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Balance control method and system for dichlorosilane in polysilicon production

A technology of dichlorosilane and balance control, applied in the direction of halosilane, chemical instruments and methods, silicon compounds, etc., can solve problems such as unreasonable control of dichlorodihydrogen silicon, abnormal increase of polysilicon products, fluctuation of system parameters, etc., to achieve Guaranteed processing and utilization, reduced safety risks, and low equipment failure rate

Active Publication Date: 2021-08-06
XINTE ENERGY
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  • Abstract
  • Description
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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method and system for the balance control of dichlorosilane in polysilicon production to solve the unreasonable control of dichlorodihydrosilicon in the polysilicon production process. , resulting in increased energy consumption, abnormal increase in polysilicon products, decreased yield, fluctuations in system parameters, poor utilization, etc.

Method used

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  • Balance control method and system for dichlorosilane in polysilicon production

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Experimental program
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Effect test

Embodiment 1

[0053] This embodiment also provides a system used in the balance control method of dichlorosilane in polysilicon production, including:

[0054] A chemical vapor deposition reactor, used for preparing polysilicon by chemical vapor deposition reaction;

[0055] The desorption tower is connected with the chemical vapor deposition reactor, and the tail gas for preparing polysilicon in the chemical vapor deposition reactor flows into the desorption tower, and the desorption tower is used for decomposing hydrogen chloride, and hydrogen chloride is obtained at the top of the desorption tower;

[0056] The first tail gas condensate separation tower is connected with the tower still of the analysis tower, the first tail gas condensate separation tower is used for rectification, and silicon tetrachloride is obtained in the tower still of the first tail gas condensate separation tower;

[0057] The second tail gas condensate separation tower is connected to the top of the first tail ga...

Embodiment 2

[0076] Such as figure 1 As shown, the present embodiment provides a system for the above-mentioned balance control method of dichlorosilane in polysilicon production, including:

[0077] Chemical vapor deposition reactor 1, used for preparing polysilicon by chemical vapor deposition reaction;

[0078] The analysis tower 2 is connected with the chemical vapor deposition reactor 1, and the tail gas for preparing polysilicon in the chemical vapor deposition reactor 1 flows in the analysis tower 2, and the analysis tower 2 is used for analyzing hydrogen chloride, and hydrogen chloride is obtained at the top of the analysis tower 2;

[0079] The first tail gas condensate separation tower 3 is connected with the tower still of the analysis tower 2, and the first tail gas condensate separation tower 3 is used for rectification, and silicon tetrachloride is obtained in the tower still of the first tail gas condensate separation tower 3;

[0080] The second tail gas condensate separat...

Embodiment 3

[0119] This embodiment provides a method for controlling the balance of dichlorosilane in polysilicon production using the system in Embodiment 2. The difference from the method in Embodiment 2 is:

[0120] The first preset molar percentage content of dichlorodihydrosilane is 8.3%; the second preset molar percentage content of dichlorodihydrosilane is 3.8%.

[0121] The temperature of the chemical vapor deposition reaction is 100°C and the pressure is 0.45MPa;

[0122] The temperature in the desorption tower is 122°C and the pressure is 0.9MPa;

[0123] The temperature in the first tail gas condensate separation tower is 135°C and the pressure is 0.78MPa;

[0124] The temperature of the second tail gas condensate separation tower is 84.5°C and the pressure is 0.45MPa.

[0125] The temperature of the cold hydrogenation reaction is 450°C and the pressure is 2.5MPa;

[0126] The temperature in the trichlorosilane separation tower is 62.5°C and the pressure is 0.23MPa;

[0127...

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Abstract

The invention discloses a method and system for controlling the balance of dichlorosilane in the production of polysilicon. The method comprises: 1) analyzing, rectifying, separating and purifying the tail gas produced by chemical vapor deposition reaction to prepare polysilicon; Syngas rectification separation and purification of hydrogen silicon; 2) mixing the bottom liquid of the second tail gas condensate separation tower and the bottom liquid of the last stage trichlorosilane rectification tower to obtain the first mixture; 3) mixing the bottom liquid of the second tail gas condensate separation tower The top liquid of the second tail gas condensate separation tower is mixed with the first mixture to obtain the second mixture, and the flow rate is adjusted so that the molar percentage content of dichlorodihydrosilane in the second mixture is the second preset molar percentage of dichlorodihydrosilane content; 4) passing the second mixture into the chemical vapor deposition reaction in the step 1) as a raw material for continuous preparation of polysilicon. The method precisely controls the content of dichlorodihydrosilane in the second mixture, ensures reasonable and effective treatment and utilization of dichlorodihydrosilane, and reduces energy consumption.

Description

technical field [0001] The invention belongs to the technical field of polysilicon production, and in particular relates to a method and system for controlling the balance of dichlorosilane in polysilicon production. Background technique [0002] High-purity polysilicon production is usually prepared by the "modified Siemens (Siemens)" process, in which trichlorosilane (SiHCl 3 or TCS) gas is deposited onto the heated silicon core carrier in a hydrogen environment. In such a production process, only a small part of TCS is deposited as simple silicon, and the rest is discharged from the reactor in the form of gas, which usually contains more than 45% (mole fraction) is the TCS participating in the reaction, forming a part of 5-10% (mole fraction) dichlorosilane (SiH 2 Cl 2 or DCS), 45-50% (mol fraction) of silicon tetrachloride (SiCl 4 or STC), silicon powder (silicon or Si) and other by-products. [0003] The DCS produced in the production process has always been deeply ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/035C01B33/107
CPCC01B33/035C01B33/1071C01B33/10757
Inventor 蒋鹏陈喜清陈国辉陈文岳王玉丽刘小凤
Owner XINTE ENERGY
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