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Printing screen for heterojunction solar cell and printing method thereof

A technology of solar cells and printing methods, applied in printing, printing presses, rotary printing presses, etc., can solve the problems of non-conduction of main and auxiliary grids, battery fragment grids, affecting photo-generated current collection, etc., to increase battery efficiency and increase photo-generated current. The effect of current collection

Inactive Publication Date: 2020-05-05
晋能光伏技术有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the film thickness of the main grid increases and the thickness of the actual printed main grid increases, the step-by-step auxiliary grid is more likely to be disconnected at the connection with the main grid, resulting in the failure of the main grid and the auxiliary grid, and serious battery fragmentation.
This will affect the collection of photo-generated current, affect the efficiency of the battery, and affect the life of the component

Method used

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  • Printing screen for heterojunction solar cell and printing method thereof
  • Printing screen for heterojunction solar cell and printing method thereof
  • Printing screen for heterojunction solar cell and printing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] A printing screen for heterojunction solar cells and a printing method thereof, specifically comprising the following steps:

[0038] (1) Perform texturing treatment on N-type monocrystalline silicon wafers with a thickness of 170 μm to form a pyramid textured surface, remove impurity ions and clean the surface;

[0039] (2) Prepare the double intrinsic amorphous silicon layer and the doped amorphous silicon layer on the front and back by plasma chemical vapor deposition. The thickness of amorphous silicon is 20nm;

[0040] (3) Deposit the ITO film by magnetron sputtering, the thickness of the ITO film on the front and back is 100nm, and the silicon chip is supported on the carrier to form a mask design, and the mask width is 1.5mm.

[0041] (4) The back silver metal electrode is formed by step-by-step screen printing, the width of the main grid is 1 mm, the number of the main grid is 5, the line width of the auxiliary grid is 30 μm, and the number of auxiliary grids i...

Embodiment 2

[0045] A printing screen for heterojunction solar cells and a printing method thereof, specifically comprising the following steps:

[0046] (1) Perform texturing treatment on N-type monocrystalline silicon wafers with a thickness of 170 μm to form a pyramid textured surface, remove impurity ions and clean the surface;

[0047](2) Prepare the double intrinsic amorphous silicon layer and the doped amorphous silicon layer on the front and back by plasma chemical vapor deposition. The thickness of amorphous silicon is 20nm;

[0048] (3) Deposit the ITO film by magnetron sputtering, the thickness of the ITO film on the front and back is 100nm, and the silicon chip is supported on the carrier to form a mask design, and the mask width is 1.5mm.

[0049] (4) The back silver metal electrode is formed by step-by-step screen printing, the width of the main grid is 1 mm, the number of the main grid is 5, the line width of the auxiliary grid is 30 μm, and the number of auxiliary grids is...

Embodiment 3

[0053] A printing screen for heterojunction solar cells and a printing method thereof, specifically comprising the following steps:

[0054] (1) Perform texturing treatment on N-type monocrystalline silicon wafers with a thickness of 170 μm to form a pyramid textured surface, remove impurity ions and clean the surface;

[0055] (2) Prepare the double intrinsic amorphous silicon layer and the doped amorphous silicon layer on the front and back by plasma chemical vapor deposition. The thickness of amorphous silicon is 20nm;

[0056] (3) Deposit the ITO film by magnetron sputtering, the thickness of the ITO film on the front and back is 100nm, and the silicon chip is supported on the carrier to form a mask design, and the mask width is 1.5mm.

[0057] (4) The back silver metal electrode is formed by step-by-step screen printing, the width of the main grid is 1 mm, the number of the main grid is 5, the line width of the auxiliary grid is 30 μm, and the number of auxiliary grids i...

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Abstract

The invention discloses a printing screen for a heterojunction solar cell and a printing method thereof. The printing screen comprises a main grid screen and an auxiliary grid screen, the main grid screen is provided with main grids, the main grids are provided with first positioning points and grippers, the auxiliary grid screen is provided with fine grid lines and second positioning points, andthe main grid screen and the auxiliary grid screen can achieve overprinting through the positioning points. When printing is conducted, a metal electrode on the front face of the cell adopts a mode ofprinting the main grid screen and the auxiliary grid screen step by step, then overprinting is conducted on the main grid screen and the auxiliary grid screen, and printing can be completed. According to the printing screen for the heterojunction solar cell and the printing method thereof, a step-by-step printing main fine grid lap-joint printing method is adopted, the grid breaking problem in the printing process can be prevented, and the cell efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, and more specifically relates to a printing screen for heterojunction solar cells and a printing method thereof. Background technique [0002] Solar cells, also known as "solar chips" or "photovoltaic cells", are photoelectric semiconductor sheets that use sunlight to generate electricity directly. As long as it is illuminated by light that meets certain illumination conditions, it can output voltage instantly and generate current when there is a loop. In physics, it is called solar photovoltaic (Photovoltaic, abbreviated as PV), or photovoltaic for short. [0003] With the development of solar cell technology, more and more attention has been paid to the development of high-efficiency cells. Among them, the silicon-based heterojunction solar cell (HJT cell) passivated by the intrinsic layer of amorphous silicon (a-Si:H(i)) is one of the key research directions. As we all know...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B41F15/36B41M1/12B41M5/00B41M7/00H01L31/05H01L31/18
CPCB41F15/36B41M1/12B41M5/0011B41M7/009H01L31/0504H01L31/18Y02E10/50Y02P70/50
Inventor 任法渊崔宁黄金王继磊高勇张娟白焱辉杨骥贾慧君
Owner 晋能光伏技术有限责任公司
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