Manufacturing method of silicon-based photoelectric detector
A technology for photodetectors and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as large dark current of germanium detectors, achieve less dislocation defects, reduce dark current, damage small effect
Active Publication Date: 2020-04-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
[0004] What the present invention is to solve is the problem that the dark current of the germanium detector manufactured by the existing technology is large
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Embodiment
[0036] This embodiment provides a method for manufacturing a silicon-based photodetector, the method for manufacturing a silicon-based photodetector includes the following steps:
[0037] forming a first dielectric layer on the upper surface of the SOI substrate;
[0038] Etching the first dielectric layer by using a dry etching process to form a first groove, the depth of the first groove is smaller than the thickness of the first dielectric layer;
[0039] A wet etching process is used to etch the bottom of the first groove to form a second groove, the sum of the depth of the second groove and the depth of the first groove is equal to the first medium layer thickness;
[0040] forming a sacrificial layer at the bottom of the second groove;
[0041] removing the sacrificial layer to expose the SOI substrate;
[0042] growing a detection layer on the SOI substrate;
[0043] performing surface planarization treatment on the detection layer, so that the upper surface of the ...
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Abstract
The invention discloses a manufacturing method of a silicon-based photoelectric detector. The manufacturing method comprises the following steps: forming a first dielectric layer on the upper surfaceof an SOI substrate; etching the first dielectric layer by adopting a dry etching process to form a first groove, the depth of the first groove being less than the thickness of the first dielectric layer; etching the bottom of the first groove by adopting a wet etching process to form a second groove, the sum of the depth of the second groove and the depth of the first groove being equal to the thickness of the first dielectric layer; forming a sacrificial layer at the bottom of the second groove; removing the sacrificial layer, and exposing the SOI substrate; growing a detection layer on theSOI substrate; and performing surface planarization processing on the detection layer to enable the upper surface of the detection layer and the upper surface of the first dielectric layer to be located in the same plane. According to the manufacturing method of the silicon-based photoelectric detector, the purpose of reducing dark current of the silicon-based photoelectric detector can be achieved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a silicon-based photodetector. Background technique [0002] Today, as the information industry, biomedicine and other scientific and technological fields are getting more and more attention, new optoelectronics and optical communication technologies are bound to develop at a faster speed. Silicon-based optoelectronic integration adopts mature and inexpensive microelectronic processing technology to integrate optical devices with various functional microelectronic circuits, which is an effective way to realize the popularization and development of optical communication and optical interconnection. Silicon-based photodetectors are one of the key components of silicon-based optical communication systems. With the breakthrough of silicon-based germanium material epitaxy in recent years, germanium detectors have taken into account the integration of ...
Claims
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IPC IPC(8): H01L31/18H01L31/0392H01L31/105
CPCH01L31/03921H01L31/105H01L31/1804Y02P70/50
Inventor 张鹏唐波李志华李彬刘若男
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI