Preparation method of perovskite single crystals

A technology of perovskite and perovskite precursors, which is applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of component control that cannot be single crystal, and achieve low cost and no danger of raw materials. The effect of convenience and convenience of raw material supply
CN110699745AActive Publication Date: 2020-01-17SOUTHEAST UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SOUTHEAST UNIV
Publication Date
2020-01-17

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Abstract

The invention discloses a preparation method of perovskite single crystals. The perovskite single crystals are CsPbBr3 perovskite single crystals or CsPb2Br5 perovskite single crystals, and the perovskite single crystals are in the shape of sheet or rod. A preparation method comprises the following steps: cleaning a single crystal growth substrate, wherein respectively carrying out ultrasonic treatment on the substrate for 15-30 minutes with acetone, 70%-80% ethanol and deionized water, taking out the substrate, and drying the substrate in a drying oven overnight to obtain a single crystal growth substrate; preparing a perovskite precursor solution, wherein dissolving CsBr and PbBr2 in hydrobromic acid or dimethyl sulfoxide according to the proportion of 1 / 1-1 / 4, controlling the concentration of CsBr to be 0.06 mol / L to 0.3 mol / L, the concentration of PbBr2 to be 0.06 mol / L to 0.3 mol / L, and obtaining a perovskite precursor solution; and preparing the perovskite single crystals, namelypreheating the perovskite precursor solution to 80-95 DEG C, dripping the perovskite precursor solution on the substrate, and removing the solvent to obtain the perovskite single crystals. The methodis simple to operate and low in operation process difficulty, and the components and morphology of the perovskite single crystals are adjustable.
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Description

technical field

[0001] The invention relates to a method for preparing a perovskite single crystal, belonging to the technical field of perovskite single crystal growth and shape control engineering. Background technique

[0002] Lead-based perovskites have high absorption coefficient and strong defect tolerance in the visible light band, so they have high application value in photoelectric conversion devices such as solar cells or photodetectors. The flat crystal plane spontaneously formed during the growth process of the single crystal itself has good compactness and thickness uniformity, so it can obtain a lower defect state density and a longer carrier lifetime than quantum dots. At present, the growth methods of single crystals have been reported. However, its growth process is highly random, and the morphology of the final single crystal is uncontrollable. There are also related reports on the growth method of perovskite single crystals with different components form...

Claims

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