A Resonant Cavity Based Lateral Current Confinement High Efficiency Light Emitting Diode

Abstract

The invention discloses a resonant cavity-based lateral current limiting high-efficiency light-emitting diode and belongs to the field of semiconductor electronics. The resonant cavity-based lateral current limiting high-efficiency light-emitting diode comprises an upper electrode, an upper Bragg reflector, a resonant cavity, a lower Bragg reflector, a substrate and a lower electrode which are distributed sequentially from top to bottom; the upper electrode consists of an upper pressure welding electrode and an upper current expanding electrode; low-refractive-index material layers and high-refractive-index material layers which are arranged alternately are adopted to form the upper Bragg reflector and the lower Bragg reflector separately; an upper DBR oxidizable material layer is arrangedat the bottom of each of the upper Bragg reflector and the lower Bragg reflector; an active region is located in the middle of the resonant cavity; and a lower DBR oxidizable material layer is arranged at the top of the active region. The diode further comprises an upper expansion electrode lateral oxide layer, a lower expansion electrode lateral oxide layer, an upper pressure welding electrode lateral oxide layer, a lower pressure welding electrode lateral oxide layer, an expansion electrode lateral oxide layer, an extension electrode dielectric layer and a pressure welding electrode dielectric layer. According to the diode of the invention, the lateral oxide layers are used for limiting the transverse flow of current, so that carriers are prevented from being injected into the active region under the top electrode; the resonant cavity structure in a vertical direction is used in combination; and therefore, the light emitting diode has the advantages of high efficiency, good thermalperformance and stable radiation wavelength.

Description

Technical field [0001] The invention relates to a Resonant Cavity Light Emitting Diode (RCLED), in particular to a high-efficiency light-emitting diode with lateral current limitation based on a resonant cavity, and belongs to the technical field of semiconductor electronics. Background technique [0002] At present, as a new type of light source, light-emitting diodes have a huge market in the fields of automobile taillights, lighting displays, and optical fiber communications. The luminous intensity of the LED is determined by the luminous efficiency, and the luminous efficiency is determined by the internal quantum efficiency and the external quantum extraction efficiency. The internal quantum efficiency can be increased to 90% or even close to 100% due to the advancement of various epitaxial technologies and control technologies, while the external quantum extraction efficiency is still low due to the influence of electrode absorption and total internal reflection. In the ea...

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Problems solved by technology

The reasons for its low external quantum efficiency are as follows: firstly, when the current passes through the upper electrode (100), the current is mainly concentrated in a part of the area below the electrode, and because the reflectivity of the upper Bragg reflector (200) is low, the total The thickness is small, and the current injected from the upper electrode reaches the active area and undergoes radiative recombination without time to expand, so the light-emitting area is mainly concentrated in the active area below the upper electrode; secondly, the light emitted from the active area under the electrode It will be blocked or absorbed by the electrodes and cannot be extracted to the outside of the device, which will not only generate Joule heat, but also reduce the light extraction rate

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