Solid precursor vapor pressure stabilization and purification device and ALD deposition equipment

A purification device and precursor technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of evaporation sublimation speed difference, pollution, precursor vapor instability, etc., to avoid thermal decomposition, Effect of increasing steam pressure and stabilizing supply flow

Pending Publication Date: 2020-03-17
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unlike liquid sources, solid sources cannot always keep the liquid level parallel due to fluidity and gravity
During the heating process of the solid source, the part near the edge of the source bottle is easier to evaporate than the middle part of the source bottle. Therefore, during the process of heating and sublimating from the solid source to form a vapor, the precursor vapor carried by the carrier gas inevitably conta

Method used

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  • Solid precursor vapor pressure stabilization and purification device and ALD deposition equipment
  • Solid precursor vapor pressure stabilization and purification device and ALD deposition equipment
  • Solid precursor vapor pressure stabilization and purification device and ALD deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0051] Example one

[0052] This embodiment provides a pressure-stabilizing and purifying device 9 for solid precursor vapor. For further reference Figure 3 to Figure 5 , image 3 Is a schematic diagram of the structure of the top cover part according to an embodiment of the present invention; Figure 4 Is a schematic diagram of the structure of the barrel 11 according to an embodiment of the present invention; Figure 5 It is a schematic diagram of the structure of the flow even component 12 according to an embodiment of the present invention. The casing of the device 9 for pressure stabilization and purification of solid precursor vapor includes a cylinder 11 and a top cover 16. The cylinder 11 has a cylindrical shape, the bottom of the cylinder 11 is closed, and the upper end is open. The disc-shaped top cover 16 is detachably connected to the top of the cylinder 11, and the air inlet 13 and the exhaust port 14 are both provided on the top cover 16. One end of the vent pipe...

Example Embodiment

[0056] Example two

[0057] This embodiment provides a device 9 for pressure stabilization and purification of solid precursor steam. The difference between the structure and the first embodiment is that there is no bushing, and no annular shoulder 17 is required in the cylinder 11. The disc-shaped uniform flow plates 18 are arranged at intervals in the vertical direction inside the cylinder 11, and the edges of the uniform flow plates 18 are connected to the side walls of the cylinder 11. The edge of the flow plate 18 can be fixedly connected from the outside of the side wall of the cylinder 11 by screws, or the edge of the flow plate 18 can be directly welded to the side wall of the cylinder 11.

Example Embodiment

[0058] Example three

[0059] This embodiment provides a device 9 for stabilizing and purifying solid precursor steam. The difference between the structure and the first embodiment is that the disc-shaped uniform flow plates 18 are arranged at intervals in the vertical direction inside the cylinder 11 , The vent pipe 15 passes through the perforation of the uniform flow plate 18, and each uniform flow plate 18 is fixedly connected with the vent pipe 15 at the perforation. A bushing or no bushing may be provided in the cylinder 11, if no bushing is provided, the diameter of the flow plate 18 is slightly smaller than the inner diameter of the cylinder 11, and there is no need to provide an annular shoulder 17 in the cylinder 11; A bush is provided, and the diameter of the flow plate 18 is slightly smaller than the inner diameter of the bush. When disassembling, the uniformity plate 18 can be removed at the same time as the top cover assembly 10 is removed. The uniform flow plate ...

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PUM

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Abstract

The embodiment of the invention provides a solid precursor vapor pressure stabilization and purification device. The solid precursor vapor pressure stabilization and purification device comprises a shell, wherein a closed processing space is formed in the shell. The shell is provided with an air inlet and an exhaust port which communicate with a processing space. The solid precursor vapor pressurestabilization and purification device further comprises a plurality of uniform flow components. The plurality of uniform flow components are arranged in the shell and are sequentially arranged in thevertical direction. The processing space is divided into a plurality of sub-spaces which are sequentially arranged from bottom to top. The uniform flow components are provided with through holes. Theadjacent sub-spaces communicate through the through holes. An air inlet communicates with the sub-space located on the lowermost portion. The exhaust port communicates with the sub-space located on the uppermost portion. The invention further provides ALD deposition equipment. The pressure stabilization and purification device can improve the stability of steam of a low-vapor pressure precursor,and reduce the pollution of precursor solid particles to a transmission pipeline, a chamber and a product.

Description

Technical field [0001] The embodiment of the present invention relates to a pressure-stabilizing and purifying device for preparing solid precursor vapor of TaN and ALD deposition equipment. Background technique [0002] When the size of semiconductor components enters the sub-micron (sub-micron) era, Cu has low resistance (about 1.7μΩ.cm, Al resistance is about 3.1μΩ.cm), high current density, good thermal conductivity, and high resistance to electron migration. Ability (higherelectromigration resistance) as interconnecting metal. As a component wire below 22nm with high component density and speed, these properties of Cu are more important. There are many Cu deposition methods, and the usual methods are PVD and ECD (electrochemical deposition). Since Cu diffuses into Si, SiO2 and other low-k dielectric layer materials, it is easy to damage the integrity of the component and cause the pollution of the component. Therefore, it is very important to deposit a good Ta / TaN thin fil...

Claims

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Application Information

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IPC IPC(8): C23C16/448C23C16/455
CPCC23C16/4481C23C16/45525
Inventor 秦海丰史小平兰云峰王勇飞纪红赵雷超张文强
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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