Al<3+> doped low-infrared and low-thermal-conductivity semiconductor ceramic material and preparation method thereof

Abstract

The invention discloses an Al<3+> doped low-infrared and low-thermal-conductivity semiconductor ceramic material and a preparation method thereof; the semiconductor ceramic material has the molecularformula of SrZr(1-x)AlxO3, wherein x is the atom percentage of Al<3+> doped substituted Zr. According to the preparation method, strontium zirconate SrZrO3 is used as a matrix, Al<3+> with different proportions is doped to prepare the semiconductor ceramic material, and the preparation method specifically comprises the following steps: (1) preparation of strontium zirconate powder; (2) biscuit forming; and (3) ceramic firing. The infrared radiance of the prepared semiconductor ceramic material is less than 0.5 at the waveband of 3-5 [mu]m; the heat conductivity is lower than 2.5 W*m<-1>*K<-1>;the semiconductor ceramic material can be used at the environment temperature ranging from the room temperature to 1400 DEG C, the heat conductivity at the temperature of 600-1200 DEG C can be reduced to 1.5 W*m<-1>*K<-1> or below, and the semiconductor ceramic material can well serve in the high-temperature environment, and is stable in performance and high in corrosion and oxidation resistancein the long-term high-temperature environment.

Description

Technical field [0001] The invention relates to the technical field of new materials. Specifically, an Al 3+ Doped low-infrared, low-thermal conductivity semiconductor ceramic material and preparation method thereof. Background technique [0002] Low-infrared emission materials are widely used in the fields of military stealth, energy utilization, and optoelectronic information. Conventional low-infrared emission materials are mostly metal materials, but they are restricted by the properties of metal materials, and have high infrared emissivity and thermal conductivity in high-temperature environments. The shortcomings of high rate and prone to corrosion and oxidation have restricted its use in high-temperature environments. Such as resin-based metal powder coating and glass-based metal powder coating, the long-term use temperature is only 300-400℃; the infrared emissivity of metal film coatings at room temperature is relatively low, but after high temperature oxidation, its inf...

AI Technical Summary

Problems solved by technology

[0002] Low-infrared emission materials are widely used in the fields of military stealth, energy utilization, and optoelectronic information. Conventional low-infrared emission materials are mostly metal materials, but restricted by the properties of metal materials, there are high infrared emission rates and low thermal conductivity in high-temperature environments. The disadvantages of high rate and prone to corrosion and oxidation limit its use in high temperature environments

For example, the long-term use temperature of resin-based metal micro-powder coating and glass-based metal micro-powder coating is only 300-400°C; the infrared emissivity of metal thin film coatings at room temperature is relatively low, but after high temperature oxidation, its infrared emissivity will decrease. Substantial increase; inorganic low-emissivity coatings can withstand high temperatures up to 600°C, but the emissivity is high, 0.2-0.3 higher than that of metal films

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