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Vertical graphene and growth method thereof

A growth method and graphene technology, applied in the field of graphene, can solve the problems of not being able to fully meet the practical needs and the slow rate of graphene, and achieve the effect of wide commercial application, simple method, and high-efficiency realization

Inactive Publication Date: 2020-04-03
BEIJING GRAPHENE INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, as a whole, the graphene prepared by RF-PECVD is not vertical graphene perpendicular to the substrate in the strict sense, and the method grows graphene in the vertical direction slowly, so the above-mentioned various Both the preparation method and the result cannot fully meet the practical needs

Method used

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  • Vertical graphene and growth method thereof

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Experimental program
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Effect test

Embodiment 1

[0074] use figure 1 The shown setup performs vertical graphene growth. Among them, the reaction temperature is set to 650°C, the power of the plasma source is set to 250W, a voltage of 20V is introduced into the plasma-enhanced chemical vapor deposition system, the distance between the two plates is 1.5cm, 20sccm methanol is added as a carbon source, and the growth is 0.5h .

[0075] Figure 5A It is the SEM figure of the vertical graphene of embodiment 1, it can be seen that a neat vertical graphene array has been grown on the substrate, wherein the upper left corner is the vertical graphene array surface observed from a top view angle, and the center of the figure shows A topography image of vertical graphene arrays grown on a substrate viewed from the side is shown. Figure 5B Be the Raman test figure of the vertical graphene of embodiment 1, Figure 5C It is the transmission electron microscope figure of the vertical graphene of embodiment 1; Figure 5D It is the XPS ...

Embodiment 2

[0077] use figure 1 The shown setup performs vertical graphene growth. Among them, the reaction temperature is set to 650°C, the power of the plasma source is set to 250W, a voltage of 40V is introduced into the plasma-enhanced chemical vapor deposition system, the distance between the two plates is 1.5cm, 20sccm methanol is added as a carbon source, and the growth is 0.5h , Figure 6 It is the SEM figure of the vertical graphene of embodiment 2, wherein the upper left corner is the vertical graphene array surface observed from the top view angle, and the center of the figure shows the vertical graphene array grown on the substrate observed from the side Topography.

Embodiment 3

[0079] use figure 1 The shown setup performs vertical graphene growth. Among them, the reaction temperature is set to 650°C, the power of the plasma source is set to 250W, a voltage of 60V is introduced into the plasma-enhanced chemical vapor deposition system, the distance between the two plates is 1.5cm, 20sccm methanol is added as a carbon source, and the growth is 0.5h , Figure 7 It is the SEM figure of the vertical graphene of embodiment 3, wherein the upper left corner is the vertical graphene array surface observed from the top view angle, and the center of the figure shows the vertical graphene array grown on the substrate observed from the side Topography.

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Abstract

The invention provides vertical graphene and a growth method thereof. The growth method of the vertical graphene comprises the steps of providing a substrate and placing the substrate in a reaction cavity; and introducing a carbon source and additionally introducing a vertical electric field into the reaction chamber so as to carry out vapor deposition reaction on a surface of the substrate to grow the vertical graphene. By introducing the vertical electric field into a vapor deposition reaction system, the graphene can grow strictly in the vertical direction, and the vertical graphene completely perpendicular to the substrate is obtained. The method is simple and efficient, and the rapid growth of the vertical graphene can be realized.

Description

technical field [0001] The present disclosure relates to the field of graphene, in particular to a vertical graphene and a growth method thereof. Background technique [0002] Chemical vapor deposition (CVD) is a conventional method for growing graphene films, but due to the limitation of high growth temperature and slow growth rate, scientists have proposed a plasma-enhanced chemical vapor deposition (PECVD) system, which uses plasma to generate The introduction of the source provides additional energy for the decomposition of the carbon source precursor, especially at a relatively low temperature, even on non-metallic substrates with lower catalytic capabilities than metal substrates, high-quality graphene can be grown . [0003] PECVD is often used to grow vertical graphene. In terms of the type of plasma source, PECVD can be divided into microwave plasma source MW-PECVD (Ueda K. et al. Jpn. J. Appl. Phys. 2005, 44, 2074), radio frequency plasma source RF-PECVD (Sato G ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 张锦许世臣孙阳勇高振飞罗家俊
Owner BEIJING GRAPHENE INST
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