Al<3+> doped low-infrared and low-thermal-conductivity semiconductor ceramic material and preparation method thereof

A ceramic material, low thermal conductivity technology, applied in low thermal conductivity semiconductor ceramic material and its preparation, Al3+ doped low infrared field, can solve the problems of increased infrared emissivity, low infrared emissivity and high emissivity, and achieves resistance to The effect of strong corrosion and oxidation ability, low infrared emissivity and low thermal conductivity

Active Publication Date: 2020-02-04
INNER MONGOLIA UNIV OF TECH
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  • Abstract
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Problems solved by technology

[0002] Low-infrared emission materials are widely used in the fields of military stealth, energy utilization, and optoelectronic information. Conventional low-infrared emission materials are mostly metal materials, but restricted by the properties of metal materials, there are high infrared emission rates and low thermal conductivity in high-temperature environments. The disadvantages of high rate and prone to corrosion and oxidation limit its use in high temperature environments
For example, the long-term use temperature of resin-based metal micro-powder coating and glass-based metal micro-powder coating is only 300-400°C; the infrared emissivity of metal thin film coatings at room temperature is relatively low, but after high temperature oxidation, its infrared emissivity will decrease. Substantial increase; inorganic low-emissivity coatings can withstand high temperatures up to 600°C, but the emissivity is high, 0.2-0.3 higher than that of metal films

Method used

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  • Al&lt;3+&gt; doped low-infrared and low-thermal-conductivity semiconductor ceramic material and preparation method thereof
  • Al&lt;3+&gt; doped low-infrared and low-thermal-conductivity semiconductor ceramic material and preparation method thereof
  • Al&lt;3+&gt; doped low-infrared and low-thermal-conductivity semiconductor ceramic material and preparation method thereof

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Effect test

Embodiment 1

[0034] SrZr of this embodiment 0.875 Al 0.125 O 3 The citric acid preparation steps of ceramic materials are as follows:

[0035] 1. Preparation of strontium zirconate ceramic powder. In this example, strontium zirconate powder was prepared by the citric acid method

[0036] (A-1) According to the molecular formula SrZr 0.875 Al 0.125 O 3 Calculate the added amount of zirconium nitrate, strontium nitrate, and aluminum nitrate, and weigh zirconium nitrate, strontium nitrate, and aluminum nitrate as raw materials;

[0037] (A-2) Add 10 times the total mass of the reactant raw materials and stir in deionized water. After all the reactants are dissolved, add citric acid. The addition amount of the citric acid is zirconium source raw material, strontium source raw material and aluminum source raw material 2 times the total moles of metal ions, adjust the pH of the solution to 8 with ammonia water, then stir and heat in a water bath at 80°C until the solution is viscous, and stand still fo...

Embodiment 2

[0043] SrZr of this embodiment 0.875 Al 0.125 O 3 The steps of the ceramic material solid-phase reaction method preparation method are as follows:

[0044] 1. Preparation of strontium zirconate powder. In this example, solid phase reaction method was used to prepare strontium zirconate powder.

[0045] (B-1) According to the molecular formula SrZr 0.875 Al 0.125 O 3 Calculate the added amount of zirconium nitrate, strontium nitrate, and aluminum nitrate, and weigh zirconium nitrate, strontium nitrate, and aluminum nitrate as raw materials;

[0046] (B-2) High-speed ball milling for 24 hours to fully mix the reactants;

[0047] (B-3) Put the mixed powder in a high-temperature furnace and keep it at 1600°C for 6 hours to obtain strontium zirconate ceramic powder material.

[0048] 2. Green molding: mix the obtained strontium zirconate ceramic powder material with polyvinyl alcohol (PVA) uniformly, grind and dry, then place the mixture in a mold, dry powder tablet, molding pressure 20MPa, ...

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Abstract

The invention discloses an Al<3+> doped low-infrared and low-thermal-conductivity semiconductor ceramic material and a preparation method thereof; the semiconductor ceramic material has the molecularformula of SrZr(1-x)AlxO3, wherein x is the atom percentage of Al<3+> doped substituted Zr. According to the preparation method, strontium zirconate SrZrO3 is used as a matrix, Al<3+> with different proportions is doped to prepare the semiconductor ceramic material, and the preparation method specifically comprises the following steps: (1) preparation of strontium zirconate powder; (2) biscuit forming; and (3) ceramic firing. The infrared radiance of the prepared semiconductor ceramic material is less than 0.5 at the waveband of 3-5 [mu]m; the heat conductivity is lower than 2.5 W*m<-1>*K<-1>;the semiconductor ceramic material can be used at the environment temperature ranging from the room temperature to 1400 DEG C, the heat conductivity at the temperature of 600-1200 DEG C can be reduced to 1.5 W*m<-1>*K<-1> or below, and the semiconductor ceramic material can well serve in the high-temperature environment, and is stable in performance and high in corrosion and oxidation resistancein the long-term high-temperature environment.

Description

Technical field [0001] The invention relates to the technical field of new materials. Specifically, an Al 3+ Doped low-infrared, low-thermal conductivity semiconductor ceramic material and preparation method thereof. Background technique [0002] Low-infrared emission materials are widely used in the fields of military stealth, energy utilization, and optoelectronic information. Conventional low-infrared emission materials are mostly metal materials, but they are restricted by the properties of metal materials, and have high infrared emissivity and thermal conductivity in high-temperature environments. The shortcomings of high rate and prone to corrosion and oxidation have restricted its use in high-temperature environments. Such as resin-based metal powder coating and glass-based metal powder coating, the long-term use temperature is only 300-400℃; the infrared emissivity of metal film coatings at room temperature is relatively low, but after high temperature oxidation, its inf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/48
CPCC04B35/48C04B2235/3217C04B2235/3218C04B2235/442C04B2235/443C04B2235/444C04B2235/448C04B2235/449C04B2235/96C04B2235/9607
Inventor 马文李恩博白玉董红英张鹏张辰楠齐英伟陈伟东
Owner INNER MONGOLIA UNIV OF TECH
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