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Electrostatic chuck of non-sintered aluminum nitride

An electrostatic chuck and aluminum nitride technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as difficult sintering and poor performance of dielectric layer materials, and achieve low porosity, anti-oxidation, and high strength. Effect

Pending Publication Date: 2020-04-03
SUZHOU XINHUILIAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Purpose of the invention: to solve the problem in the prior art that the performance of the dielectric layer material is poor, and the aluminum nitride (AlN) material with good performance is difficult to sinter

Method used

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  • Electrostatic chuck of non-sintered aluminum nitride
  • Electrostatic chuck of non-sintered aluminum nitride
  • Electrostatic chuck of non-sintered aluminum nitride

Examples

Experimental program
Comparison scheme
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Embodiment

[0023] Hereinafter, the non-sintered aluminum nitride electrostatic chuck of the present invention will be described in detail with reference to the drawings.

[0024] As a preferred embodiment of the present invention, the non-sintered aluminum nitride (AlN) electrostatic chuck of the present invention includes a substrate 20 , an insulator 15 , an electrode 30 and a dielectric 10 from bottom to top.

[0025] figure 1 with figure 2 They are respectively a cross-sectional view and a plan view of an implementation example of the non-sintered aluminum nitride (AlN) electrostatic chuck of the present invention.

[0026] In the sinterless aluminum nitride (AlN) electrostatic chuck of the present invention, the coating of aluminum nitride can be formed by various coating methods.

[0027] In particular, the coating of the present invention can be formed by any method such as vapor deposition, hot spray or low-temperature high-speed spray. That is to say, the above-mentioned coa...

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Abstract

The invention relates to an electrostatic chuck of a non-sintered aluminum nitride. The electrostatic chuck sequentially comprises a base, an insulator, an electrode and a dielectric layer from bottomto top, and the dielectric is combined on the electrode through spraying without a sintering process and a bonding process. The electrostatic chuck has excellent electrostatic property and thermal conductivity, and has excellent bonding strength between the dielectric layer and the electrode.

Description

technical field [0001] The present invention relates to a non-sintered aluminum nitride (AlN) electrostatic chuck, especially as a non-sintered electrostatic chuck for fixing the dielectric layer of the wafer during wafer processing (without the sintering process and bonding process, the dielectric layer is combined, It is characterized by excellent electrostatic properties as well as excellent bonding strength and thermal conductivity). Background technique [0002] In general, in reaction chambers used in processes such as etching and vapor deposition of semiconductor elements, wafers must be fixed on chucks to ensure processing precision. In this type of fixed electrostatic chuck, the wafer is generally fixed by using the electrostatic force of the electrostatic chuck. [0003] That is to say, electrostatic chucks are generally used in some semiconductor manufacturing equipment such as plasma chemical evaporation equipment and etching equipment. parts. For this reason,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
CPCH01L21/6833
Inventor 杨冬野袁蕾
Owner SUZHOU XINHUILIAN SEMICON TECH CO LTD
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