Nine-cavity vertical plasma enhanced chemical vapor deposition (PECVD)-PVD integrated silicon chip coating technology

Abstract

The invention relates to a nine-cavity vertical plasma enhanced chemical vapor deposition (PECVD)-PVD integrated silicon chip coating technology. A feeding cavity, a pre-heating cavity, an intrinsic amorphous silicon film deposition PECVD cavity, a doped amorphous silicon film deposition PECVD cavity, a transition cavity, a first transparent conductive oxide (TCO) film deposition PVD cavity, a second TCO film deposition PVD cavity, a third TCO film deposition PVD cavity and a discharging cavity are sequentially connected through vacuum locks and provided with the vacuum locks at the heads andtails, a moving device is connected with all the cavities and all the vacuum locks from front to rear in a penetrating mode, a vertical carrying plate is arranged in the feeding cavity, the vertical carrying plate is arranged on the moving device and is in a state of being capable of moving in integrated equipment from front to rear, a sputtering target is arranged in the second TCO film deposition PVD cavity, and all the cavities are externally connected with a hyperpure gas circuit system, a heating system and a vacuumizing system. The product preparation process procedure can be effectivelyprevented from being exposed in air, the performance of a crystalline silicon heterojunction solar cell is improved, and the production cost of the solar cell is lowered.

Description

technical field [0001] The invention relates to the field of high-efficiency crystalline silicon solar cell manufacturing, in particular to a 9-cavity vertical PECVD-PVD integrated silicon wafer coating process for solar cell manufacturing. Background technique [0002] Currently, a class of advanced and efficient crystalline silicon solar cells is based on amorphous silicon / crystalline silicon heterojunction structures. The two key steps in its production technology are the deposition of amorphous silicon-based films (including intrinsic layers and doped layers, made of amorphous silicon, microcrystalline silicon, nano-silicon, oxygen-doped amorphous silicon, etc.) and transparent conductive Deposition of the oxide TCO layer. The more commonly used deposition methods for amorphous silicon-based thin films are low-temperature chemical vapor deposition methods, including plasma chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD); the TCO layer is...

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Problems solved by technology

The overall system is very complex

Moreover, because the product must be exposed to the air during the transfer process between the CVD and PVD systems, the surface of the product is affected by water vapor, oxygen, dust, etc. in the air, resulting in performance degradation; the operating costs in production are high, and the number of workers required is relatively large. many

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