The invention discloses a
resonant cavity-based lateral
current limiting high-efficiency light-emitting
diode and belongs to the field of
semiconductor electronics. The
resonant cavity-based lateral
current limiting high-efficiency light-emitting
diode comprises an upper
electrode, an upper Bragg reflector, a
resonant cavity, a lower Bragg reflector, a substrate and a lower
electrode which are distributed sequentially from top to bottom; the upper
electrode consists of an upper pressure
welding electrode and an upper current expanding electrode; low-refractive-index material
layers and high-refractive-index material
layers which are arranged alternately are adopted to form the upper Bragg reflector and the lower Bragg reflector separately; an upper DBR oxidizable material layer is arrangedat the bottom of each of the upper Bragg reflector and the lower Bragg reflector; an active region is located in the middle of the resonant cavity; and a lower DBR oxidizable material layer is arranged at the top of the active region. The
diode further comprises an upper expansion electrode lateral
oxide layer, a lower expansion electrode lateral
oxide layer, an upper pressure
welding electrode lateral
oxide layer, a lower pressure
welding electrode lateral oxide layer, an expansion electrode lateral oxide layer, an extension electrode
dielectric layer and a pressure welding electrode
dielectric layer. According to the diode of the invention, the lateral oxide
layers are used for limiting the transverse flow of current, so that carriers are prevented from being injected into the active region under the top electrode; the resonant cavity structure in a vertical direction is used in combination; and therefore, the
light emitting diode has the advantages of high efficiency, good thermalperformance and stable
radiation wavelength.