Semiconductor substrate and method for separating substrate layer from functional layer on substrate layer

A technology of functional layer and substrate layer, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as easy fracture

Pending Publication Date: 2020-02-25
胡兵 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem that thinner substrates are prone to fracture during separation in the existing ion implantation combined with stress-introduction layer separation technology, the first aspect of the present invention provides a method for separating the substrate layer from the upper functional layer, including :

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  • Semiconductor substrate and method for separating substrate layer from functional layer on substrate layer
  • Semiconductor substrate and method for separating substrate layer from functional layer on substrate layer
  • Semiconductor substrate and method for separating substrate layer from functional layer on substrate layer

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Embodiment Construction

[0042] In order to illustrate the present invention more clearly, the present invention will be further described below in conjunction with preferred embodiments and accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. Those skilled in the art should understand that the content specifically described below is illustrative rather than restrictive, and should not limit the protection scope of the present invention.

[0043] image 3 and Figure 4 A schematic diagram of the structure of the semiconductor substrate layer provided by the embodiment of the present invention is shown, as shown in the figure, including: a substrate layer 10, the substrate layer 10 includes a substrate body layer 20 formed by ion implantation, and is located on the substrate body layer 20- The ion damage layer 40 on the side and the substrate film layer 30 on the ion damage layer; the functional layer 90 is formed on the substrate film layer 30, generally, t...

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Abstract

The invention discloses a semiconductor substrate and a method for separating a substrate layer from a functional layer on the substrate layer. The semiconductor substrate comprises a substrate layer,wherein the substrate layer comprises a substrate main body layer formed through ion implantation, an ion damage layer located on one side of the substrate main body layer and a substrate thin film layer arranged on the ion damage layer, and the substrate thin film layer is prepared into a functional layer through a semiconductor; and a stress importing layer and a supporting piece, wherein one of the stress importing layer and the supporting piece is positioned on one side, far away from the ion damage layer, of the functional layer, and the other one is positioned on one side, far away fromthe ion damage layer, of the substrate main body layer. According to the semiconductor substrate, the problem of substrate cracking caused by bending of a thin substrate is solved, the semiconductorsubstrate can be suitable for the thin substrate, and the separation success rate is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors. More particularly, it relates to semiconductor substrates, methods of separating substrate layers from functional layers thereon. Background technique [0002] Ion implantation and separation (Smart-Cut), controlled spalling (controlled spalling), laser separation (Laser liftoff) and epitaxial separation (epitaxial lift off) technologies are currently the main means of separation and film transfer in the semiconductor industry. Ion implantation bonding and separation technology first implants hydrogen ions to generate an ion damage layer in the donor substrate, and then bonds the donor substrate and the acceptor substrate. The bonded substrate is annealed at several hundred degrees, and the donor substrate It can be separated from the acceptor substrate at the ion damage layer to complete the film transfer. The key to the success or failure of the application of ion implantation bonding ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
CPCH01L21/6835H01L2221/68386H01L21/02002H01L21/7806H01L21/76254H01L21/0262H01L29/47H01L21/0254H01L29/456H01L21/02631H01L33/0093
Inventor 胡兵
Owner 胡兵
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