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CMOS image sensor structure and manufacturing method thereof

An image sensor and device technology, applied in electric solid state devices, semiconductor devices, radiation control devices, etc., can solve problems such as inability to fabricate pixel unit structures of CMOS image sensors

Pending Publication Date: 2020-04-14
上海微阱电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the thickness of the silicon substrate 12 for devices is too thin, the pixel unit structure of the CMOS image sensor cannot be fabricated therein

Method used

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  • CMOS image sensor structure and manufacturing method thereof
  • CMOS image sensor structure and manufacturing method thereof
  • CMOS image sensor structure and manufacturing method thereof

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Embodiment Construction

[0037] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0038] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0039] In the following specific embodiments of the present invention, please refer to Figure 2-Figure 3 , figure 2 It is a schematic layout diagram of a CMOS image sensor chip, image 3 is along figure 2 A schematic diagram of a cross-sectional structure of a CMOS image sensor in a preferred embodiment of the present invention at the position ...

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Abstract

The invention discloses a CMOS image sensor structure and a manufacturing method. The CMOS image sensor structure comprises a pixel unit array arranged on an SOI substrate and a peripheral circuit located around the pixel unit array, wherein the SOI substrate sequentially comprises a silicon substrate for a device, a buried oxide layer and a silicon substrate, and the pixel unit array comprises asilicon epitaxial layer arranged in the silicon substrate for the device, the buried oxide layer and the silicon substrate, and photosensitive parts of a plurality of pixel units arranged in the silicon epitaxial layer. According to the invention, a high-performance SOI device is still used in the peripheral circuit of an image sensor, and the high-performance pixel unit structure is manufacturedat the same time.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a CMOS image sensor structure and a manufacturing method. Background technique [0002] For half a century, the semiconductor industry has been shrinking transistor size, increasing transistor density, and improving performance in accordance with Moore's Law. However, as the size of bulk silicon transistor devices with planar structure is getting closer and closer to the physical limit, Moore's law is getting closer and closer to its end; therefore, some new structures of semiconductor devices called "non-classical CMOS" have been proposed . These technologies include FinFET, carbon nanotubes, silicon on insulator (silicon on insulator, SOI), silicon germanium on insulator (SiGe on insulator, SiGeOI) and germanium on insulator (Ge on insulator, GeOI), etc. [0003] Through these new structures, the performance of semiconductor devices can be further improved. ...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14605H01L27/14643H01L27/14689
Inventor 顾学强
Owner 上海微阱电子科技有限公司
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