Preparation method of perovskite single crystals

A technology of perovskite and perovskite precursors, which is applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of component control that cannot be single crystal, and achieve low cost and no danger of raw materials. The effect of convenience and convenience of raw material supply

Active Publication Date: 2020-01-17
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the composition of the final single crystal cannot be controlled during the growth process.

Method used

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  • Preparation method of perovskite single crystals
  • Preparation method of perovskite single crystals
  • Preparation method of perovskite single crystals

Examples

Experimental program
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Effect test

Embodiment 1

[0023] CsPb with an average side length of 120µm 2 Br 5 Fabrication of Perovskite Single Wafers

[0024] 1) The silica substrate was ultrasonically cleaned with acetone, 70% ethanol and deionized water for 20 minutes respectively; then placed in an oven at 60°C for overnight drying;

[0025] 2) In 5mL hydrobromic acid, the concentration of CsBr is 0.06mol / L, PbBr 2 The concentration is 0.12mol / L, and the precursor solution of perovskite is configured;

[0026] 3) Heat the perovskite precursor solution to 90 °C, and drop 10 μL on the silica substrate. Then put it in the air and dry it to get CsPb with an average side length of 120µm 2 Br 5 Perovskite single crystal.

[0027] figure 1 CsPb in this example 2 Br 5 Micrograph of a perovskite single wafer. Such as figure 1 Shown, CsPb 2 Br 5 The perovskite single crystals are uniform in size with an average side length of 120 µm. Such as figure 2 Shown is the XRD pattern of a CsPb2Br5 perovskite single wafer, and the...

Embodiment 2

[0029] CsPbBr with an average length of 150 µm 3 Preparation of Perovskite Single Crystal Rods

[0030] 1) The silica substrate was ultrasonically cleaned with acetone, 75% ethanol and deionized water for 25 minutes respectively; then placed in an oven at 70°C for overnight drying;

[0031] 2) In 5mL dimethyl sulfoxide, the concentration of CsBr is 0.06mol / L, PbBr 2 Concentration is 0.12mol / L, obtains the precursor solution of perovskite;

[0032] 3) Heat the perovskite precursor solution to 90 °C, and drop 10 μL on the silica substrate. After drying in the atmosphere, a CsPbBr with a length of 150 µm was obtained. 3 Perovskite single crystal rods.

[0033] image 3 CsPbBr in this example 3 A micrograph of a perovskite single crystal rod, as figure 2 Shown, CsPbBr 3 The perovskite single crystal rods are uniform in size with an average length of 150 µm.

Embodiment 3

[0035] CsPbBr with a size of 95 µm 3 Fabrication of Perovskite Single Wafers

[0036] 1) The silica substrate was ultrasonically cleaned with acetone, 75% ethanol and deionized water for 25 minutes respectively; then dried with nitrogen and placed in an oven at 65°C overnight for later use;

[0037] 2) In 5mL dimethyl sulfoxide, the concentration of CsBr is 0.06mol / L, PbBr 2 Concentration is 0.12mol / L, obtains the precursor solution of perovskite;

[0038] 3) Heat the perovskite precursor solution to 90 °C, and drop 10 μL on the silica substrate. Then heat and dry at 50°C to obtain CsPbBr with a side length of 95µm 3 Perovskite single crystal.

[0039] Figure 4 CsPbBr in this example 3 Micrograph of a perovskite single wafer. Such as Figure 4 Shown, CsPbBr 3 The perovskite single crystal is uniform in size, with a size of 95 µm.

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Abstract

The invention discloses a preparation method of perovskite single crystals. The perovskite single crystals are CsPbBr3 perovskite single crystals or CsPb2Br5 perovskite single crystals, and the perovskite single crystals are in the shape of sheet or rod. A preparation method comprises the following steps: cleaning a single crystal growth substrate, wherein respectively carrying out ultrasonic treatment on the substrate for 15-30 minutes with acetone, 70%-80% ethanol and deionized water, taking out the substrate, and drying the substrate in a drying oven overnight to obtain a single crystal growth substrate; preparing a perovskite precursor solution, wherein dissolving CsBr and PbBr2 in hydrobromic acid or dimethyl sulfoxide according to the proportion of 1/1-1/4, controlling the concentration of CsBr to be 0.06 mol/L to 0.3 mol/L, the concentration of PbBr2 to be 0.06 mol/L to 0.3 mol/L, and obtaining a perovskite precursor solution; and preparing the perovskite single crystals, namelypreheating the perovskite precursor solution to 80-95 DEG C, dripping the perovskite precursor solution on the substrate, and removing the solvent to obtain the perovskite single crystals. The methodis simple to operate and low in operation process difficulty, and the components and morphology of the perovskite single crystals are adjustable.

Description

technical field [0001] The invention relates to a method for preparing a perovskite single crystal, belonging to the technical field of perovskite single crystal growth and shape control engineering. Background technique [0002] Lead-based perovskites have high absorption coefficient and strong defect tolerance in the visible light band, so they have high application value in photoelectric conversion devices such as solar cells or photodetectors. The flat crystal plane spontaneously formed during the growth process of the single crystal itself has good compactness and thickness uniformity, so it can obtain a lower defect state density and a longer carrier lifetime than quantum dots. At present, the growth methods of single crystals have been reported. However, its growth process is highly random, and the morphology of the final single crystal is uncontrollable. There are also related reports on the growth method of perovskite single crystals with different components form...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/06C30B29/12
CPCC30B7/06C30B29/12
Inventor 王春雷瞿俊峰徐淑宏
Owner SOUTHEAST UNIV
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