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Vertical cavity surface emitting semiconductor laser capable of realizing asymmetric trapping of particles

A vertical cavity surface emission, asymmetric technology, which is applied in the direction of semiconductor lasers, lasers, phonon exciters, etc., can solve the problems of complex device structure, uneven light intensity, and high original light quality requirements, and achieve simple device structure and fabrication The effect of simple process

Active Publication Date: 2020-04-17
CHANGCHUN UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of the method of obtaining outside the light source is that the device for generating non-circular and hollow light has a loose structure on the whole, cumbersome debugging, high requirements for the quality of the original light, and the obtained non-circular and hollow light is unstable and uneven in intensity.
For example, a Chinese invention patent application with application number 201510396482.1 discloses "an elliptical annular window semiconductor laser". Complex process

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  • Vertical cavity surface emitting semiconductor laser capable of realizing asymmetric trapping of particles
  • Vertical cavity surface emitting semiconductor laser capable of realizing asymmetric trapping of particles
  • Vertical cavity surface emitting semiconductor laser capable of realizing asymmetric trapping of particles

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Embodiment Construction

[0016] The structural composition of the vertical cavity surface emitting semiconductor laser capable of realizing asymmetric confinement of particles in the present invention is an upper electrode 1, an ohmic contact layer 2, an upper distributed Bragg reflector 3, an oxide confinement layer 4, an active Gain region 5, lower distributed Bragg reflector 6, substrate 7, lower electrode 8, such as image 3 , Figure 4 shown. The material of the upper electrode 1 is Ti / Pt / Au, which is layered and then alloyed; the material of the ohmic contact layer 2 is GaAs; the material of the upper distributed Bragg reflector 3 is P-type Al 0.1 Ga 0.9 As / Al 0.8 Ga 0.2 As; the material of the oxide confinement layer 4 is Al 2 o 3 The material of the active gain region 5 is GaAs / AlGaAs; the material of the lower distributed Bragg reflector 6 is N-type Al 0.1 Ga 0.9 As / Al 0.8 Ga 0.2As; the material of the substrate 7 is GaAs; the material of the lower electrode 8 is Au / Ge / Ni, first lay...

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Abstract

The invention discloses a vertical cavity surface emitting semiconductor laser capable of realizing the asymmetric trapping of particles and belongs to the technical field of semiconductor lasers. Anexisting vertical cavity surface emitting semiconductor laser capable of emitting non-circular hollow light is complex in structure. A flush-top high-resistance region formed in an ion implantation mode is arranged in the center of a cylindrical entity formed by an ohmic contact layer, an upper distributed Bragg reflector and an active gain region; the flush-top high-resistance region is approximately cylindrical, a top surface of the flush-top high-resistance region is level with a top surface of the ohmic contact layer, and a bottom surface of the flush-top high-resistance region is in contact with an inner lens surface of a lower distributed Bragg reflector; a shielding forming layer is located on the top face of the flush top high-resistance area, the dimension of the shielding forminglayer is between the top face capable of covering the flush top high-resistance area and a space capable of enabling an inner hole of an upper electrode to be reserved, the shape of the shielding forming layer is a non-circular geometric figure, and the thickness and the material of the shielding forming layer are the same as those of the upper electrode. The laser has a simple structure and a simple manufacturing process.

Description

technical field [0001] The invention relates to a vertical cavity surface-emitting semiconductor laser capable of realizing asymmetric confinement of particles, which can emit non-circular hollow light and is used for asymmetric confinement of particles, belonging to the technical field of semiconductor lasers. Background technique [0002] Hollow Laser Beam (HLB) is a ring-shaped beam with zero central light intensity in the direction of propagation, also known as hollow light or dark hollow light (Takahiro Kuga, Yoshio Torii, Noritsugu Shiokawa, et al.Novel Optical Trap of Ato6ms with a Donut Beam [J]. Phys Rev Lett, 1997, 78: 4713-4716). One of the applications of hollow light is as optical tweezers (optical tweezers) for trapping microscopic particles, that is, optical trapping of particles. Optical trapping is a kind of non-contact particle manipulation, which has the advantages of continuous operation, no pollution, and less impact on particles. The main criterion to...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183
CPCH01S5/18347H01S5/18361
Inventor 晏长岭杨静航逄超冯源郝永芹张剑家
Owner CHANGCHUN UNIV OF SCI & TECH
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