Antimonide superlattice very-long wave infrared detector with dark current suppression structure

Abstract

The invention relates to an antimonide superlattice very-long wave infrared detector with a dark current suppression structure so as to suppress a device dark current and improve photon-generated carrier transport. The detector comprises a substrate, a buffer layer arranged on the substrate in an epitaxial manner, a medium-long wave band contact layer which is called as a P region and is arrangedon the buffer layer in an epitaxial manner, a very-long wave band absorption layer which is called as a pi region and is arranged on the P region of the medium-long wave band contact layer in an epitaxial manner, a medium-long wave band barrier layer which is called as an M region and is arranged on the pi region of the very-long wave band absorption layer in an epitaxial manner, a medium-long wave band contact layer which is called as an N region and is arranged on the medium-long wave band barrier layer M region in an epitaxial manner, and a cover layer arranged on an N region of the medium-long wave band contact layer in an epitaxial manner, wherein doping modes and thickness of the superlattice structure, the absorption layer and the barrier layer of each region are adjusted and controlled so as to design an energy band structure of the infrared detector. The detector is advantaged in that the detector is based on a PpiMN structure, and a brand-new barrier structure design is provided and relates to superlattice, thickness and doping.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a structure of a superlattice very long-wave infrared detector to suppress device dark current and improve photogenerated carrier transport. Especially the energy band structure of a VLWIR detector based on antimonide superlattice. Based on the PπMN structure, the structure proposes a new barrier structure design involving superlattice structure, thickness and doping, etc. Background technique [0002] Objects above absolute zero are always radiating electromagnetic waves to the outside world, and those with wavelengths in the range of 0.76-1000 μm are called infrared radiation. Objects exhibit different infrared characteristics due to their different temperatures, so infrared detection technology has extensive and important applications in military, civilian, astronomical and other fields. Among them, the very long wave infrared detection technology (...

AI Technical Summary

Problems solved by technology

The problem with existing VLWIR detectors is that the dynamic impedance R 0 A is low and decreases rapidly with increasing reverse bias voltage

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