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Preparation method of epitaxial wafer for improving brightness of flip chip

A flip-chip and epitaxial wafer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of ineffectiveness and reduced light extraction efficiency, and achieve the effect of improving light extraction efficiency, improving crystal quality, and improving brightness

Inactive Publication Date: 2020-04-17
FUJIAN PRIMA OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current flip chip is also grown on a normal convex PSS substrate, and the protruding part is above the flat chip. This growth method can increase the light extraction efficiency on the front chip, but it will decrease on the flip chip. Light extraction efficiency, therefore, the PSS substrate does not play the same effect as on the front-mounted chip

Method used

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  • Preparation method of epitaxial wafer for improving brightness of flip chip
  • Preparation method of epitaxial wafer for improving brightness of flip chip
  • Preparation method of epitaxial wafer for improving brightness of flip chip

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preparation example Construction

[0017] Please refer to Figure 1 to Figure 5 , a method for preparing an epitaxial wafer for improving the brightness of a flip-chip, comprising the steps of:

[0018] S1, sputtering a layer of ALN buffer layer on the concave PSS substrate;

[0019] S2 , growing a GaN filling layer on the ALN buffer layer using a high and low pressure environment, so as to fill up the concave PSS substrate.

[0020] As can be seen from the above description, the beneficial effects of the present invention are: since the PSS substrate adopts a sapphire substrate, the composition of the sapphire substrate is Al 2 o 3 , therefore, the GaN fill layer and the Al 2 o 3 A layer of ALN buffer layer is first grown between the sapphire substrates, and the ALN buffer layer acts as a link between the preceding and the following to improve the quality of crystal growth, so that the crystal surface and crystal quality rapidly grown on the concave PSS substrate are both good. It can reach the same level...

Embodiment 1

[0048] Please refer to Figure 1 to Figure 5 , Embodiment 1 of the present invention is:

[0049]A method for preparing an epitaxial wafer for improving the brightness of a flip-chip, comprising the steps of:

[0050] S1, sputtering a layer of ALN buffer layer 2 on the concave PSS substrate 1;

[0051] S2 , growing a GaN leveling layer 3 on the ALN buffer layer 2 using a high and low pressure environment to fill up the concave PSS substrate 1 , and using the ALN buffer layer 2 to enable rapid growth of the GaN leveling layer 3 .

[0052] S3, continue to grow the N-type GaN layer 4 on the flat GaN filling layer 3;

[0053] S4. Continue growing the InGaN / GaN quantum well layer 5, the electron blocking layer 6 and the P-type GaN layer 7 on the N-type GaN layer 4;

[0054] S5. Finally, a contact layer 8 is grown on the P-type GaN layer 7 to obtain a flip-chip epitaxial wafer.

[0055] In this embodiment, the ALN buffer layer 2 plays a connecting role, so that the surface and c...

Embodiment 2

[0057] Please refer to Figure 1 to Figure 5 , the second embodiment of the present invention is:

[0058] A method for preparing epitaxial wafers for improving the brightness of flip-chips. On the basis of the first embodiment above, step S1 is specifically:

[0059] S1, carry out the ALN sputtering buffer layer process on the concave PSS substrate 1, to generate a 30nm thick ALN buffer layer 2, the sputtering pressure of the ALN sputtering buffer layer process is 50torr, and the sputtering temperature is 500 °, The power is set to 3KV, and the input includes 15% Ar, 5% O 2 and 80% of N 2 The mixed gas, where, N 2 Participate in the generation of ALN buffer layer 2, Ar and O 2 It plays a catalytic role to accelerate the formation of the ALN buffer layer 2, and the formation rate of the ALN buffer layer 2 under this condition can reach 20um / h.

[0060] In this embodiment, step S2 is specifically:

[0061] S21. First perform a low-pressure lateral growth process on the AL...

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Abstract

The invention discloses a preparation method of an epitaxial wafer for improving the brightness of a flip chip. The method comprises the steps: carrying out the sputtering of an ALN buffer layer on aconcave PSS substrate, and growing a GaN filling layer on the ALN buffer layer through a high-low pressure environment so as to fill the concave PSS substrate. According to the method, the ALN bufferlayer grows between the GaN filling layer and an Al2O3 sapphire substrate, the ALN buffer layer plays a role of connecting an upper part and a lower part to improve the growth rate of a crystal, therefore, the surface and the quality of the crystal rapidly grown on the concave PSS substrate can reach the same level as those of a crystal grown on a convex PSS substrate; on the basis, due to growthin the concave PSS substrate, light is emitted from the concave PSS substrate during light emission, and secondary light emission is easy to form through continuous refraction, so that the light emission efficiency can be effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor electronics, in particular to an epitaxial wafer preparation method for improving the brightness of a flip chip. Background technique [0002] At present, a large number of production practices have proved that the sapphire substrate has developed from a planar substrate to a patterned substrate (PSS), and the forward luminous efficiency of LEDs has been significantly improved, which has greatly promoted the development of the entire LED industry. Growing GaN material on PSS, on the one hand, can effectively reduce the dislocation density of GaN epitaxial material, thereby reducing the non-radiative recombination of the active region, reducing the reverse leakage current, and improving the life of the LED; on the other hand, the active region The emitted light is scattered by the GaN and sapphire substrate interface multiple times, changing the exit angle of the total reflection light, incre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/12H01L33/20
CPCH01L33/007H01L33/12H01L33/20
Inventor 刘恒山
Owner FUJIAN PRIMA OPTOELECTRONICS CO LTD
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