Production method of high-purity nanocrystalline silicon

A technology of nanocrystalline silicon and its production method, which is applied in the production of high-purity nanocrystalline silicon and the field of producing nanocrystalline silicon, can solve the problems of difficult industrial production, poor stability, and high cost, and achieve prevention of re-agglomeration, small particle size, and energy saving The effect of investment fees

Active Publication Date: 2020-03-17
JIANGSU ZHONGNENG POLYSILICON TECH DEV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Aiming at the problems of high cost, low purity, poor stability, and difficulty in industrialized production of the existing nanocrystalline silicon preparation technology, the present invention provides a production method of high-purity nanocrystalline silicon, which can effectively control the purity, particle size and Stability, realizing low-cost mass production, and the morphology of the produced porous nanocrystalline silicon particles is flexible and adjustable

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  • Production method of high-purity nanocrystalline silicon
  • Production method of high-purity nanocrystalline silicon

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Comparison scheme
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Embodiment 1

[0060] A kind of production method of high-purity nanocrystalline silicon of the present invention specifically comprises the following steps:

[0061] 1) Select high-purity rod-shaped silicon waste, quench and crush, sieve, and grind to obtain high-purity silicon powder <50 μm.

[0062] 2) Send the silicon powder, dispersion liquid, and dispersant to the stirring tank through the conveying pipeline and stir evenly at high speed, wherein the solid content is 30%, the dispersant is 10 wt%, the rotational speed is 1500 r / min, and the pre-stirring time is 15 min, to obtain the silicon powder slurry.

[0063] 3) Transport the silica powder slurry to a 3L nano-sand mill through a pipeline at a feed rate of 5 L / min, with a ball-to-material ratio of 4:1, zirconia beads with a grinding medium particle size of 0.1 mm, and a rotational speed of 1000r / min , and sanded for 24 h to obtain high-purity nanocrystalline silicon slurry. The dispersion liquid is a combination of absolute ethan...

Embodiment 2

[0067] A kind of production method of high-purity nanocrystalline silicon of the present invention specifically comprises the following steps:

[0068] 1) Select high-purity coral material, crush, grind, and sieve to obtain high-purity coarse silica powder <50 μm.

[0069] 2) Send the coarse silicon powder, dispersion liquid and dispersant to the stirring tank through the conveying pipeline and stir evenly at high speed to obtain the silicon powder slurry. Among them, the solid content is 15%, and the dispersant is 5 wt%. The rotation speed is 1800 r / min, and the pre-stirring time is 12 minutes.

[0070] 3) Transport the silicon powder slurry to a 3 L nano-sand mill through a pipeline at a feed rate of 8 L / min, the ball-to-material ratio is 5:1, the particle size of the grinding medium is 0.1 mm zirconia balls, and the speed is 1200r / min, sanding for 12 h to obtain high-purity nanocrystalline silicon slurry. The dispersion liquid is a combination of isopropanol and glyceri...

Embodiment 3

[0074] A kind of production method of high-purity nanocrystalline silicon according to the present invention specifically comprises the following steps:

[0075] 1) Select the by-product silicon powder of granular silicon in the fluidized bed method, carry out sieving and grinding, and prepare high-purity silicon powder of <40 μm;

[0076] 2) Send the silicon powder, dispersion liquid, and dispersant to the stirring tank through the conveying pipeline and stir evenly at high speed to obtain the silicon powder slurry. Among them, the solid content is 10%, the dispersant is 1 wt%, the rotation speed is 2200 r / min, and the pre-stirring time is 5 min.

[0077] 3) Pipeline the silicon powder slurry to a 3L nano-sand mill at a feed rate of 9L / min, the ball-to-material ratio is 8:1, the particle size of the grinding medium is 0.05mm silicon carbide balls, and the speed is 1500r / min. 10 h to obtain high-purity nanocrystalline silicon slurry. The dispersion liquid is a combination of...

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Abstract

The invention discloses a production method of high-purity nanocrystalline silicon, which comprises the following steps: 1) pretreating a waste silicon material and/or byproduct silicon powder to obtain 10-50 [mu]m silicon powder; (2) adding the silicon powder in the step (1) into dispersion liquid according to the proportion of 5-30wt% of solid content, then adding 1-10wt% of dispersing agent, and performing stirring in a dispersing tank to form silicon powder slurry; 3) pumping the silicon powder slurry formed in the step 2) into a sand mill for grinding to obtain nanocrystalline silicon slurry with the average particle size of 20-30 nm; and 4) conveying the nanocrystalline silicon slurry obtained in the step 3) to a spray drying system to obtain the nano-porous crystalline silicon particles. According to the invention, low-cost large-scale production is realized, the stability, purity and granularity of the nanocrystalline silicon are effectively controlled, the morphology of the produced nano-porous crystalline silicon particles is adjustable, the internal pores of the nano-porous crystalline silicon particles are nano communicating pores, the volume expansion of the silicon iseffectively relieved, and the electrical properties of the silicon negative electrode are also remarkably improved.

Description

technical field [0001] The invention relates to a method for producing nanocrystalline silicon, in particular to a method for producing high-purity nanocrystalline silicon, and belongs to the technical field of high-purity nanocrystalline silicon preparation. Background technique [0002] At present, the negative electrode material of lithium-ion batteries generally adopts the traditional graphite negative electrode. In the fully intercalated state (LiC 6 ), the corresponding capacity is only 372mAh / g. With the development of technology, the actual theoretical energy density of the commercialization of traditional graphite negative electrodes has reached 360mAh / g, which is close to the theoretical energy density, and there is no room for improvement. Studies have found that silicon can be alloyed with lithium at room temperature to form Li 4.4 Si phase, the theoretical specific capacity is as high as 4200mAh / g, so silicon anode materials have attracted the attention of re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/38H01M10/0525C01B33/02B82Y40/00
CPCH01M4/386H01M10/0525C01B33/02B82Y40/00Y02E60/10
Inventor 孟祥曼王亮江宏富高海棠
Owner JIANGSU ZHONGNENG POLYSILICON TECH DEV
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