Solid precursor vapor pressure stabilization and purification device and ALD deposition equipment

Abstract

The embodiment of the invention provides a solid precursor vapor pressure stabilization and purification device. The solid precursor vapor pressure stabilization and purification device comprises a shell, wherein a closed processing space is formed in the shell. The shell is provided with an air inlet and an exhaust port which communicate with a processing space. The solid precursor vapor pressurestabilization and purification device further comprises a plurality of uniform flow components. The plurality of uniform flow components are arranged in the shell and are sequentially arranged in thevertical direction. The processing space is divided into a plurality of sub-spaces which are sequentially arranged from bottom to top. The uniform flow components are provided with through holes. Theadjacent sub-spaces communicate through the through holes. An air inlet communicates with the sub-space located on the lowermost portion. The exhaust port communicates with the sub-space located on the uppermost portion. The invention further provides ALD deposition equipment. The pressure stabilization and purification device can improve the stability of steam of a low-vapor pressure precursor,and reduce the pollution of precursor solid particles to a transmission pipeline, a chamber and a product.

Description

Technical field [0001] The embodiment of the present invention relates to a pressure-stabilizing and purifying device for preparing solid precursor vapor of TaN and ALD deposition equipment. Background technique [0002] When the size of semiconductor components enters the sub-micron (sub-micron) era, Cu has low resistance (about 1.7μΩ.cm, Al resistance is about 3.1μΩ.cm), high current density, good thermal conductivity, and high resistance to electron migration. Ability (higherelectromigration resistance) as interconnecting metal. As a component wire below 22nm with high component density and speed, these properties of Cu are more important. There are many Cu deposition methods, and the usual methods are PVD and ECD (electrochemical deposition). Since Cu diffuses into Si, SiO2 and other low-k dielectric layer materials, it is easy to damage the integrity of the component and cause the pollution of the component. Therefore, it is very important to deposit a good Ta / TaN thin fil...

AI Technical Summary

Problems solved by technology

Unlike liquid sources, solid sources cannot always keep the liquid level parallel due to fluidity and gravity

During the heating process of the solid source, the part near the edge of the source bottle is easier to evaporate than the middle part of the source bottle. Therefore, during the process of heating and sublimating from the solid source to form a vapor, the precursor vapor carried by the carrier gas inevitably contains solids. Particles, these solid particles enter the pipeline and chamber to cause pollution; the difference in heating temperature between the edge and the middle, upper and lower parts of the source bottle leads to the difference in evaporation and sublimation speed, and inevitably leads to the instability of the precursor vapor, thus causing ALD Instability of the number of pulses of the precursor in the cycle pulse

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