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Heterojunction device with high conversion efficiency

A heterojunction, high-conversion technology, used in semiconductor devices, electrical components, photovoltaic power generation, etc., can solve the problems of high interface state density and poor lattice matching, and achieve low interface state density, high conversion efficiency, and low Effect of Surface Light Reflection Loss

Pending Publication Date: 2020-04-10
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, device performance critically depends on band alignment and built-in potential at the interface, so knowledge of the microstructure, atomic structure and electronic properties at the heterointerface is the most fundamental step to better control the performance; however, current The heterojunction also has defects such as poor lattice matching and high interface state density.

Method used

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  • Heterojunction device with high conversion efficiency

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Effect test

Embodiment 1

[0020] Such as figure 1 As shown, the present invention provides a high conversion efficiency heterojunction device, including a p-type crystalline silicon substrate 2, the bottom surface of the p-type crystalline silicon substrate 2 is provided with a back electrode 1, and the p-type crystalline silicon substrate 2 The top surface is stacked with an n-type emission film layer 3 , a transparent conductive layer 4 and a front electrode 5 sequentially from bottom to top, and the top surface of the p-type crystalline silicon substrate 2 has a concave-convex textured structure.

[0021] The back electrode 1 is an Al thin film with a thickness of 0.8 μm, the thickness of the p-type crystalline silicon substrate 2 is 300 μm, the n-type emission layer 3 is a GaN thin film with a thickness of 200 nm, and the transparent conductive layer 4 is an ITO thin film with a thickness of 400 nm. The electrode 5 is an Ag thin film with a thickness of 400 nm.

[0022] Detect and calculate the he...

Embodiment 2

[0024] Such as figure 1 As shown, the present invention provides a high conversion efficiency heterojunction device, including a p-type crystalline silicon substrate 2, the bottom surface of the p-type crystalline silicon substrate 2 is provided with a back electrode 1, and the p-type crystalline silicon substrate 2 The top surface is stacked with an n-type emission film layer 3 , a transparent conductive layer 4 and a front electrode 5 sequentially from bottom to top, and the top surface of the p-type crystalline silicon substrate 2 has a concave-convex textured structure.

[0025] The back electrode 1 is an Al thin film with a thickness of 1.0 μm, the thickness of the p-type crystalline silicon substrate 2 is 400 μm, the n-type emission layer 3 is a GaN thin film with a thickness of 150 nm, and the transparent conductive layer 4 is a GZO thin film with a thickness of 500 nm. The electrode 5 is an Ag thin film with a thickness of 500 nm.

[0026] Detect and calculate the het...

Embodiment 3

[0028] Such as figure 1 As shown, the present invention provides a high conversion efficiency heterojunction device, including a p-type crystalline silicon substrate 2, the bottom surface of the p-type crystalline silicon substrate 2 is provided with a back electrode 1, and the p-type crystalline silicon substrate 2 The top surface is stacked with an n-type emission film layer 3 , a transparent conductive layer 4 and a front electrode 5 sequentially from bottom to top, and the top surface of the p-type crystalline silicon substrate 2 has a concave-convex textured structure.

[0029] The back electrode 1 is an Al thin film with a thickness of 1.2 μm, the thickness of the p-type crystalline silicon substrate 2 is 500 μm, the n-type emission layer 3 is an AlGaAs thin film with a thickness of 100 nm, and the transparent conductive layer 4 is a GZO thin film with a thickness of 600 nm. The electrode 5 is an Ag thin film with a thickness of 400 nm.

[0030] Detect and calculate the...

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Abstract

The present invention discloses a heterojunction device with high conversion efficiency. The device comprises a p-type crystalline silicon substrate, a back electrode is arranged on the bottom surfaceof the p-type crystalline silicon substrate, an n-type emission film layer, a transparent conductive layer and a front electrode are sequentially stacked on the top surface of the p-type crystallinesilicon substrate from bottom to top, and the top surface of the p-type crystalline silicon substrate is of a concave-convex suede structure. The heterojunction device has the advantages of being goodin lattice matching and low in interface state density, the conversion efficiency is high, and the overall performance of the heterojunction photovoltaic device is enhanced.

Description

technical field [0001] The invention relates to the technical field of photovoltaic devices, in particular to a heterojunction device with high conversion efficiency. Background technique [0002] Heterojunction, the interface region formed by the contact of two different semiconductors. Usually, the conditions for forming a heterojunction are: two semiconductors have similar crystal structure, similar atomic spacing and thermal expansion coefficient. The heterojunction often has excellent photoelectric characteristics that cannot be achieved by the PN junctions of the two semiconductors, making it suitable for making ultra-high-speed switching devices, solar cells, and semiconductor lasers. [0003] Transparent oxide semiconductors (TOS) with tunable electrical conductivity and high optical transparency hold great promise in various optoelectronic applications, such as flat panel displays, transparent field-effect transistors, ultraviolet (UV) light-emitting diodes, lasers...

Claims

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Application Information

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IPC IPC(8): H01L31/0236H01L31/02H01L31/0216H01L31/0224H01L31/0304H01L31/0352H01L31/074
CPCH01L31/02008H01L31/02168H01L31/022425H01L31/02363H01L31/03044H01L31/03048H01L31/035272H01L31/074Y02E10/544
Inventor 马立云姚婷婷李刚沈洪雪彭赛奥金克武王天齐杨扬王东汤永康甘治平时君黄海青程国送
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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