Vertical cavity surface emitting semiconductor laser capable of realizing asymmetric trapping of particles
A vertical cavity surface emission, asymmetric technology, which is applied in the direction of semiconductor lasers, lasers, phonon exciters, etc., can solve the problems of complex device structure, uneven light intensity, and high original light quality requirements, and achieve simple device structure and fabrication The effect of simple process
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[0016] The structural composition of the vertical cavity surface emitting semiconductor laser capable of realizing asymmetric confinement of particles in the present invention is an upper electrode 1, an ohmic contact layer 2, an upper distributed Bragg reflector 3, an oxide confinement layer 4, an active Gain region 5, lower distributed Bragg reflector 6, substrate 7, lower electrode 8, such as image 3 , Figure 4 shown. The material of the upper electrode 1 is Ti / Pt / Au, which is layered and then alloyed; the material of the ohmic contact layer 2 is GaAs; the material of the upper distributed Bragg reflector 3 is P-type Al 0.1 Ga 0.9 As / Al 0.8 Ga 0.2 As; the material of the oxide confinement layer 4 is Al 2 o 3 The material of the active gain region 5 is GaAs / AlGaAs; the material of the lower distributed Bragg reflector 6 is N-type Al 0.1 Ga 0.9 As / Al 0.8 Ga 0.2As; the material of the substrate 7 is GaAs; the material of the lower electrode 8 is Au / Ge / Ni, first lay...
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