Simulation method for strain regulation and control of selenium disulfide semiconductor device

A technology of selenium disulfide and simulation method, which is applied in the fields of instruments, special data processing applications, electrical digital data processing, etc.

Pending Publication Date: 2020-04-21
NANTONG UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the uncertainty of the experiment and the limitation of the experimental conditions, it is a complicated and difficult process to subjectively adjust the strain to control the physical properties of the selenium disulfide semiconductor device.

Method used

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  • Simulation method for strain regulation and control of selenium disulfide semiconductor device
  • Simulation method for strain regulation and control of selenium disulfide semiconductor device
  • Simulation method for strain regulation and control of selenium disulfide semiconductor device

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with the accompanying drawings.

[0019] Such as figure 1 Shown is a schematic flow chart of the simulation method for strain-regulated selenium disulfide semiconductor devices, including the following steps: use Materials Studio software to construct a single-layer selenium disulfide model → optimize the unstrained single-layer selenium sulfide-free to obtain the ground state structure → change the strained Size and range, perform non-self-consistent calculations → calculate the density of states, calculate energy bands → calculate other characteristics of related devices.

[0020] Using Materials Studio software to build a single-layer selenium disulfide model, including the following steps: selenium disulfide has three atomic planes, the Sn atomic plane in the middle separates the S atoms of the two hexagonal side planes, and the adjacent layers are separated by van der Waals force Combine with lay...

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Abstract

The invention discloses a simulation method for strain regulation and control of a selenium disulfide semiconductor device. The method comprises the following steps: constructing a single-layer selenium disulfide model by adopting Matrials Studio software, optimizing strain-free single-layer selenium sulfide to obtain a ground state structure, changing the magnitude and range of strain, carrying out non-self-consistent calculation, calculating state density, calculating an energy band, and calculating other characteristics of related devices. According to the method, by combining the density functional theory, the plane wave and pseudopotential theory, the maximization local Wannier function and the tight binding approximation theory, guidance and theoretical basis are provided for experimental research, and blindness in the experimental process is reduced.

Description

technical field [0001] The invention relates to a simulation method of a semiconductor device, in particular to a simulation method of a strain-regulated selenium disulfide semiconductor device. Background technique [0002] A two-dimensional material refers to a single substance or compound crystal composed of one or more elements, and its thickness is only one or a few layers of atoms. In a broad sense, it can also refer to materials with several monolayers bonded by van der Waals weak interactions, or materials in which electrons are restricted to move in two-dimensional directions. Due to the unique low-dimensional characteristic structure of two-dimensional materials, most of them have excellent physical properties such as mechanics, heat, electricity, magnetism and optics. Many materials have great potential to promote the innovation of the future computer and communication industries. Some materials It has been used in applications such as photovoltaics, semiconducto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/398G16C60/00
CPCG16C60/00
Inventor 渠莉华仲崇贵
Owner NANTONG UNIVERSITY
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