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CH4-SCR denitration catalyst and preparation method thereof and waste gas denitration method

A CH4-SCR, denitrification catalyst technology, applied in the field of catalysts, can solve the problems of poor sulfur resistance and water resistance, deactivation, etc., to achieve the effect of improving sulfur resistance and water resistance, and increasing the denitrification rate

Active Publication Date: 2020-05-05
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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Problems solved by technology

Among them, H-Beta molecular sieve-supported indium catalyst (i.e. In / H-Beta catalyst) has attracted much attention due to its high denitrification efficiency, but In / H-Beta has poor sulfur and water resistance, and is severely deactivated under sulfur-containing and water-containing conditions. ; In practical applications, flue gas often contains a certain concentration of water and sulfur dioxide, therefore, improving the anti-sulfur and water resistance of the In / H-Beta catalyst is the key to applying the catalyst to practice

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  • CH4-SCR denitration catalyst and preparation method thereof and waste gas denitration method
  • CH4-SCR denitration catalyst and preparation method thereof and waste gas denitration method
  • CH4-SCR denitration catalyst and preparation method thereof and waste gas denitration method

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Embodiment Construction

[0032] The conception and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments, so as to fully understand the purpose, features and effects of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative efforts belong to The protection scope of the present invention.

[0033] (1) CH 4 - Preparation of SCR denitration catalyst

[0034] Configure 100mL of indium-containing ion exchange liquid (indium nitrate) with an indium ion concentration of 0.033mol / L, and then add 4g of H-Beta molecular sieve carrier (SiO 2 / Al 2 o 3 =25) and 1g of metal oxide, mixed evenly, then placed on a magnetic stirrer, magnetically stirred in a constant temperature water bath at a temperature of 85°C for 8h; then the sti...

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Abstract

The invention discloses a CH4-SCR denitration catalyst and a preparation method thereof and a waste gas denitration method. The CH4-SCR denitration catalyst is prepared from the following components:an H-Beta molecular sieve carrier, indium and a metal oxide, the indium is loaded on the H-Beta molecular sieve carrier, and the metal oxide is selected from the combination of Co3O4 and at least oneof Ga2O3, Fe2O3, NiO and CeO2. Due to the addition of the metal oxide formed by combining at least one of Ga2O3, Fe2O3, NiO and CeO2 with Co3O4, the sulfur resistance and water resistance of the catalyst are remarkably improved, and the denitration rate of the catalyst can be increased.

Description

technical field [0001] The invention relates to the technical field of catalysts, in particular to a CH 4 -SCR denitrification catalyst and its preparation method and exhaust gas denitrification method. Background technique [0002] Nitrogen oxides are one of the main pollutants in the atmosphere. Nitrogen oxides will not only cause damage to the human respiratory organs, but also cause serious environmental problems such as optical smog, acid rain, and ozone holes. It mainly comes from the combustion of fossil fuels. Manufacturing, power production and transportation are the main sources of nitrogen oxide emissions. In order to achieve the expected nitrogen oxide emission reduction goals and optimize air quality, in addition to strictly controlling emissions, develop practical Efficient nitrogen removal technology is very important. [0003] Take NH 3 The Selective Catalytic Reduction (SCR) method as a reducing agent is currently a mature, widely used, and highly efficie...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J29/70B01J29/78B01J29/76B01D53/86B01D53/56
CPCB01J29/7057B01J29/7815B01J29/7615B01D53/8628B01J2229/18B01D2251/208Y02C20/20
Inventor 朱荣淑丁然朱满玉
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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