Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises steps: a substrate is provided, wherein the types of the device regions comprise one or twoof an NMOS region and a PMOS region, and the same type of the device regions is used for forming devices with different threshold voltages; a gate structure is formed on the substrate; and source-drain doping layers are formed in the substrate at two sides of the gate structure, and in the same type of device regions, the source-drain doping layers corresponding to different threshold voltages have different doping ion concentrations. By adjusting the doping ion concentration of each source-drain doping layer in the same type of device regions, the threshold voltage of each device is easy toadjust respectively, the adverse effect of the process of forming a work function layer on the performance and yield of the device can be reduced, and the cross influence of the threshold voltage adjustment of any device on other devices is avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] A Complementary Metal-Oxide Semiconductor (CMOS) device is one of the basic semiconductor devices constituting an integrated circuit. With the rapid development of integrated circuit manufacturing technology, the feature size of CMOS devices is always shrinking according to a certain ratio. It is a trend in the development of integrated circuits to replace the traditional oxide material gate dielectric layer with high-k material gate dielectric layer. . However, there are still many problems to be solved when forming a metal gate on a high-k gate dielectric layer, one of which is the matching of work function. Because the work function will directly affect the threshold voltage (Threshold Voltage, Vt) and device performance of the device, the work function must be adjusted to a suita...

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Problems solved by technology

[0004] However, the current process of adjusting the threshold voltage is relatively difficult, and the adjustment of the threshold voltage may easily lead to a decline in device performance and yield.

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