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A method for improving heat dissipation efficiency of semiconductor laser chip

A chip heat dissipation and laser technology, applied in the laser field, can solve the problems of poor heat dissipation efficiency, achieve the effects of reducing production costs, reducing thermal resistance, and improving optical power output

Active Publication Date: 2017-05-24
马鞍山思派科创科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention proposes a method for improving the heat dissipation efficiency of semiconductor laser chips, which solves the problem of poor heat dissipation efficiency of laser chips in the prior art

Method used

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  • A method for improving heat dissipation efficiency of semiconductor laser chip
  • A method for improving heat dissipation efficiency of semiconductor laser chip
  • A method for improving heat dissipation efficiency of semiconductor laser chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Such as Figure 1-5 Shown, a kind of manufacturing method of semiconductor laser chip of the present invention comprises the following steps:

[0028] a) Growth substrate 1 epitaxially grows preset conversion layer 5 , N-region epitaxial layer 2 , active region 3 and P-region epitaxial layer 4 in sequence;

[0029] b) Fabricate the P-side electrode 6 on the P-region epitaxial layer 4 through photolithography, etching, evaporation of TiPtAu and annealing;

[0030] c) immersing the obtained product in step b) into the corrosion solution, and using the corrosion solution to corrode the preset conversion layer 5;

[0031] d) After the surface treatment step of the N-region epitaxial layer 2 obtained in step c), AuGeNi is evaporated to prepare the N-face electrode 8 .

[0032] The P-face electrode 6 and the N-face electrode 8 respectively form a P-face heat dissipation structure 7 and an N-face heat dissipation structure 9 .

[0033] The P-region epitaxial layer 4 include...

Embodiment 2

[0039] Such as Figure 1-5 Shown, a kind of manufacturing method of semiconductor laser chip of the present invention comprises the following steps:

[0040] a) Growth substrate 1 epitaxially grows preset conversion layer 5 , N-region epitaxial layer 2 , active region 3 and P-region epitaxial layer 4 in sequence;

[0041] b) Fabricate the P-side electrode 6 on the P-region epitaxial layer 4 through photolithography, etching, evaporation of TiPtAu and annealing;

[0042] c) immersing the obtained product in step b) into the corrosion solution, and using the corrosion solution to corrode the preset conversion layer 5;

[0043] d) After the surface treatment step of the N-region epitaxial layer 2 obtained in step c), AuGeNi is evaporated to prepare the N-face electrode 8 .

[0044] The P-face electrode 6 and the N-face electrode 8 respectively form a P-face heat dissipation structure 7 and an N-face heat dissipation structure 9 .

[0045] The N-surface heat dissipation structu...

Embodiment 3

[0053] Such as Figure 1-5 Shown, a kind of manufacturing method of semiconductor laser chip of the present invention comprises the following steps:

[0054] a) Growth substrate 1 epitaxially grows preset conversion layer 5 , N-region epitaxial layer 2 , active region 3 and P-region epitaxial layer 4 in sequence;

[0055] b) Fabricate the P-side electrode 6 on the P-region epitaxial layer 4 through photolithography, etching, evaporation of TiPtAu and annealing;

[0056] c) immersing the obtained product in step b) into the corrosion solution, and using the corrosion solution to corrode the preset conversion layer 5;

[0057] d) After the surface treatment step of the N-region epitaxial layer 2 obtained in step c), AuGeNi is evaporated to prepare the N-face electrode 8 .

[0058] The P-face electrode 6 and the N-face electrode 8 respectively form a P-face heat dissipation structure 7 and an N-face heat dissipation structure 9 .

[0059] The N-surface heat dissipation structu...

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Abstract

The invention provides a method of improving the cooling effect of a semiconductor laser chip. The method comprises the following steps: a) epitaxially growing a preset conversion layer, an N-zone epitaxial layer, an active area and a P-zone epitaxial layer on a growing substrate sequentially; b) preparing a P-surface electrode on the P-zone epitaxial layer by photoetching, etching, evaporating TiPtAu (Titanium-Platinum-Copper) and annealing; c) immersing the P-surface electrode into corrosive liquid, and using the corrosive liquid to corrode the preset conversion layer; and d) after the N-zone epitaxial layer obtained in the step c) is subjected to the surface treatment step, evaporating AuGeNi (Copper-Germanium-Nickel) to obtain an N-surface electrode. The semiconductor laser chip with large power provided by the invention can perform double-faced cooling, so that thermal resistance can be greatly reduced; and the optical power output of devices can be improved to a large extent, so that the semiconductor laser chip has significant technical advancement and good economic benefit.

Description

technical field [0001] The invention relates to the field of lasers, in particular to a method for improving heat dissipation efficiency of a semiconductor laser chip. Background technique [0002] The preparation process of the existing semiconductor laser chip is as follows: 1) Use gallium arsenide or indium phosphide substrate as the base material for chip growth (i.e. the growth substrate), and epitaxially grow the total thickness on the growth substrate by methods such as MOCVD or MBE A laser epitaxial wafer is formed for a fine chip of several microns; 2) The front electrode structure is obtained by evaporation, sputtering, photolithography and other processes on the front of the epitaxial wafer; 3) The substrate is thinned to about 100 microns by grinding Finally, the back electrode material is prepared; 4) By slicing, the natural cleavage surface of the semiconductor material is used to form the light-emitting end surface, and the anti-reflection coating and the anti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/042
Inventor 廉鹏
Owner 马鞍山思派科创科技有限公司
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