Method for improving adhesive force between metal film layer and high-dielectric-constant ceramic substrate

A high dielectric constant, ceramic substrate technology, applied in the manufacture of circuits, electrical components, semiconductors/solid devices, etc., can solve problems such as poor metal adhesion, achieve the effect of reducing difficulty, increasing operation difficulty, and improving roughening state

Active Publication Date: 2020-01-24
XIAN INSTITUE OF SPACE RADIO TECH
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Problems solved by technology

[0004] The technical problem solved by the present invention is: to overcome the deficiencies of the prior art, to provide a method for improving the adhesion of the metal film layer of the high dielectric constant ceramic substr

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  • Method for improving adhesive force between metal film layer and high-dielectric-constant ceramic substrate
  • Method for improving adhesive force between metal film layer and high-dielectric-constant ceramic substrate
  • Method for improving adhesive force between metal film layer and high-dielectric-constant ceramic substrate

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Embodiment Construction

[0035] Ultraviolet laser roughening is the use of a specific ultraviolet laser, through a series of operations such as controlling laser parameters, using the energy of the ultraviolet laser, on the surface of the substrate to be processed, shallowly etches densely arranged fine grooves in a straight line , after two times of superimposed etching in the horizontal and vertical directions, a roughened structure with tooth-shaped bumps and ups and downs is etched on the surface of the substrate to achieve the effect of destroying the brightness and smoothness of the substrate surface. After high-temperature calcination, the surface of the roughened substrate is slightly melted, and the sharp structure at the "peaks" and "valleys" of the concave-convex undulating structure is appropriately weakened, so that the roughened structure after ultraviolet laser etching is obtained to a certain extent. Lubrication". Finally, a roughened surface with a uniform roughening effect and a Ra va...

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Abstract

The invention relates to a method for improving an adhesive force between a metal film layer and a high-dielectric-constant ceramic substrate and belongs to the technical field of fine processing of microwave integrated circuits. According to the method, array scribing type etching roughening treatment is performed on the surface layer of a substrate by adopting ultraviolet laser with specific performance; high-temperature calcination is performed on the coarsened substrate under a high-temperature condition on the basis of a specific temperature curve, so that the roughness Ra value of the surface of the substrate is stabilized within the range of 0.25-0.3 mm, and good roughening uniformity is achieved; and the adhesive force between the metal film layer and the high-dielectric-constant substrate which serves as a base material in the process of manufacturing a microwave integrated thin film circuit.

Description

technical field [0001] The invention relates to a method for improving the adhesion of a metal film layer of a high dielectric constant ceramic substrate, which belongs to the technical field of fine processing of microwave integrated circuits. The high dielectric constant ceramic substrate refers to a TD-36 substrate or an SF210K substrate. Background technique [0002] The circuit pattern of microwave integrated circuit thin film ceramic substrate (abbreviated as MIC chip) has a multi-layer metal structure, and the general substrate is hard ceramics. Because the metal film layer needs to withstand the microwave assembly process, which involves various external effects such as welding, gold wire bonding, gold ribbon bonding, and conductive adhesive bonding, the requirements for the adhesion of the metal film layer are very high. The two most important indicators include: 1. It is required that the destructive tensile value of 250μm gold ribbon pressure welding is above 50g;...

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02H01L21/02518H01L21/02057
Inventor 曲媛张楠杨士成武江鹏宋丽萍左春娟雷莎
Owner XIAN INSTITUE OF SPACE RADIO TECH
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