Array substrate and manufacturing method thereof

Abstract

The invention discloses a manufacturing method of an array substrate. The method comprises the following steps of (1) in a photoetching process, taking a photoresist pattern as a mask, forming a firstgate precursor of an LTPS thin film transistor and a second gate precursor of an oxide thin film transistor; (2) carrying out ion heavy doping by taking the photoresist pattern as the mask, forming ion heavily doped regions at the two opposite sides of the polycrystalline silicon layer; (3) etching the first gate precursor and the second gate precursor to form a first grid electrode and a secondgrid electrode; (4) removing the photoresist pattern, taking the first grid electrode the mask to carry out ion light doping, forming ion lightly doped regions at the two opposite sides of the polycrystalline silicon layer; and (5) forming two first source and drain electrodes of the LTPS thin film transistor and two second source and drain electrodes of the oxide thin film transistor in another photoetching process so as to reduce the number of the required masks under the condition that the compatibility of the LTPS thin film transistor process and the oxide thin film transistor process is not influenced. The invention further discloses the array substrate manufactured through the method.

Description

technical field [0001] The disclosure relates to the field of liquid crystal display (Liquid Crystal Display, LCD) technology, in particular to an array substrate and a manufacturing method thereof. Background technique [0002] LCD is widely used due to its advantages of high image quality, power saving, thinness and lightness. In recent years, LCDs have been continuously developed towards narrow bezels and low power consumption. In order to make LCD more power-saving with limited space and battery capacity, Low Temperature Poly-Oxide (LowTemperature Poly-Oxide, LTPO) technology came into being. LTPO technology generally uses low temperature polysilicon (Low Temperature Poly-Silicon, LTPS) thin film transistors in the gate driver on array (GOA) area of ​​the array substrate, which has the advantages of high mobility, small size, and fast charging and can effectively Reduce border size. In addition, an oxide thin film transistor, such as an indium gallium zinc oxide (IGZO...

AI Technical Summary

Problems solved by technology

[0004] In order to effectively solve the technical problem of the high mask cost of the current low temperature polycrystalline oxide (Low Temperature Poly-Oxide, LTPO) array substrate without affecting the compatibility between the LTPS thin film transistor process and the oxide thin film transistor process, this disclosure provides A method for manufacturing an array substrate

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