation process and high cost of the excellent packaging water-blocking and oxygen-blocking adhesive film, and the size specifications need to be customized in conjunction with the size of the battery device itself, the limitations of purchasing the water-blocking packaging film are relatively large, which is not conducive to flexible CIGS batteries. Component cost reduction
Traditional flexible CIGS solar cell sub-cells are connected in series using an external series circuit. Damage to the series connection will directly lead to performance degradation or even failure of the battery device, so it is difficult to cut different shapes and sizes according to customer needs
The product size cannot be customized at will, which greatly limits the scope of application of flexible CIGS solar cells

Method used

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  • High-water-resistance flexible internal-series-connection CIGS solar cell and preparation method thereof
  • High-water-resistance flexible internal-series-connection CIGS solar cell and preparation method thereof
  • High-water-resistance flexible internal-series-connection CIGS solar cell and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Step 1. Prepare the back protective layer of the flexible substrate: prepare an 800nm ​​thick back protective layer on the back of the flexible substrate with a thickness of 70um to prevent the selenium vapor from corroding the flexible substrate during the preparation of the CIGS absorber layer; the target used in the preparation is Molybdenum target, Ar is introduced during the preparation process, and the background vacuum degree during sputtering is less than or equal to 5.0×10 ﹣3 Pa, the sputtering power is 3kW, the working pressure is 2Pa, the flexible substrate temperature is 200°C, the sputtering time is 5min, and the Ar flow rate is 90sccm;

[0064] Step 2. Preparation of organic-inorganic alternating multi-layer composite water-blocking insulating layer: 1000nm aluminum nitride high-density insulating inorganic water-blocking film is prepared on a flexible stainless steel substrate with a thickness of 100um by reactive magnetron sputtering method, and the sputt...

Embodiment 2

[0075] Step 1. Prepare the back protective layer of the flexible substrate: prepare a 1800nm ​​thick back protective layer on the back of the flexible substrate with a thickness of 100um to prevent the selenium vapor from corroding the flexible substrate during the preparation of the CIGS absorber layer; the target used in the preparation is Molybdenum target, Ar is introduced during the preparation process, and the background vacuum degree during sputtering is less than or equal to 5.0×10 ﹣3 Pa, the sputtering power is 5kW, the working pressure is 5Pa, the flexible substrate temperature is 300°C, the sputtering time is 10min, and the Ar flow rate is 150sccm;

[0076] Step 2. Preparation of organic-inorganic alternating multi-layer composite water-blocking insulating layer: 1200nm aluminum nitride high-density insulating inorganic water-blocking film is prepared on flexible polyimide with a thickness of 150um by reactive magnetron sputtering method, and the sputtering target ma...

Embodiment 3

[0087] Step 1. Prepare the back protective layer of the flexible substrate: prepare a 2000nm thick back protective layer on the back of the flexible substrate with a thickness of 150um to prevent the selenium vapor from corroding the flexible substrate during the preparation of the CIGS absorber layer; the target used in the preparation is Molybdenum target, Ar is introduced during the preparation process, and the background vacuum degree during sputtering is less than or equal to 5.0×10 ﹣3 Pa, the sputtering power is 10kW, the working pressure is 10Pa, the flexible substrate temperature is 400°C, the sputtering time is 20min, and the Ar flow rate is 200sccm;

[0088] Step 2. Preparation of organic-inorganic alternating multi-layer composite water-blocking insulating layer: 1400nm aluminum nitride high-density insulating inorganic water-blocking film is prepared on flexible polyimide with a thickness of 70um by reactive magnetron sputtering method, and the sputtering target mat...

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Abstract

The invention discloses a high-water-resistance flexible internal-series-connection CIGS solar cell and a preparation method thereof. The high-water-resistance flexible internal-series-connection CIGS solar cell comprises a flexible substrate; a back protection layer for preventing selenium steam from corroding the flexible substrate; an internal-series-connection CIGS solar cell assembly; an organic-inorganic-alternate multilayer composite water-resistant insulation layer, which is prepared on the bottom portion of the internal-series-connection CIGS solar cell assembly, and comprises a high-density insulation inorganic water-resistant film, an organic acrylate layer I and an inorganic water-resistant film; and an organic-inorganic-alternate multilayer composite water-resistant insulation anti-reflection layer, which is prepared on the top portion of the internal-series-connection CIGS solar cell assembly ,and comprises a high-density high-resistance inorganic water-resistant anti-reflection film, an organic acrylate layer II and an inorganic water-resistant anti-reflection film. The high-water-resistance flexible internal-series-connection CIGS solar cell and the preparation method thereof realize formation of an internal-series-connection cell chip and meanwhile, finish water-resistant oxygen-resistant light-receiving surface anti-reflection package of the device; and the water-resistant oxygen-resistant package film can be deposited in a large area on the same production line with a cell device, thereby reducing water-resistant oxygen-resistant package process difficulty of the flexible cell, and facilitating large-area commercial production.

Description

technical field [0001] The invention belongs to the technical field of flexible CIGS solar cells, and more specifically, the invention relates to a flexible inline CIGS solar cell with high resistance to water. Background technique [0002] Copper, indium, gallium, selenium, zinc and other elements in copper indium gallium selenide thin-film solar cell devices are relatively active, and are prone to chemical reactions with water and vapor when exposed to the atmosphere, making CIGS cell devices invalid and affecting the life of the device itself. Therefore, it is necessary to effectively package the CIGS solar cell device, separate the functional layers of the CIGS solar cell device from the atmosphere, and prolong the life of the battery device. The traditional encapsulation solution is to use a pre-made encapsulation film to attach to the device after the CIGS solar cell device is manufactured to realize the isolation encapsulation from the atmosphere. Due to the complex ...

Claims

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Application Information

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IPC IPC(8): H01L31/048H01L31/05H01L31/0224H01L31/0216H01L31/18
CPCH01L31/0481H01L31/02168H01L31/022433H01L31/0508H01L31/186Y02E10/50Y02P70/50
Inventor 陈培专陈亚栋李劼魏昌华高翔
Owner 绵阳皓华光电科技有限公司
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