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Double-die device test circuit, method and system

A technology for testing circuits and testing systems, which is applied in the direction of testing, measuring electricity, and measuring electrical variables of a single semiconductor device, and can solve problems such as the inability to improve the testing efficiency of dual-die devices.

Pending Publication Date: 2020-03-27
BEIJING HUAFENG TEST & CONTROL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a dual-die test circuit, method and system for the problem that the test efficiency of the dual-die device cannot be improved

Method used

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  • Double-die device test circuit, method and system
  • Double-die device test circuit, method and system

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Embodiment Construction

[0043] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0044] See figure 2 , the embodiment of the present invention provides a dual-die device testing circuit, method and system. The dual-die device testing circuit includes a device under test 100 , a voltage source 200 and a switch circuit 300 . The device under test 100 includes a f...

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Abstract

The invention relates to a double-die device test circuit, method and system. The dual-die device test circuit comprises a device to be tested, a voltage source and a switching circuit. A first floating voltage source in the voltage source package comprises a first driving voltage output end, a first induced voltage output end and a first common voltage output end, and a second floating voltage source in the voltage source package comprises a second driving voltage output end, a second induced voltage output end and a second common voltage output end. The switching circuit comprises a plurality of switching tubes; each output end is electrically connected with the switching tubes in a one-to-one correspondence manner; the first driving voltage output end can be electrically connected withthe grid electrode of the first tube core through the switch tube; the first induced voltage output end can be electrically connected with the source electrode of the first tube core and the second common voltage output end through the switch tube. The second driving voltage output end can be electrically connected with the grid electrode of the second tube core through the switch tube, and the second induction voltage output end can be electrically connected with the source electrode of the second tube core and the first common voltage output end through the switch tube.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit testing, in particular to a dual-die device testing circuit, method and system. Background technique [0002] In the field of integrated circuit testing, conventional MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) wafer testing requires automatic testing equipment equipped with analog voltage / current source meters and placed wafers. Round special equipment - probe station. Lead two wires from the same point of the chuck (Chuck platform), which are respectively used as the driving voltage and induced voltage signal lines of the drain of the MOSFET substrate. The top surface of the MOSFET wafer is the source and gate of each die, and these electrodes are drawn out through a probe card, and the probes are respectively set as probes for driving voltage signals and induced voltage signals. However, for dual gate (dual gate) MOSFET devices with dual dies, the top s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28G01R31/26
CPCG01R31/2621G01R31/2851
Inventor 郝瑞庭宋利鹏
Owner BEIJING HUAFENG TEST & CONTROL TECH CO LTD